No. 1269 2SD1402 gy NPN Triple Diffused Planar Type Silicon Transistor For CTV HorRIZONTAL DEFLECTION OUTPUT Features: * High breakdown voltage and high reliability * High switching speed * Capable of being mounted easily due to one-point fixing type plastic mold package Absolute Maximum Ratings at Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics at Ta=25C Collector Cutoff Current Emitter Cutoff Current DC Current gain Gain Bandwidth Prodcut C-E Saturation Voltage Saturation Voltage Breakdown Voltage Breakdown: :Voltage Breakdown Voltage Fall Time Switching Time Test Circuit PW=20us ,Dutyg1% -lp2 ~< IB1 INPUT We 3 These specifications are subject to change without notice OUTPUT O Ta=25C unit VcBo 1500 V VCEO 800 V VEBO 7 Vv Ic 5 A lep 16 A Po TC=25C 120 wW T5 150 C Tstg -55 to +150 C min typ max unit Icpo VcB=800V, IR=0 10 uA IEBO VEB=5V,Ic=0 1 mA hpr VcR=5V,Ic=1A 8 7 VcR=10V,Ic=1A 3 MHz VcE(sat) Ic=4A,Ip=0.8A 5 Vv VBE (sat) Ic=4A,Ip=0-.8A 1.5 V V(BR)CBO Ic=5mA,Ip=0 1500 Vv V (BR) CEO Tc=100mA, Rpp=00 800 Vv V(BR)EBO Ip=200mA, Ic=0 7 V te Ic=4A,Ip,=0.8A,I1p2=-1.6A 0.7 us Case Outline 2022 (unit:mm) te 20.0 >{ 1.0 | r{ , =e so | p s T5020. + E: Emitter : Collector : Base TOKYO SANYO ELECTRIC CO.,LTD. SEMICONDUCTOR DIVISION {S-t3. 6-CHOME. SOTOKANDA. CHIYODA-KU. TOKYO IOI JAPAN 5033KI MT No.1269-1/3