Chip Silicon Rectifier
FFM101-M THRU FFM107-M
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
(V) (V) (V) (V) (nS) (oC)
FFM101-M F1 50 35 50
FFM102-M F2 100 70 100
FFM103-M F3 200 140 200
FFM104-M F4 400 280 400
FFM105-M F5 600 420 600 250
FFM106-M F6 800 560 800
FFM107-M F7 1000 700 1000
-55 to +150
Operating
temperature
VRRM
*1 VRMS
*2 VR
*3 VF
*4 TRR
*5
500
150
SYMBOLS MARKING
CODE
1.3
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT
Forward rectified current Ambient temperature = 55oCIO1.0 A
Forward surge current 8.3ms single half sine-wave superimposed on
rate load (JEDEC methode) IFSM 30 A
VR = VRRM TA = 25oC5.0 uA
VR = VRRM TA = 100oC100 uA
Thermal resistance Junction to ambient RqJA 42 oC / w
Diode junction capacitance f=1MHz and applied 4vDC reverse voltage CJ15 pF
Storage temperature TSTG -55 +150 oC
Reverse current IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.161(4.1)
0.146(3.7) 0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-123
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FFM101-M THRU FFM107-M)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
35
30
25
20
15
10
5
0
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
.01 .05 .1 .5 1 5 10 50 100
D.U.T.
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
AMBIENT TEMPERATURE ( C)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
WW
Tj=25 C
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1 10 5 50 100
Tj=25 C 8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0 20 40 60 80 100 120 140 160 180 200
0
