VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 1Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
VEMT2503X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
FEATURES
Package type: surface mount
Package form: GW, RGW
Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
AEC-Q101 qualified
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity: = ± 35°
Package matched with IR emitter series
VSMB2943RGX01 and VSMB2943GX01
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Detector in automotive applications
Photo interrupters
Miniature switches
Counters
•Encoders
Position sensors
Note
Test condition see table “Basic Characteristics
Note
MOQ: minimum order quantity
VEMT2503X01 VEMT2523X01
PRODUCT SUMMARY
COMPONENT Ica (mA) (deg) 0.1 (nm)
VEMT2503X01 2.7 ± 35 470 to 1090
VEMT2523X01 2.7 ± 35 470 to 1090
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMT2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 2Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 20 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Power power dissipation Tamb 75 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient Acc. J-STD-051 RthJA 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21619
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 0.1 mA VCEO 20 V
Collector dark current VCE = 5 V, E = 0 ICEO 1 100 nA
Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 pF
Collector light current Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V Ica 1.3 2.7 4.1 mA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity p850 nm
Range of spectral bandwidth 0.1 470 to 1090 nm
Collector emitter saturation voltage IC = 0.05 mA VCEsat 0.4 V
Temperature coefficient of Ica Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V TkIca 1.1 %/K
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 3Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
1
10
100
1000
10 000
0 102030405060708090100
Tamb - Ambient Temperature (°C)
ICE0 - Collector Dark Current (nA)
IF = 0
VCE = 70 V
VCE = 25 V
VCE = 5 V
20594
Ica - Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
0.1
1
10
100
0.01 0.1 1 10
VCE = 5 V,
λ = 950 nm
0
10
20
30
40
50
60
70
80
90
100
0 250 500 750 1000 1250 1500 1750 2000
IC - Collector Current (µA)
tr/tf - Rise/Fall Time (µs)
tf
tr
20599
RL = 100 Ω
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21555 λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
Srel - Relative Radiant Sensitivity
ϕ - Angular Displacement
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
VCE = 5 V
Ee = 1 mW/cm2
= 950 nm
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 4Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS VEMT2503X01 in millimeters
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 5Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS VEMT2523X01 in millimeters
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 6Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS VEMT2503X01 in millimeters
VEMT2503X01, VEMT2523X01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 08-Apr-13 7Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS VEMT2523X01 in millimeters
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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