INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 19 August 2016. MIL-PRF-19500/255AA 19 MAY 2016 w/AMENDMENT 1 SUPERSEDING MIL-PRF-19500/255AA 18 Sept 2015 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2221, 2N2222, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F', "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2221A and 2N2222A) (TO-18) in accordance with figure 1, (UA) in accordance with figure 2, (UB, UBC, UBN, and UBCN) in accordance with figure 3. The dimensions and topography for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4. The C version die in accordance with figure 5. The D version die in accordance with figure 6. 1.3 Maximum ratings. Unless otherwise specified TA = +25C. Types All devices IC VCBO VCEO VEBO TJ and TSTG mA dc V dc V dc V dc C 800 75 50 6 -65 to +200 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil. AMSC N/A FSC 5961 MIL-PRF-19500/255AA w/AMENDMENT 1 1.3 Maximum ratings. Unless otherwise specified TA = +25C. - Continued. Types 2N2221A, AL 2N2222A, AL 2N2221AUA 2N2222AUA 2N2221AUB, UBC, UBN and UBCN 2N2222AUB, UBC, UBN and UBCN (1) (2) (3) (4) PT TA = +25C (1) (2) W 0.50 0.50 (4) 0.50 (4) 0.50 PT TC = +25C (1) (2) W 1 1 N/A N/A PT TSP(IS) = +25C (1) (2) W N/A N/A 1 1 PT TSP(AM) = +25C (1) (2) W N/A N/A 1.5 1.5 RJA (2) (3) C/W 325 325 (4) 325 (4) 325 RJC (2) (3) C/W 150 150 N/A N/A RJSP(IS) (2) (3) C/W N/A N/A 110 110 RJSP(AM) (2) (3) C/W N/A N/A 40 40 (4) 0.50 N/A 1 N/A (4) 325 N/A 90 N/A (4) 0.50 N/A 1 N/A (4) 325 N/A 90 N/A For derating, see figure 7, figure 8, figure 9, figure 10, and figure 11. See 3.3 for abbreviations. For thermal impedance curves, see figure 12, figure 13, figure 14, figure 15, and figure 16. For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figure 8 And figure 13 for the UA, UB, UC, UBN, and UBCN package and use RJA. 1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25C. hFE at VCE = 10 V dc Limits hFE1 IC = 0. 1 mA dc AL, UA, UB, UBC, UBN, and UBCN 2N2221A, 2N2222A Min Max 30 Types 50 hFE2 IC = 1.0 mA dc AL, UA, UB, UBC, UBN, and UBCN 2N2221A, 2N2222A 35 150 Limit 75 325 hFE3 IC = 10 mA dc AL, UA, UB, UBC, UBN, and UBCN 2N2221A, 2N2222A 40 /hfe/ f = 100 MHz VCE = 20 V dc IC = 20 mA dc 100 hFE4 (1) IC = 150 mA dc AL, UA, UB, UBC, UBN, and UBCN 2N2221A, 2N2222A 40 120 100 300 hFE5 (1) IC = 500 mA dc AL, UA, UB, UBC, UBN, and UBCN 2N2221A, 2N2222A 20 30 Switching (saturated) Cobo 100 kHz f 1 MHz VCB = 10 V dc IE = 0 ton See figure 17 toff See figure 18 pF ns ns 8 35 300 2N2221A, 2N2222A AL, UA, UB, UBC, UBN, and UBCN Min Max 2.5 Types Limit VCE(sat)1 (1) IC = 150 mA dc IB = 15 mA dc VCE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc VBE(sat)1 (1) IC = 150 mA dc IB = 15 mA dc VBE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc V dc V dc V dc V dc 0.3 1.0 0.6 1.2 2.0 2N2221A, 2N2222A AL, UA, UB, UBC, UBN, and UBCN Min Max (1) Pulsed see 4.5.1. 2 MIL-PRF-19500/255AA w/AMENDMENT 1 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein. See 6.6 for PIN construction example and 6.7 for a list of available PINs. 1.5.1 JAN certification mark and quality level. 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS". 1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for unencapsulated devices (die) that are applicable for this specification sheet from the lowest to the highest level are as follows: "JANHC" and "JANKC". 1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels that are applicable for this specification sheet from lowest to highest are as follows: "M", "D", "P", "L", "R", "F", "G", and "H"). 1.5.3 Device type. The designation system for the device types of transistors covered by this specification sheet are as follows. 1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and letter symbols "2N". 1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification sheet are as follows: "2221" and "2222". 