AT80602000756AD - INTEL - Datasheet.Directory

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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www.diodes.com

October 2016

DMN3035LWN

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) MAX

ID MAX

TA = +25°C

30V

35mΩ @ VGS = 10V

5.5A

45mΩ @ VGS = 4.5V

4.9A

Description

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Applications

 DC Motor Control

 DC-AC Inverters

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: V-DFN3020-8 (Type N)

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – NiPdAu Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.011 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3035LWN-7

V-DFN3020-8 (Type N)

3,000/Tape & Reel

DMN3035LWN-13

V-DFN3020-8 (Type N)

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/quality/lead_free.html.

Marking Information

V-DFN3020-8 (Type N)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

Code

D

E

F

G

H

I

J

K

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Equivalent Circuit

D

2

S

2

G

2

Q1 N-Channel MOSFET

Q2 N-Channel MOSFET

e4

V-DFN3020-8 (Type N)

Bottom View

D

1

S

1

G

1

Bottom View

Pin Configuration

N3 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: D = 2016)

M = Month (ex: 9 = September)

N3

YM

D1

D2

S1

G1

S2

G2

Pin 1

1

2

3

4

8

7

6

5

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

2 of 7

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October 2016

DMN3035LWN

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

5.5

4.4

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

1

A

Pulsed Drain Current

IDM

30

A

Avalanche Current (Note 7) L = 0.1mH

IAS

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

0.77

W

TA = +70°C

0.49

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

162

°C/W

t<10s

116

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.78

W

TA = +70°C

1.10

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

71

°C/W

t<10s

50

Thermal Resistance, Junction to Case (Note 6)

RJC

10.7

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

30



V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS



1.0

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS



±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0



2.0

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)



26

34

35

45

mΩ

VGS = 10V, ID = 4.8A

VGS = 4.5V, ID = 4.3A

Diode Forward Voltage

VSD



0.75

1.1

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



399



pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



57



pF

Reverse Transfer Capacitance

Crss



50



pF

Gate Resistance

Rg



1.36



Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg



4.5



nC

VDS = 15V, ID = 5.8A

Total Gate Charge (VGS = 10V)

Qg



9.9



nC

Gate-Source Charge

Qgs



1.2



nC

Gate-Drain Charge

Qgd



1.8



nC

Turn-On Delay Time

tD(ON)



3.0



ns

VDD = 15V, VGS = 10V,

RL = 2.6Ω, RG = 3Ω

Turn-On Rise Time

tR



3.3



ns

Turn-Off Delay Time

tD(OFF)



10.6



ns

Turn-Off Fall Time

tF



2.0



ns

Reverse Recovery Time

tRR



7.9



ns

IF = 4.8A, di/dt = 100A/μs

Reverse Recovery Charge

QRR



2.4



nC

IF = 4.8A, di/dt = 100A/μs

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C .

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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DMN3035LWN

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS=2.0V VGS=2.5V VGS=3.0V

VGS=4.0V

VGS=4.5V

VGS=5.0V

VGS=8.0V

VGS=10V

0

0.2

0.4

0.6

0.8

1

0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS=5V

-55℃

+25℃

+85℃

+125℃

+150℃

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current

and Gate Voltage

VGS=4.5V

VGS=10V

0.01

0.02

0.03

0.04

0.05

0 5 10 15 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)

ID, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current

and Temperature

VGS=10V

-55℃

+25℃

+85℃

+125℃

+150℃

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

VGS=10V, ID=4.8A

VGS=4.5V, ID=4.3A

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

2 4 6 8 10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID=4.3A

ID=4.8A

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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October 2016

DMN3035LWN

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

VGS=4.5V, ID=4.3A

VGS=10V, ID=4.8A

0

5

10

15

20

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

TA=-55℃

TA=+25℃

TA=+85℃

TA=+125℃

TA=+150℃

VGS=0V

1

10

100

1000

10000

0 5 10 15 20 25 30

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0 2 4 6 8 10 12

VGS, GATE-SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 11. Gate Charge

VDS=15V, ID=5.8A

0.01

0.1

1

10

100

0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

TJ(Max)=+150℃

TA=+25℃

Single Pulse

DUT on

1*MRP Board

VGS=10V

RDS(ON) Limited

DC

PW=10s

PW=1s

PW=100ms

PW=10ms

PW=

1ms

PW=100µs

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs

JunctionTemperature

ID=250mA

ID=1mA

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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October 2016

DMN3035LWN

0.001

0.01

0.1

1

1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

RθJA(t)=r(t) * RθJA

RθJA=162oC/W

Duty Cycle, D=t1/t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5

D=0.7

D=0.9

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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October 2016

DMN3035LWN

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

V-DFN3020-8 (Type N)

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

V-DFN3020-8 (Type N)

V-DFN3020-8

(Type N)

Dim

Min

Max

Typ

A

0.77

0.83

0.80

A1

0

0.05

0.02

A3

-

0.203

b

0.24

0.34

0.29

D

2.95

3.05

3.00

D2

0.84

1.04

0.94

e

-

0.65

E

1.95

2.05

2.00

E2

0.70

0.90

0.80

L

0.27

0.37

0.32

L1

0.15

0.25

0.20

K

-

0.68

Z

-

0.38

All Dimensions in mm

Dimensions

Value

(in mm)

C

0.650

G

0.580

X

0.390

X1

1.040

X2

2.340

Y

0.520

Y1

0.900

Y2

0.300

Y3

2.300

D

E

b

AA1

A3

Seating Plane

E2

e

L1

L

K

Z(4x)

(Pin #1 ID)

D2

X2

Y3

CY

X

G

Y1

X1

Y2

DMN3035LWN

Document number: DS37528 Rev. 3 - 2

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DMN3035LWN

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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