TBD62786APG/FNG/FWG
2017-07-05
1
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62786APG, TBD62786AFNG, TBD62786AFWG
8-ch low active source type DMOS tr ansist or ar r ay
TBD62786A series are DMOS transistor arrays with 8 circuits. Each output
has an internal clamp diode that clamps the back electromotive force
generated in driving inductive loads. Please be careful about thermal
conditions during use.
Features
• 8 circuits built-in
• High output voltage : VOUT = 50 V (max)
• Large output current : IOUT = -500 mA (max, per 1 ch)
• Input voltage (output on) : -30 to -2.8 V
• Input voltage (output off) : -1.2 to 0 V
• Package : PG type P-DIP18-300-2.54-001
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
Pin connection (top view)
Pin Connection may be omitted partially or simplified for explanatory purposes.
TBD62786APG
P-DIP18-300-2.54-001
TBD62786AFNG
TBD62786AFWG
P-SOP18-0812-1.27-001
Weight
P
-DIP18-300-2.54-001 : 1.3 g (typ.)
SSOP18
-P-225-0.65 : 0.09 g (typ.)
P
-SOP18-0812-1.27-001 : 0.48 g (typ.)
VCC
I1
I2
I3
I4
I5
I6
I7
I8
GND
O1
O2
O3
O4
O5
O6
O7
O8
© 2017
Toshiba Electronic Devices & Storage Corporation
TBD62786APG/FNG/FWG
2017-07-05
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Pin description
Pin No. Pin name Function
I1
Input pin
I2
Input pin
I3
Input pin
I4
Input pin
I5
Input pin
I6
Input pin
I7
Input pin
I8
Input pin
VCC
Power supply pin
GND
GND pin
O8
Output pin
O7
Output pin
O6
Output pin
O5
Output pin
O4
Output pin
O3
Output pin
O2
Output pin
O1
Output pin
Basic circuit
Basic circuit may be omitted partially or simplified for explanatory purpose.
VCC
OUTPUT
INPUT
Clamp
circuit
Clamp
diode
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Absolute maximum ratings (Ta = 25°C, VCC = 0 V)
Characteristics Symbol Rating Unit
Power supply voltage VCC-VGND 50 V
Output voltage VOUT -50 to 0.5 V
Output current
(per 1 ch)
IOUT -500 mA
Input voltage VIN −30 to 0.5 V
Clamp diode reverse voltage VR 50 V
Clamp diode forward current IF 500 mA
Power
dissipation
PG (Note 1)
PD
1.47
W
FNG (Note 2) 0.96
FWG (Note 3) 1.31
Operating temperature Topr −40 to 85 °C
Storage temperature Tstg −55 to 150 °C
Note 1: Stand alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C.
Operating ranges (Ta = −40 to 85°C and VCC = 0 V, unless otherwise specified)
Characteristics
Symbol
Condition
Min
Typ.