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN in the order listed in the table as applicable: A Indicates a modified version of the non-suffix device. L For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. UA Indicates a 4 pad surface mount package. (see figure 2) UB Indicates a 4 pad surface mount package. The metal lid is connected to pad 4 (see figure 3) UBN Indicates a 4 pad surface mount package. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only. (see figure 3). UBC Indicates a 4 pad surface mount package. (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring. UBCN Indicates a 4 pad surface mount package. (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only. 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500. 1.5.6 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The manufacturer die identifiers that are applicable for this specification sheet are "B", "C", and "D". 3 MIL-PRF-19500/255AA w/AMENDMENT 1 Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45 TP 45 TP 1, 2, 9, 11, 12, 13 Note 6 7,8 7,8,13 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. FIGURE 1. Physical dimensions (similar to TO-18). 4 MIL-PRF-19500/255AA w/AMENDMENT 1 UA Symbol BL BL2 BW BW2 CH L3 LH LL1 LL2 LS LW LW2 Pin no. Transistor Dimensions Inches Millimeters Min Max Min Max .215 .225 5.46 5.71 .225 5.71 .145 .155 3.68 3.93 .155 3.93 .061 .075 1.55 1.90 .003 0.08 .029 .042 0.74 1.07 .032 .048 0.81 1.22 .072 .088 1.83 2.23 .045 .055 1.14 1.39 .022 .028 0.56 0.71 .006 .022 0.15 0.56 1 Collector 2 Emitter 3 Base Note 3 5 5 4 N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension CH controls the overall package thickness. When a window lid is used, dimension CH must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. The corner shape (square, notch, radius) may vary at the manufacturer's option, from that shown on the drawing. 5. Dimensions LW2 minimum and L3 minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on the bottom two layers, optional on the top ceramic layer.) Dimension LW2 maximum define the maximum width of the castellation at any point on its surface. Measurement of this dimension may be made prior to solder dipping. 6. The co-planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions, surface mount (UA version). 5 MIL-PRF-19500/255AA w/AMENDMENT 1 FIGURE 3. Physical dimensions, surface mount (UB, UBN, UBC, and UBCN versions). 6 MIL-PRF-19500/255AA w/AMENDMENT 1 Dimensions Symbol * BL BW BH BH BH BH CL CW LL1 LL2 LS1 LS2 LW r r1 r2 Inches Min .115 .085 .046 .046 .055 .055 .022 .014 .035 .071 .016 Millimeters Min Max 2.92 3.25 2.16 2.74 1.17 1.42 1.17 1.42 1.40 1.75 1.40 1.75 3.25 2.74 0.56 0.97 0.356 0.89 0.89 1.02 1.80 2.01 0.41 0.61 0.20 0.30 0.56 Max .128 .108 .056 .056 .069 .069 .128 .108 .038 .035 .040 .079 .024 .008 .012 .022 Note UB only, 4 UBN only, 5 UBC only, 6 UBCN only, 7 3 places 3 places 6 8 UB and UBC only, 8 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. UB only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the metal lid. 5. UBN only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only. 6. UBC (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring. 7. UBCN (ceramic lid) only: Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Isolated lid with three pads only. 8. For design reference only. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 3. Physical dimensions, surface mount (UB, UBN, UBC, and UBCN versions) - Continued. 7 MIL-PRF-19500/255AA w/AMENDMENT 1 E B Physical characteristics: B-version NOTES: 1. Chip size: 2. Chip thickness: 3. Top metal: 4. 5. 6. 7. 8. .023 x .023 inch .002 inch (0.584 mm x 0.584 mm 0.051 mm). .010 .0015 inch (0.254 mm 0.038 mm). Aluminum 15,000A minimum, 18,000A nominal for JANHC. AlSiCu 16,000A minimum, 18,000A nominal for JANKC. Back metal: Gold 4,500A minimum, 5,000A nominal. Glassivation: Si3N4 2,000 A minimum, 8,000 A nominal for JANHC. SiON 8,500 A minimum, 9,000 A nominal for JANKC Backside: Collector. Bonding pad: B = .0042 x .0042 inch (0.107 mm x 0.107 mm). E = .0042 x .0042 inch (0.107 mm x 0.107 mm). In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. JANHC and JANKC (B-version) die dimensions. 