2N7002E
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70860
S-04279—Rev. C, 16-Jul-01
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA60 68
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA1 2 2.5 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "15 V "10 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TC = 125_C500 mA
VGS = 10 V, VDS = 7.5 V 800 1300
On-State Drain CurrentbID(on) VGS = 4.5 V, VDS = 10 V 500 700 mA
VGS = 10 V, ID = 250 mA 1.2 3
Drain-Source On-ResistancebrDS(on) VGS = 4.5 V, ID = 200 mA 1.8 4 W
Forward T ransconductancebgfs VDS = 15 V, ID = 200 mA 600 mS
Diode Forward Voltage VSD IS = 200 mA, VGS = 0 V 0.85 1.2 V
Dynamica
Total Gate Charge Qg0.4 0.6
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V
I
^ 250 mA 0.06 nC
Gate-Drain Charge Qgd
ID
250 mA 0.06
Input Capacitance Ciss 21
Output Capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 7pF
Reverse Transfer Capacitance Crss 2.5
Switchinga, c
T urn-On Time ton VDD = 10 V, RL = 40 W
13 20
Turn-Off Time toff ID ^ 250 mA, VGEN = 10V
RG = 10 W18 25 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.