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MS2206
DESCRIPTION:DESCRIPTION:
The MS2206 is a common base, silicon NPN microwave transistor
designed for Class C driver applications under DME or IFF pulse
conditions. This device is capable of withstanding an infinite load
VSWR at any phase angle under rated conditions.
AABSOLUTE MAXIMUM RATINGS BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
7.5
VCE Collector-Emitter Bias Voltage 37 V
TJ Junction Temperature 200
IC Device Current 1.0 A
TSTG Storage Temperature -65 to +200
Thermal DataThermal Data
RTH(J-C)
Junction-case Thermal Resistance*
35 °°C/W
FeaturesFeatures
• 1025-1150 MHz
• GOLD METALLIZATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• Pout = 4 W MINIMUM
• GP= 10 dB
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.280 4LSL (M115)
Epoxy Sealed
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855