
SILICON BRIDGE RECTIFIERS
* High current capability
* High surge current capability
* Low forward voltage drop
* High case dielectric strength
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR
BR
BR
BR
BR
BR
BR
UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°CIF(AV) 35 Amp.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method) IFSM 400 Amp.
Current Squared Time at t < 8.3 ms. I2t660 A2S
Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF1.1 Volts
Maximum DC Reverse Current Ta = 25 °CIR10 µA
at Rated DC Blocking Voltage Ta = 100 °CIR(H) 200 mA
Typical Thermal Resistance at Junction to Case ( Note 1 ) RθJC 1.5 °C/W
Typical Thermal Resistance at Junction to Ambient RθJA 10 °C/W
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
RATING
Dimensions in inches and ( millimeters )
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
0.470 (11.9)
0.430 (10.9)
1.2 (30.5)
0.21 (5.3)
0.20 (5.1)
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)