8 MIL-PRF-19500/255AA w/AMENDMENT 1 E B NOTES: 1. Die size: .020 x .020 inch (0.508 mm x 0.508 mm). 2. Die thickness: .008 .0016 inch (0.2032 mm 0.04064 mm). 3. Base bonding pad: .004 x .004 inch (0.1016 mm x 0.1016 mm). 4. Emitter bonding pad: .004 x .004 inch. 5. Back metal: Gold, 6,500 1,950 A. 6. Top metal: Aluminum, 27,000 3,000 A. 7. Back side: Collector. 8. Glassivation: SiO2, 7,500 1,500 A. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. JANHC and JANKC (C-version) die dimensions. 9 MIL-PRF-19500/255AA w/AMENDMENT 1 E B NOTES: * 1. Chip size: 2. Chip thickness 3. Top metal: 4. Back metal: 5. Glassivation: 6. Backside: 7. Bonding pad: .025 x .025 inch .002 inch ( 0.635 mm x 0.635 mm 0.051 mm). .010 .0015 inch (0.254 mm 0.038 mm). AlSiCu 16,260 A minimum, 20,320 A nominal for JANHC and JANKC. Gold 4,500 A minimum, 5,000 A nominal for JANHC and JANKC. 6,500 A minimum, 8,000 A nominal for JANHC and JANKC. SiO2 Collector. B = .0043 x .0043 inch (0.110 mm x 0.110 mm). E = .0043 x .0043 inch (0.110 mm x 0.110 mm). 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 6. JANHC and JANKC (D-version) die dimensions. 10 MIL-PRF-19500/255AA w/AMENDMENT 1 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http://quicksearch.dla.mil. 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB ............................................. Printed circuit board. RJA .............................................. Thermal resistance junction to ambient. RJC .............................................. Thermal resistance junction to case. RJSP(AM) ....................................... Thermal resistance junction to solder pads (adhesive mount to PCB). RJSP(IS) ......................................... Thermal resistance junction to solder pads (infinite sink mount to PCB). TSP(AM) .......................................... Temperature of solder pads (adhesive mount to PCB). TSP(IS) ............................................ Temperature of solder pads (infinite sink mount to PCB). UA, .............................................. Surface mount case outlines (see figure 2). UB, UBC, UBN, and UBCN .......... Surface mount case outlines (see figure 3). 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-18), figure 2 (UA), figure 3 (UB), figure 4 (JANHC and JANKC version B), figure 5 (JANHC and JANKC version C), and figure 6 (JANHC and JANKC version D) herein. 11 MIL-PRF-19500/255AA w/AMENDMENT 1 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB, UBC, UBN, and UBCN suffix packages. Marking on the UB, UBC, UBN, and UBCN packages shall consist of an abbreviated part number, the date code, and the manufacturer's symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix and the "AUB" suffix can also be omitted. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 12 MIL-PRF-19500/255AA w/AMENDMENT 1 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen Measurement JANS level 2 JANTX and JANTXV levels Optional Optional Required Not applicable Thermal impedance (transient), method 3131 of MIL-STD-750. (see 4.3.3) Required Not applicable Thermal impedance (transient), method 3131 of MIL-STD-750. (2) (see 4.3.3) 4 Required Optional 5 Required Not applicable 8 Required Not required 9 ICBO2, hFE4 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE4; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent ICBO2; hFE4 12 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4 = 15 percent Subgroup 2 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4 = 15 percent 15 Required Not required 16 Required Not required 3a 3b (1) 3c (1) Thermal impedance limits shall not exceed figures 12, 13, 14, 15, and 16. (2) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 13 MIL-PRF-19500/255AA w/AMENDMENT 1 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500 "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval. Method 3100 of MIL-STD-750 to measure TJ shall be used. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where appropriate). The thermal impedance limit shall comply with the thermal impedance graph on figures 12, 13, 14, 15, and 16 (less than or equal to the curve value at the same tH time) and shall be less than the process determined statistical maximum limit as outlined in method 3131 of MIL-STD-750. See table III, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only (table E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is performed in A1 herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein: delta requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with 4.5.3 herein. 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc, adjust device current, or power, to achieve a minimum TJ of +100C. B5 1027 VCB = 10 V dc; PD 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TA or PD to achieve TJ = +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a TJ = +225C minimum. 14 MIL-PRF-19500/255AA w/AMENDMENT 1 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve TJ = +150C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA = +150C, VCB = 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder, or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Delta requirements shall be in accordance with 4.5.3 herein; delta requirements only apply to subgroup C6. 4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E; (not applicable for UA, UB, UBC, UBN, and UBCN devices). C5 3131 RJA and RJC only, as applicable (see 1.3) and in accordance with thermal impedance curves. C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3 n = 45, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 15 MIL-PRF-19500/255AA w/AMENDMENT 1 4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E; not applicable for UA, UB, UBC, UBN, and UBCN devices. C5 3131 RJA and RJC only, as applicable (see 1.3 and 4.3.3) and in accordance with thermal impedance curves. C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include the group D tests specified in table II herein. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to the fluence profile. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Delta measurements shall be in accordance with the applicable steps of 4.5.3. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor shall be omitted. 4.5.3 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method Symbol Limit Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB = 60 V dc ICB02 (1) 100 percent of initial value or 8 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed, see 4.5.1 hFE4 (1) 25 percent change from initial reading. (1) Devices which exceed the table I limits herein for this test shall not be accepted. 16 Unit MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Limit Unit Symbol Method Conditions Min Max Subgroup 1 2/ * Visual and mechanical examination 3/ 2071 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Salt atmosphere (corrosion) 1041 n = 6 devices, c = 0, (For laser marked devices only) Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ 6/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Bond strength 3/ 4/ Table I, subgroup 2 2037 Precondition TA = +250C at t = 24 hours or TA = +300C at t = 2 hours n = 11 wires, c = 0 2075 n = 4 devices, c = 0 Thermal impedance 7/ 3131 See 4.3.3 ZJX Collector to base cutoff current 3036 Bias condition D; VCB = 75 V dc ICBO1 10 A dc Emitter to base cutoff current 3061 Bias condition D; VEB = 6 V dc IEBO1 10 A dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Collector to emitter cutoff current 3041 Bias condition C; VCE = 50 V dc ICES 50 nA dc Collector to base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO2 10 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 10 nA dc Forward-current transfer ratio 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 3076 VCE = 10 V dc; IC = 0.1 mA dc hFE1 Decap internal visual (design verification) 4/ Subgroup 2 C/W 50 30 2N2222A, AL, UA, UB, UBC, UBN, and UBCN 50 See footnotes at end of table. 