Max
Unit
Power supply voltage VCC-VGND IOUT = -100 mA 2.0 ― 50 V
Output voltage VOUT ― -50 ― 0 V
Output current
(per 1 ch)
PG (Note 1)
IOUT
One circuit ON, Ta = 25 °C 0 ― -400
mA
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10 % 0 ― -390
Duty = 50 % 0 ― -170
FNG (Note 2)
One circuit ON, Ta = 25 °C 0 ― -400
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10 % 0 ― -320
Duty = 50 % 0 ― -140
FWG (Note 3)
One circuit ON, Ta = 25 °C 0 ― -400
tpw = 25 ms
8 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10 % 0 ― -370
Duty = 50 % 0 ― -160
Input voltage (Output on) VIN (ON) IOUT = -100 mA or more, VDS = 2.0 V -30 ― -2.8 V
Input voltage (Output off) VIN (OFF) IOUT = -100 μA or less, VDS = 2.0 V -1.2 ― 0 V
Clamp diode forward current IF ― ― ― 400 mA
Note 1: Stand alone
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)
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Electrical characteristics (Ta = 25°C and VCC = 0 V, unless otherwise specified)
Characteristics Symbol Test
circuit Condition Min Typ. Max Unit
Output leakage current Ileak 1 VIN = 0 V, VOUT = VGND = -50 V
Ta = 85 °C ― ― 1.0 μA
Output voltage
(Output ON-resistance)
VDS
(RON)
2
IOUT = -350 mA, VIN = -2.8 V,
VGND = -5.0 V ― 0.56
(1.6)
1.14
(3.25)
V
(Ω)
IOUT = -200 mA, VIN = -2.8 V,
VGND = -5.0 V ― 0.32
(1.6)
0.65
(3.25)
IOUT = -100 mA, VIN = -2.8 V,
VGND = -5.0 V ― 0.16
(1.6)
0.325
(3.25)
Input current
IIN(ON) 3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― -30 μA
IIN(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ― ― 1 μA
Current consumption
(per 1 ch)
I
CC(ON)
3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― 5 mA
ICC(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ―
―
1 μA
Clamp diode leakage current IR 5 VR = 50 V, Ta = 85 °C ― ― 1 μA
Clamp diode forward voltage VF 6 IF = 350 mA ―
―
2.0 V
Turn-on delay tON
7
VOUT = VGND = -50 V
RL = 160 Ω
CL = 15 pF
― 0.2 ―
μs
Turn-off delay tOFF ― 2.0 ―
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Test circuit
1. Ileak 2. VDS (RON)
3. IIN(ON), ICC(ON) 4. IIN(OFF), ICC(OFF)
5. IR 6. VF
Test circuits may be omitted partially or simplified for explanatory purpose.
Ileak
OUTPUT
GND
VCC
INPUT
VIN
VGND
VOUT
RON = VDS / IOUT
VDS
IOUT
OUTPUT
GND
VCC
INPUT
VIN
VGND
VOUT
OUTPUT
GND
VCC
INPUT
VIN
VGND
IlN(ON)
ICC(ON)
IR
OUTPUT
GND
VCC
INPUT
VR
IF
OUTPUT
GND
VCC
INPUT
VF
OUTPUT
GND
VCC
INPUT
VIN
VGND
IlN(OFF)
ICC(OFF)
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7. tON, tOFF
Note 1: Pulse width 50 μs, Duty cycle 10%
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Note 2: CL includes capacitance of the probe and the test board.
Test circuit and timing charts may be omitted partially or simplified for explanatory purpose.
Precautions for Using
This IC does not incorporate protection circuits for over current and over voltage.
Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred,
the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing,
please consider enough in power supply line, output line, and GND line.
In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the
appropriate fuse in the power supply line.
(注2)
(注1)
Input
C
L
(
Note 2)
(Note 1)
Pulse
generator
VCC
RL
Output
V
OUT
GND
V
GND
tON
tOFF
0 V
VOH
VOL
Input
50%
50 μs
Output
50%
50%
50%
-5.0
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Package dimensions
P-DIP18-300-2.54-001 Unit: mm
Weight: 1.3 g (typ.)
SSOP18-P-225-0.65 Unit: mm
Weight: 0.09 g (typ.)
TBD62786APG/FNG/FWG
2017-07-05
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P-SOP18-0812-1.27-001 Unit: mm
Weight: 0.48 g (typ.)
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2017-07-05
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Notes on Contents
1. Pin Connection
Pin connection may be simplified for explanatory purpose.
2. Basic Circuit
Basic circuit may be simplified for explanatory purpose.
3. Timing Chart
Timing charts may be simplified for explanatory purposes.
4. Test circuit
Test circuit may be simplified for explanatory purpose.
IC Usage Considerations
Notes on handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a
moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of
power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result
in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly
to which current is applied even just once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the
effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
(4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the
negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or
ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the
protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
(5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such
as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input
or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a
speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may
cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL)
connection-type IC that inputs output DC voltage to a speaker directly.
Points to remember on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system design.
TBD62786APG/FNG/FWG
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RESTRICTIONS ON PRODUCT USE
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