TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HIGH SPEED SWITCHING 1SS385F 1SS385F Unit in mm _ 1.6 #04 85 + 0.1 @ Low Forward Voltage : Vp = 0.23 V (Typ.) @Ip =5mA en -8 tf $9 @ Ultra-Small Package le N ra Fe MAXIMUM RATINGS (Ta = 25C) 22 a CHARACTERISTIC SYMBOL | RATING | UNIT = o Maximum (Peak) Reverse Voltage VRM 15 Vv - 5 Reverse Voltage VR 10 Vv x = Maximum (Peak) Forward Current IfM 200 (*) | mA oe - Average Forward Current Io 100 (*) | mA Surge Current (10 ms) Irom 1 (*) A Power Dissipation P 100 mW Junction Temperature Tj 125 C 1. ANODE1 Storage Temperature Range Tstg 55~125 C 2. ANODE2 Operating Temperature Range Topr 40~100 C ESM 3. CATHODE JEDEC _ : . ae . (*) Unit Rating. Total Rating = Unit Rating x 1.5 EIAJ _ TOSHIBA ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT VF(1) |Ip=1mA 0.18 | Vv Forward Voltage VF(2) |Ip=5mA 0.23 | 0.30 Vv VF(3) |Ip = 100mA 0.35 | 0.50 Vv Reverse Current IR VR=10V 20 | nA Total Capacitance Cyr Vr = 0, f= 1 MHz 20 40 | pF EQUIVALENT CIRCUIT (TOP VIEW) Marking C] O * 09 LI LI UO Uu 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-02-17 1/2 TOSHIBA 1SS385F Tp (A) FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) 300 m 100m 30m 10m 10m Ip VF 0.1 0.2 0.3 0.4 30m FORWARD VOLTAGE VF (V) CT VR f=1MHz Ta = 25C 0.1 0.3 1 3 REVERSE VOLTAGE VR (V) 10 0.5 REVERSE CURRENT Ip (A) POWER DISSIPATION P (mW) IR VR Ta = 100C 2 4 6 8 10 12 14 REVERSE VOLTAGE VR (V) P Ta 140 120 100 80 60 40 20 0 25 50 15 100 125 150 AMBIENT TEMPERATURE Ta (CC) 1999-02-17 2/2