17 V dc MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Limit Unit Symbol Method Conditions Min Max 35 150 75 325 Subgroup 2 - Continued Forward-current transfer ratio 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 3076 VCE = 10 V dc; IC = 1.0 mA dc hFE2 2N2222A, AL, UA, UB, UBC, UBN, and UBCN Forward-current transfer ratio 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 3076 VCE = 10 V dc; IC = 10 mA dc hFE3 40 2N2222A, AL, UA, UB, UBC, UBN, and UBCN Forward-current transfer ratio 100 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE4 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 40 120 2N2222A, AL, UA, UB, UBC, UBN, and UBCN 100 300 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE5 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 20 2N2222A, AL, UA, UB, UBC, UBN, and UBCN 30 Collector-emitter saturation voltage 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.3 V dc Collector-emitter saturation voltage 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(sat)2 1.0 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(sat)1 1.2 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) 2.0 V dc See footnotes at end of table. 18 VBE(sat)2 0.6 MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Limit Unit Symbol Method Conditions Min Max Subgroup 3 High temperature operation Collector to base cutoff current TA = +150C 3036 Low temperature operation Forward-current transfer ratio Bias condition D; VCB = 60 V dc ICBO3 10 A dc TA = -55C 3076 VCE = 10 V dc; IC = 10 mA dc hFE6 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 15 2N2222A, AL, UA, UB, UBC, UBN, and UBCN 35 Subgroup 4 Small-signal short-circuit forward current transfer ratio 2N2221A, AL, UA, UB, UBC, UBN, and UBCN 2N2222A, AL, UA, UB, UBC, UBN, and UBCN 3206 Magnitude of small-signal short- circuit forward current transfer ratio 3306 VCE = 20 V dc; IC = 20 mA dc; f = 100 MHz |hfe| Open circuit output capacitance Input capacitance (output open-circuited) 3236 Cobo 8 pF Cibo 25 pF Saturated turn-on time VCB = 10 V dc; IE = 0; 100 kHz f 1 MHz VEB = 0.5 V dc; IC = 0; 100 kHz f 1 MHz (See figure 17) ton 35 ns Saturated turn-off time (See figure 18) toff 300 ns VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hfe 30 50 3240 2.5 Subgroups 5 and 6 Not required 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed test in subgroup 1 of table I, double the sample size of the failed test or sequence of tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 6/ This hermetic seal test is an end-point to temp-cycling in addition to electrical measurements. 7/ This test required for the following end-point measurements only: Group B, subgroup 3, 4, and 5 (JANS). Group B, step 1 (TX and TXV). Group C, subgroup 2 and 6. 19 MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE II. Group D inspection. Method MIL-STD-750 Conditions Neutron irradiation 1017 Neutron exposure VCES = 0V Collector to base cutoff current 3036 Bias condition D; VCB = 75 V dc ICBO1 20 A dc Emitter to base cutoff current 3061 Bias condition D; VEB = 6 V dc IEBO1 20 A dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Collector to emitter cutoff current 3041 Bias condition C; VCE = 50 V dc ICES 100 nA dc Collector to base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO2 20 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 20 nA dc Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 VCE = 10 V dc; IC = 0.1 mA dc [hFE1] 5/ Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Collector-emitter saturation voltage 3071 IC = 150 mA dc; IB = 15 mA dc VCE(sat)1 .35 V dc Collector-emitter saturation voltage 3071 IC = 500 mA dc; IB = 50 mA dc VCE(sat)2 1.15 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(sat)1 1.38 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VBE(sat)2 2.3 V dc Inspection 1/ 2/ 3/ Limit Symbol Min Unit Max Subgroup 1 4/ 50 V dc [15] [25] VCE = 10 V dc; IC = 1.0 mA dc [hFE2] 5/ [17.5] [37.5] VCE = 10 V dc; IC = 10 mA dc 150 325 [hFE3] 5/ [20] [50] VCE = 10 V dc; IC = 150 mA dc [hFE4] 5/ [20] [50] VCE = 10 V dc; IC = 500 mA dc 120 300 [hFE5] 5/ [10] [15] See footnotes at end of table. 