MV2111G - ON Semiconductor - Datasheet.Directory

January, 2006 − Rev. 4 1Publication Order Number:

MMBV2101LT1/D

MMBV2101LT1 Series,

MV2105, MV2101, MV2109,

LV2209

Preferred Device

Silicon Tuning Diodes

These devices are designed in popular plastic packages for the high

volume requirements of FM Radio and TV tuning and AFC, general

frequency control and tuning applications. They provide solid−state

reliability in replacement of mechanical tuning methods. Also

available in a Surface Mount Package up to 33 pF.

Features

•High Q

•Controlled and Uniform Tuning Ratio

•Standard Capacitance Tolerance − 10%

•Complete Typical Design Curves

•Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR30 Vdc

Forward Current IF200 mAdc

Forward Power Dissipation

@ TA = 25°C MMBV21xx

Derate above 25°C

@ TA = 25°C MV21xx

Derate above 25°C LV2209

PD225

1.8

280

2.8

mW/°C

Junction Temperature TJ+150 °C

Storage Temperature Range Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mAdc)MMBV21xx, MV21xx

LV2209

V(BR)R

25 −

−−

−

Vdc

Reverse Voltage Leakage Current

(VR = 25 Vdc, TA = 25°C) IR− − 0.1 mAdc

Diode Capacitance Temperature Co-

efficient (VR = 4.0 Vdc, f = 1.0 MHz) TCC− 280 − ppm/°C

Preferred devices are recommended choices for future use

and best overall value.

Cathode 1

Anode

Cathode 1

Anode

SOT−23

TO−92

yyyy

AYWW G

TO−92 (TO−226AC)

CASE 182

STYLE 1

SOT−23 (TO−236)

CASE 318−08

STYLE 8

yyyyyy = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

6.8−100 pF, 30 VOLTS

VOLTAGE VARIABLE

CAPACITANCE DIODES

xxx M G

xxx = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

MARKING

DIAGRAMS

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

http://onsemi.com

CT, Diode Capacitance

VR = 4.0 Vdc, f = 1.0 MHz

Q, Fi gure of Merit

VR = 4.0 Vdc,

f = 50 MHz

TR, Tuning Ratio

C2/C30

f = 1.0 MHz

Device Marking Package Shipping†Min Nom Max Typ Min Typ Max

MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2

MMBV2101LT1G M4G SOT−23

(Pb−Free) 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2

MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2

MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2

MV2101G MV2101 TO−92

(Pb−Free) 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2

MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2

MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2

MMBV2105LT1G 4U SOT−23

(Pb−Free) 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2

MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2

MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2

MV2105G MV2105 TO−92

(Pb−Free) 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2

MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2

MMBV2107LT1G 4W SOT−23

(Pb−Free) 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2

MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2

MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2

MMBV2108LT1G 4X SOT−23

(Pb−Free) 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2

LV2209 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2

MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2

MMBV2109LT1G 4J SOT−23

(Pb−Free) 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2

MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2

MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2

MV2109G MV2109 TO−92

(Pb−Free) 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1”

suffix when ordering any of these devices in bulk.

PARAMETER TEST METHODS

1. CT, DIODE CAPACITANCE

(CT = C C + CJ). C T is m easured a t 1 .0 M Hz u sing a c apacitance

bridge (Boonton Electronics Model 75A or equivalent).

2. TR, TUNING RATIO

TR is the ratio of CT measured at 2.0 Vdc divided by CT

measured at 30 Vdc.

3. Q, FIGURE OF MERIT

Q i s c alculated b y t aking t he G and C r eadings o f a n a dmittance

bridge at the specified frequency and substituting in the

following equations:

Q+2pfC

(Boonton Electronics Model 33AS8 or equivalent). Use L ead

Length [ 1/16″.

4. TCC, DIODE CAPACITANCE TEMPERATURE

COEFFICIENT

TCC i s g uaranteed by comparing CT at VR = 4 .0 Vdc, f = 1.0

MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1 .0 MHz, TA

= +85°C in the following equation, which defines TCC:

TCC+ŤCT()85°C) – CT(–65°C)

85 )65 Ť·106

CT(25°C)

Accuracy limited by measurement of CT to ±0.1 pF.

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

http://onsemi.com

TYPICAL DEVICE CHARACTERISTICS

Figure 1. Diode Capacitance versus Reverse Voltage

Figure 2. Normalized Diode Capacitance versus

Junction Temperature Figure 3. Reverse Current versus Reverse Bias

Voltage

Figure 4. Figure of Merit versus Reverse Voltage

VR, REVERSE VOLTAGE (VOLTS)

1.0 2.00.2 10 3020

1.0

2.0

5.0

1000

100

500

5.0

0.5

0.1

200

CT, DIODE CAPACITANCE (pF)

TA = 25°C

f = 1.0 MHz

MMBV2109LT1/MV2109

1.040

1.030

1.020

1.010

1.000

0.990

0.980

TJ, JUNCTION TEMPERATURE (°C)

+125−75 −25 0 +25 +50−50 +75

NORMALIZED DIODE CAPACITANCE

+100

0.970

0.960

VR = 2.0 Vdc

VR = 4.0 Vdc

VR = 30 Vdc

100

5.0

0.01

VR, REVERSE VOLTAGE (VOLTS)

5.0 10 2015 25

, REVERSE CURRENT (nA)

0.02

0.05

0.10

0.20

0.50

1.0

2.0

TA = 125°C

TA = 75°C

TA = 25°C

100

200

500

1000

5000

2000

1.0 2.0 5.0 7.0 10

3.0 20

VR, REVERSE VOLTAGE (VOLTS)

Q, FIGURE OF MERIT

2000

1000

200

500

300

100

f, FREQUENCY (MHz)

10 30 50 70

Q, FIGURE OF MERIT

100

3000

10 20 200 250

TA = 25°C

f = 50 MHz

TA = 25°C

VR = 4.0 Vdc

Figure 5. Figure of Merit versus Frequency

MMBV2105LT1/MV2105

MMBV2101LT1/MV2101

3.00.3

300

3000

MMBV2101LT1/MV2101

MMBV2109LT1

5000

MMBV2101LT1/MV2101

MMBV2109LT1/MV2109

NORMALIZED TO CT

at TA = 25°C

VR = (CURVE)

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209

http://onsemi.com

PACKAGE DIMENSIONS

ÉÉ

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND ZONE R IS

UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

SECTION X−X

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.21

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.050 BSC 1.27 BSC

H0.100 BSC 2.54 BSC

J0.014 0.016 0.36 0.41

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.03 2.66

P−−− 0.050 −−− 1.27

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

STYLE 1:

PIN 1. ANODE

2. CATHODE

TO−92 (TO−226AC)

CASE 182−06

ISSUE L

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Phone: 81−3−5773−3850

MMBV2101LT1/D

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