MCO100-12io1 Thyristor VRRM = 1200 V I TAV = 101 A VT = 1.3 V Single Thyristor Part number MCO100-12io1 Backside: isolated 3 1/4 2 Features / Advantages: Applications: Package: SOT-227B (minibloc) Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140123a MCO100-12io1 Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1200 V TVJ = 25C 100 A VR/D = 1200 V TVJ = 125C 10 mA I T = 100 A TVJ = 25C 1.31 V 1.66 V 1.30 V I T = 200 A TVJ = 125 C I T = 100 A I T = 200 A I TAV average forward current TC = 80C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It value for fusing 1.74 V T VJ = 150 C 101 A 160 A TVJ = 150 C 0.85 V 350 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.40 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.51 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 1.19 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.29 kA t = 10 ms; (50 Hz), sine TVJ = 45C 9.80 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 9.49 kAs TVJ = 150 C 7.08 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 6.87 kAs 74 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.10 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 4.5 0.35 TVJ = 150C; f = 50 Hz repetitive, IT = 300 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM non-repet., IT = 100 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 150C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 200 mA TVJ = 150 C 0.2 V 10 mA TVJ = 25 C 450 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = 1.5 V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.3 A; di G /dt = 0.3 A/s VR = 100 V; I T = 100 A; VD = VDRM TVJ = 150 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved 150 s 15 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20140123a MCO100-12io1 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 1) Weight 30 g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL 10.5 8.6 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Part No. Logo XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Part Number MCO100-12io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCO100-12io1 * on die level Delivery Mode Tube Code No. 500605 T VJ = 150 C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 2.4 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20140123a MCO100-12io1 Outlines SOT-227B (minibloc) 3 1/4 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140123a MCO100-12io1 Thyristor 1200 200 50 Hz, 80% VRRM VR = 0 V 10000 160 1000 TVJ = 45C IT 120 ITSM [A] 80 [A] TVJ = 45C 2 It 800 TVJ = 125C 2 [A s] TVJ = 125C 600 40 125C 150C 0 0.4 10 TVJ = 25C 400 0.8 1.2 1.6 1000 2.0 0.01 0.1 1 1 2 3 4 5 6 7 8 910 VT [V] t [s] t [ms] Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) 2 1000 1: IGD, TVJ = 125C 180 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 5 2 VG 3 140 6 100 4 120 typ. tgd 1 1 dc = 1 0.5 0.4 0.33 0.17 0.08 160 IT(AV)M Limit 100 [A] [s] [V] 10 80 60 TVJ = 125C 40 4: PGAV = 0.5 W IGD, TVJ = 125C 0.1 1 10 20 5: PGM = 5 W 6: PGM = 10 W 100 1000 1 10 10000 0 100 1000 0 25 IG [mA] IG [mA] 200 75 100 125 150 TC [C] Fig. 5 Gate controlled delay time Fig. 4 Gate trigger characteristics 50 Fig. 6 Max. forward current at case temperature 0.4 dc = 1 0.5 0.4 0.33 0.17 0.08 150 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 P(AV) 100 0.3 ZthJC 0.2 Rthi [K/W] [K/W] [W] 50 0.1 0 0 20 40 60 80 100 120 0 IF(AV) [A] 50 100 150 Tamb [C] (c) 2014 IXYS all rights reserved 101 102 0.011 0.002 0.050 0.085 0.160 0.027 0.500 0.180 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0.0 100 ti [s] 0.025 0.030 Fig. 8 Transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20140123a