This is information on a product in full production.
November 2013 DocID025283 Rev 1 1/23
STB26NM60 ND, STF2 6NM6 0ND,
STP26NM60ND, STW26NM60ND
N-channel 60 0 V, 0.145 Ω typ ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•100% avalanche tested
•Low input capacitance and gate charge
•Low gate input resistance
•Extremely high dv/dt and avalanche
capabilities
Applications
•Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topolo gie s and ZVS phase -shi ft converte rs .
TO-220
D PAK
2
TO-220FP
TO-247
123
123
1
3
TAB
123
TAB
!-V
'7$%
*
6
Order codes V
DS
@
T
jmax
R
DS(on)
max I
D
STB26NM60ND
650 V 0.175 21 A
STF26NM60ND
STP26NM60ND
STW26NM60ND
Table 1. Device summary
Order codes Marking Packages Packaging
STB26NM60ND
26NM60ND
D²PAK Tape and reel
STF26NM60ND TO-220FP
TubeSTP26NM60ND TO-220
STW26NM60ND TO-247
www.st.com
Contents STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
2/23 DocID025283 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Elect rical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID025283 Rev 1 3/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical ratings
23
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D
2
PAK, TO-220,
TO-247 TO-220FP
V
DS
Drai n-so urce voltage 600 V
V
GS
Gate-source voltage ±25 V
I
D
Drai n current (continuous) at T
C
= 25 °C 21 21
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drai n current (continuous) at T
C
= 100 °C 13 13
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 84 84(1) A
P
TOT
Total dissipation at T
C
= 25 °C 190 35 W
dv/dt
(3)
3. I
SD
≤ 21 A, di/dt ≤ 400 A/µs , V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 40 V/ns
dv/dt(4)
4. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 40 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C) 2500 V
T
stg
Stor age temperature –55 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
D²PAK TO-220FP TO-220 TO-247
R
thj-case
Thermal res is t an ce jun cti on-
case max 0.66 3.57 0.66 °C/W
R
thj-amb
Thermal res is t an ce jun cti on-
ambient max 62.5 50 °C/W
R
thj-pcb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal res is t an ce jun cti on-
pcb max 30 °C/W
Electrical ratings STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
4/23 DocID025283 Rev 1
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
J
max) 4A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V) 100 mJ
DocID025283 Rev 1 5/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical characteristics
23
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified).
Table 5. On/off states
Symbol Parameter Test conditions Value Unit
Min. Typ. Max.
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0) V
DS
= 600 V
V
DS
= 600 V @T
C
= 125 °C 1
100 µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0) V
GS
= ± 25 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4 5 V
R
DS(on)
Static drain-source
on- resist anc e V
GS
= 10 V, I
D
= 10.5 A 0.145 0.175 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 1817 - pF
C
oss
Output capacitance - 90 - pF
C
rss
Reverse transfer
capacitance -4.4- pF
C
oss eq.(1)
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance VGS = 0, VDS = 0 to 480 V - 270 - pF
td(on) Turn-on delay time VDD = 300 V, ID = 10.5 A
RG=4.7 Ω VGS = 10 V
(see Figure 23),
(see Figure 18)
-22- ns
trRise time - 14.5 - ns
td(off) Turn-off delay time - 69 - ns
tfFall time - 27.5 - ns
QgTotal gate charge VDD = 480 V, ID = 21 A,
VGS = 10 V,
(see Figure 19)
-54.6- nC
Qgs Gate-s ource cha r ge - 9.1 - nC
Qgd Gate-drain charge - 32.5 - nC
RgIntr insic gate resistance f = 1 MHz, ID = 0 - 2.5 - Ω
Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
6/23 DocID025283 Rev 1
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 21 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 84 A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward on voltage I
SD
= 21 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time I
SD
= 21 A, V
DD
= 60 V
di/dt=100 A/µs
(see Figure 20)
- 170 ns
Q
rr
Reverse recovery charge - 1.39 µ C
I
RRM
Reverse recovery current - 14 A
t
rr
Reverse recovery time I
SD
= 21 A,V
DD
= 60 V
di/dt=100 A/µs,
T
J
= 150 °C
(see Figure 20)
- 230 ns
Q
rr
Reverse recovery charge - 2.24 µ C
I
RRM
Reverse recovery current - 18 A
DocID025283 Rev 1 7/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical characteristics
23
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220 Figure 3. Thermal impedance for D²PAK and
TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impe dance for TO-247
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15518v1
I
D
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
10
AM16149v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15519v1
Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
8/23 DocID025283 Rev 1
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Static drain-source on-resistance Figure 11. Gate charge vs gate-source voltage
Figure 12. Cap acitance variations Figure 13. Normalized gate threshold voltage vs
temperature
I
D
50
30
10
0
05V
DS
(V)
10
(A)
15
5V
6V
V
GS
=9, 10V
20
40
20
7V
8V
AM16017v1
I
D
50
30
10
0
04V
GS
(V)
8
(A)
2610
20
40
V
DS
=18V
AM16018v1
R
DS(on)
0.140
0.138
0.136
04I
D
(A)
(Ω)
26
0.142
V
GS
=10V
810
0.144
0.146
0.148
12 14 16
0.150
AM16019v1
V
GS
6
4
2
0
020 Q
g
(nC)
(V)
60
8
30 40
10
V
DD
=480V
I
D
=21A
12
300
200
100
0
400
500
V
DS
10 50
V
DS
(V)
AM16020v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
10000
AM16021v1
V
GS(th)
1.00
0.90
0.80
0.70
-50 0T
J
(°C)
(norm)
-25
1.10
75
25 50 100
ID = 250 µA
AM16034v1
DocID025283 Rev 1 9/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Electrical characteristics
23
Figure 14. Normalized on-resistance vs
temperature Figure 15. Source-drain diode forw ard
characteristics
Figure 16. Normalized V
DS
vs temperature Figure 17. Output capacitance stored energy
R
DS(on)
1.7
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.9
2.1 I = 10.5 A
D
V = 10 V
GS
AM16035v1
V
SD
04I
SD
(A)
(V)
268
0
0.2
0.4
0.6
0.8
1
1.0 T
J
=-50°C
T
J
=150°C
T
J
=25°C
10 12 14 16 18
1.2
AM16037v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.91
0.93
0.95
0.97
0.99
1.03
1.05
1.01
I
D
= 1mA
1.07
1.09
AM10636v1
E
oss
2
1
0
0100 V
DS
(V)
(µJ)
400
3
200 300
4
500 600
5
6
7
8
9
10
AM16033v1
Test circuits STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
10/23 DocID025283 Rev 1
3 Test circuits
Figure 18. Switching times test circuit for
resistive load Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times Figure 21. Unclamped inductive load tes t circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID025283 Rev 1 11/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data
23
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
12/23 DocID025283 Rev 1
Table 8. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
DocID025283 Rev 1 13/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data
23
Figure 24. D²PAK (TO-263) drawing
Figure 25. D²PAK footprint
(a)
a. All dimension are in millimeters
Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
14/23 DocID025283 Rev 1
Table 9. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
DocID025283 Rev 1 15/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data
23
Figure 26. TO-220FP drawing
Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
16/23 DocID025283 Rev 1
Table 10. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
DocID025283 Rev 1 17/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data
23
Figure 27. TO-220 type A drawing
?TYPE!?2EV?4
Package mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
18/23 DocID025283 Rev 1
Table 11. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID025283 Rev 1 19/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Package mechanical data
23
Figure 28. TO-2 47 drawing
Packing mechanical data STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
20/23 DocID025283 Rev 1
5 Packing mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
DocID025283 Rev 1 21/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND Packing mechanical data
23
Figure 29. Tape
Figure 30. Reel
Revision history STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
22/23 DocID025283 Rev 1
6 Revision history
Table 13. Document revision history
Date Revision Changes
23-Sep-2013 1 First release.
28-Nov-2013 2
– Modified: I
D
value in cover page
– Modified: I
D
and I
DM
valued in Figure 2
– Modified: R
thj-case
values
– Modified: values in Table 4
– Modified: dv/dt value in Table 5, I
GSS
test condition
– Modified: typical and I
D
values in Table 5
– Modified: I
SD
, typical and max values in Table 7
– Updated: Figure 4, 13, 14, 15 and 16
– Added: Figure 17
– Minor text changes
DocID025283 Rev 1 23/23
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
23
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