2N7002E Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-236 (SOT-23) Marking Code: 7Ewl G 1 S 2 3 E = Part Number Code for 2N7002E w = Week Code l = Lot Traceability D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TA = 25_C TA = 70_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA = 70_C V 240 ID IDM TA = 25_C Unit 190 mA 1300 0.35 PD 0.22 W RthJA 357 _C/W TJ, Tstg -55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70860 S-04279--Rev. C, 16-Jul-01 www.vishay.com 11-1 2N7002E Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 mA 60 68 VGS(th) VDS = VGS, ID = 250 mA 1 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "15 V "10 VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TC = 125_C 500 On-State Drain Currentb ID(on) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage VGS = 10 V, VDS = 7.5 V 800 1300 VGS = 4.5 V, VDS = 10 V 500 700 2.5 nA m mA mA VGS = 10 V, ID = 250 mA 1.2 3 VGS = 4.5 V, ID = 200 mA 1.8 4 gfs VDS = 15 V, ID = 200 mA 600 VSD IS = 200 mA, VGS = 0 V 0.85 1.2 0.4 0.6 VDS = 10 V, VGS = 4.5 V ID ^ 250 mA 0.06 rDS(on) V W mS V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nC 0.06 21 VDS = 25 V, VGS = 0 V, f = 1 MHz 7 pF 2.5 Switchinga, c Turn-On Time ton Turn-Off Time toff VDD = 10 V, RL = 40 W ID ^ 250 mA, VGEN = 10V RG = 10 W 13 20 18 25 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70860 S-04279--Rev. C, 16-Jul-01 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.2 1.0 VGS = 10, 9, 8, 7, 6 V TJ = -55_C 5V 0.9 0.6 ID - Drain Current (A) ID - Drain Current (A) 0.8 4V 0.4 25_C 125_C 0.6 0.3 0.2 3V 0.0 0.0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current 4 3.5 rDS(on) - On-Resistance ( ) rDS(on) - On-Resistance ( ) 3.0 3 ID @ 250 mA 2 ID @ 75 mA 1 2.5 VGS = 4.5 V 2.0 VGS = 10 V 1.5 1.0 0.5 0 0 2 4 6 8 0.0 0.0 10 0.2 0.4 On-Resistance vs. Junction Temperature 1.0 Threshold Voltage Variance Over Temperature 0.4 2.0 VGS = 10 V @ 250 mA 0.2 1.6 ID = 250 mA 1.2 VGS(th) - Variance (V) rDS(on) - On-Resistance ( ) (Normalized) 0.8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) VGS = 4.5 V @ 200 mA 0.8 0.4 0.0 -50 0.6 -0.0 -0.2 -0.4 -0.6 -25 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 70860 S-04279--Rev. C, 16-Jul-01 125 150 -0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 11-3 2N7002E Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 40 Gate Charge 1.0 VDS = 30 V ID = 0.25 A Ciss C - Capacitance (pF) 0.8 VGS - Gate-to-Source Voltage (V) 32 24 16 Coss 8 0.6 0.4 0.2 Crss 0 0 5 10 15 20 0.0 0.0 25 0.1 VDS - Drain-to-Source Voltage (V) 0.2 0.3 0.4 0.5 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 2 IS - Source Current (A) 1 TJ = 85_C 25_C -55_C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) www.vishay.com 11-4 Document Number: 70860 S-04279--Rev. C, 16-Jul-01