GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit- ching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS 3 Continuous Power Dissipation @ Ts=25C, Continuous Power Dissipation @ Tg=25C, Maximum Collector Junction Temperature, Storage Temperature Range, Tstg Pd Pd T5 PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO =LECTRONICS MECHANICAL OUTLINE ss. TO-92A EBC 0.3W 0.8W 125C ~55C to + 125C Soldering Temperature (10 sec. time limit) 260C Collector to Base Voltage, Vopo sOV Collector to Emitter Voltage, Voxo Lov \ Emitter to Base Voltage, Vigo 5V cpus eh cin mee as ae eae i i| ELECTRICAL CHARACTERISTICS @ "ae25C (unless otherwise stated) : PARAMETER SYMBOL MIN MAX | UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage BV ogo 80 Vv Ig= =100uA 1,70 CollectorEmitter Sustaining Voltage Vero ( sust y" 40 V T=30mA I T,70 Emitter-Base Breakdown Voltage BV ER 5 Vv Iy=l0uA Ig=o Collector Cutoff Current Iono 50 nA Veg=40V Iy=0 Collector Cutoff Current Topo 5 | ud |VgpehOV I_eO Tye 75C Collector-Emitter Saturation Voltage VoE(sat) 0.25 Vv Te l50ma Tyeloma '|Base-Emitter Saturation Voltage VeR( sat ) 1.1 Vv Tgel50maA T,-15mA . |. 4+ = po D.C. Current Gain | hep 100 300 Vor lV iors : . $3510 MICRO ELECTRONICS LTD. KWON TONG PO BOXGS477 CABLE ADDRESS MICROTRON" FAX: 3 watt | TELEPHONE:- 3-430181-6, 3-893963;-9-892423,3-89822F ed () * PARAMETER SYMBOL | MIN TYP MAX | UNIT | TEST CONDITIONS o f 2 * 7 = = ) D.. Current Gain Dep 100 Vox 1V i 30mA High Frequency Current Gain De, 3 Vggt lov I gr50mA f=20Me Output Capacitance Cob 18 20 | pF Vopr lOV 1,70 \ Input Capacitance \. Cib 4 80] pF Vigp7 0+ 9V I,=0 Pluse Conditions : Length=300uS, duty cycle=1% e