2SK225,2SK226,2SK227- YUNY NF RAIVLYANY AXY MOS FET SILICON N-CHANNEL ENHANCEMENT MOS FET i AI BH HS A LOW FREQUENCY POWER AMPLIFIER 2SJ81, 25J82, 2SU83E NY PU AYLAUNP . Complementary pair with. 2SJ81, 2SJ82 and 2S8J83 .8max. 24.440.2 3 1.8max. @4.140.15 | TPC Bry.) yy] 2 1. * F2Gate 1 2, %7 2%: Source 2.6 0.7 max. (734) (Flange) 2.7 max, SS} (0.5tye) 3. KF U4! Drain (Dimensions in mm) 1.2max, 1.0max. iy 2 3U 3.6max. 2 baa 5.45 +0 Tookos t(3.2typ.) (HPAK) Bi@xtmAZH ABSOLUTE MAXIMUM RATINGS (Ta=25 } ARF + RIVBKOT-ABBISU SRI MAXIMUM CHANNEL DISSIPATION JA A Symbol | 2SK225 | 2SK226 |2SK227| Unit ' CURVE Fuqayv: Y- ABE Vosx | 120 140 160 Vv 150 Ph se YK RB Vess +15 +15 #15 Vv Fo ovof & fel Ib 7 7 7 A # AF ~ A NM FA cA* 100} . 100 100 WwW 100 rE iB fe Tots 45~ 45~ 45~ a as e 4 * +150) +150) +150] MS #7Tc=25C I BU SAA A *Value at Te=25C 30 NN N BHT + ROBE Per ( N ~N 0 50 . 100 150 RWI Te (C) Mesa ELECTRICAL CHARACTERISTICS (Ta=25C ) _ 2SK22 _ Jk B Symbol Test Condition - SK225 - 2SK226 - 2SK227 Unit . min | typ | max; min} typ-; max} min! typ | max BUA y+ Y ZAR ARIE | Verrsosx | Io=10mA, Ves=10V. 120] | ) 140] {} } too} ~]} | v eyo bh Ym RARER RE | Viaevess | Pom 100uA, Vos=0 +15) |415). |, #15) _ V woh. Y Ae EE Vasco In=100mA, Vos=10V 0.15; ./}1.45] 0.15} }1.45/0.15] $1.45 Vv Pedy + Ya ARERR | Vos coats In=7A* Veo=0 _ _ 12 _ 12 _ _ 12 V I Ge Pr KF FP vv Allyl Vos=10V,. In=3A* 0.74 1.0 1.4] 0.7) 1.0 1.4] 0.7; 1.0 1.4 S$ A A & Bt | Ciss . _ | 600 |! Y] 600 | | 600 | pF Ves=5V, Vos=10V, it q # B | Cos f 350} | ) 350} .} j}.350! | pF f=1MHz mo RE BR | Cree . |.10} ; ~] 10} }- ~| 10}; ] pF 9 - vy A vy RE OTD] te } 180} | -j 180]. | ] 180 ]| ns Voo=20V, Ip=4A * RB vy A 7 We TA] tose _ 60 _ 60 _ _ 60 ? ns RY IME *Pulse Test BSsetedh feld 25K133, 2SK134, 2SK135Bh8, See characteristic curves of 2SK133, 2SK134 and 2SK135. @ HITACHI 965