DINTERSIL ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25C (unless otherwise noted) PIN CHIP Maximum Temperatures CONFIGURATION TOPOGRAPHY Storage Temperature -65C to +200C 10-71 6017 Operating Junction Temperature +#150C 0234 002 -e| Lead Temperature (Soldering, | n+>-@ $1 10 sec. time limit) +300C 020 614 Maximum Power Dissipation | Device Dissigation @ 85C Free Air Temperature One Side 250 mW SOURCE 3x6 MIL Both Sides 500 mW DRAIN oat Linear Derating s, C2 G2 s, One Side 2.56 mwW/C Sr Both Sides 4.3 mw/C ORDERING INFORMATION Maximum Voltages & Currents TO-71 WAFER DICE Vag Gate to Source Voltage ~b0 V 2N5196 | 2N5196/W_| 2N5196/D Vgp Gate to Drain Voltage ~5O0 V 2N5197 | 2N5197/W_| 2N5197/D 1g Gate Current 50 mA 2N5198 | 2N5198/W_| 2N5198/D 2N5199 | 2N5199/W | 2N5199/D 2N5196-2N5199 Monolithic Dual N-Channel JFET 2 op. | =r} ELECTRICAL CHARACTERISTICS (25C unless otherwise specified) PARAMETER MIN MAX UNIT TEST CONDITIONS ! Gate Reverse Current ~% pa Vv 30V,V 0 rr ze ' = = a GSS Reverse Gu 50 | nA Gs DS 160C BVGss Gate-Source Breakdown Voltage -50 ig =-1 uA, Vps=0 VGSioft) Gate-Source Cutoff Voltage -07 4 Vv Vps = 20V, Ip =i nA _ Vos Gate-Source Voltage 0.2 -3.8 . ~15 A Vog = 20 V, Ip = 200 ZA Ig Gate Operating Current 715 mA DG Dd [ C J | loss Saturation Drain Current (Note 1) 0.7 7 mA Vos = 20 V, Ves = 0 Sfs Common-Source Forward Transconductance (Note 1) 1000 4000 Vps = 20 V, VGs =0 fs * Common-Source Forward Transconductance (Note 1} 700 1600 mh Vpg = 20 V, Ip = 200 pA f=ikHe Gos Gommon-Source Output Conductance 50 meno Vps = 20 V, VGs =0 Sos Cammon-Source Output Conductance 4 VpG = 20 V, Ip = 200 pA Ciss Common-Source Input Capacitance 6 . - pF = 1 MHz Crss Common-Source Reverse Transfer Capacitance 2 __. . . - = 100 Hz, NE Spot Noise Figure 0.5 aB Vos * 20 V, Ves = 0 Rg =10 MQ . . - u . Vus Equivalent Input Noise Voltage 0.020 f= 1kHz n 20 Vz 2N5196 2N5197 2N5198 2N5199 PARAMETER . UNIT TEST CONDITIONS MIN MAX | MIN MAX | MIN MAX | MIN MAX : . , VpG = 20 V, - 1 ilg1-lg2! Differential Gate Current 5 5 5 5 nA Ip = 200 | 125 Cc | I Sat ion Drain C i 'pssi/Ipss2__ Saturation Drain Current Ratio | jos y logs 61 fogs 1 [098 1] Vos = 20 V, Vag = 0V (Note 1} . T t Rati Sfs1/ fs2 ransconductance Ratio 097 1 |o97 +1 1095 1 [oss 71 | - f=1kHz (Note t} . \VGs1-VGgs2! Differential Gate-Source Voltage 5 5 10 15 mv _ . Vpg=20v,/ Ta=25 Cc 5 1 20 40 3 Alvest-Vasal Sate Source Differential Voltage vee} 12= 200HA | Tas 128_| aT! Change with Temperature 5 10 20 . 40 BVI'C Ta= -85C (Note 2) Tg = 25C 199$1-Gos2l Differentiat Output Conductance 1 1 1 1 umho f= 1kHz NOTE: 1. Pulse test required, pulsewidth = 300 pss, duty cycle < 3%. 2. Measured at end points, Ta and Tg. 1-78