VBO 13 Single Phase Rectifier Bridge IdAV = 18 A VRRM = 800-1600 V Standard and Avalanche Types + VRSM VBRmin VRRM Standard Avalanche V V V Types Types 900 800 VBO 13-08NO2 1300 1230 1200 VBO 13-12NO2 VBO 13-12AO2 1700 1630 1600 VBO 13-16NO2 VBO 13-16AO2 ~ ~ ~ + ~ For Avalanche Types only - Symbol Conditions IdAV IdAVM PRSM TC = 85C, module module TVJ = TVJM IFSM TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms TVJ = TVJM; VR = 0 I2t Maximum Ratings * Avalanche rated parts available * Package with DCB ceramic base plate * Isolation voltage 3600 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on terminals * UL registered E 72873 A A kW (50 Hz) (60 Hz) 220 230 A A t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 180 190 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 240 220 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 160 150 A2s A2s -40...+150 150 -40...+125 C C C 3000 3600 V~ V~ * Easy to mount with one screw * Space and weight savings * Improved temperature & power cycling 1.5-2 13-18 Nm lb.in. Dimensions in mm (1 mm = 0.0394") 15 g VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) (10-32 UNF) Weight Typ. Symbol Conditions IR VR = VRRM TVJ = 25C TVJ = TVJM TVJ = 25C t = 1 min t=1s Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages Characteristic Values 0.3 5.0 mA mA VF IF = 55 A 1.8 V VT0 rt For power-loss calculations only 0.85 17 V mW RthJC per diode; 120 el. per module per diode; 120 el. per module 5.60 1.40 6.00 1.50 K/W K/W K/W K/W 13 9.5 50 mm mm m/s2 dS dA a Features 18 30 2.5 TVJ TVJM Tstg RthJH - Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. for resistive load at bridge output with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20100706b 1-2 VBO 13 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 4 Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Fig. 5 Rthi (K/W) 0.059 2.714 3.227 ti (s) 0.00217 0.159 2.34 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. (c) IXYS All rights reserved 20100706b 2-2