20 0.6 MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE II. Group D inspection - Continued. Inspection 1/ 2/ 3/ Method MIL-STD-750 Conditions Limit Symbol Min Unit Max Subgroup 2 Total dose irradiation 1019 Gamma exposure VCES = 40 V Condition A Collector to base cutoff current 3036 Bias condition D; VCB = 75 V dc ICBO1 20 A dc Emitter to base cutoff current 3061 Bias condition D; VEB = 6 V dc IEBO1 20 A dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Collector to emitter cutoff current 3041 Bias condition C; VCE = 50 V dc ICES 100 nA dc Collector to base cutoff current 3036 Bias condition D; VCB = 60 V dc ICBO2 20 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 20 nA dc Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 VCE = 10 V dc; IC = 0.1 mA dc [hFE1] 5/ Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Forward-current transfer ratio M through H2N2221A M through H2N2222A 3076 Collector-emitter saturation voltage 3071 IC = 150 mA dc; IB = 15 mA dc VCE(sat)1 .35 V dc Collector-emitter saturation voltage 3071 IC = 500 mA dc; IB = 50 mA dc VCE(sat)2 1.15 V dc 50 V dc [15] [25] VCE = 10 V dc; IC = 1.0 mA dc [hFE2] 5/ [17.5] [37.5] VCE = 10 V dc; IC = 10 mA dc 150 325 [hFE3] 5/ [20] [50] VCE = 10 V dc; IC = 150 mA dc [hFE4] 5/ [20] [50] VCE = 10 V dc; IC = 500 mA dc 120 300 [hFE5] 5/ [10] [15] See footnotes at end of table. 21 MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE II. Group D inspection - Continued. MIL-STD-750 Inspection 1/ 2/ 3/ Limit Unit Symbol Method Conditions Base-emitter saturation voltage 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(sat)1 Base-emitter saturation voltage 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VBE(sat)2 Min Max 0.6 1.38 V dc 2.3 V dc Subgroup 2 - Continued 1/ Tests to be performed on all devices receiving radiation exposure. 2/ For sampling plan, see MIL-PRF-19500. 3/ Electrical characteristics apply to the corresponding AL, UA, UB, UBC, UBN, and UBCN suffix versions unless otherwise noted. 4/ See 6.2.g herein. 5/ See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the preand Post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. 22 MIL-PRF-19500/255AA w/AMENDMENT 1 TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only. MIL-STD-750 Inspection Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See table I, subgroup 2 and 4.5.3 herein Subgroup 2 Intermittent life 1037 Electrical measurements Intermittent operation life: VCB = 10 V dc, 6,000 cycles. Adjust device current, or power, to achieve a minimum TJ of +100C 45 devices c=0 See table I, subgroup 2 and 4.5.3 herein Subgroup 4 Thermal resistance 3131 Thermal impedance curves RJSP(IS) can be calculated but shall be measured once in the same package with a similar die size to confirm calculations (may apply to multiple specification sheets) RJSP(AM) need be calculated only 15 devices, c=0 See MIL-PRF-19500, table E-IX, group E, subgroup 4 Sample size N/A Subgroup 5 Not applicable Subgroup 6 Electrostatic discharge (ESD) 1020 Subgroup 8 Reverse stability 45 devices c=0 1033 Condition B 23 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperature (TJ 200C) and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ 150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ 125C, and 110C to show power rating where most users want to limit TJ in their application. FIGURE 7. Temperature-power derating for 2N2221A, 2N2221AL, 2N2222A, and 2N2222AL (TO-18 package). 24 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 8. Temperature-power derating for 2N2221A, 2N2221AL, 2N2222A, and 2N2222AL (TO-18 package case base mounted). 25 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 9. Temperature-power derating for 2N2221AUA and 2N2222AUA. 26 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 10. Temperature-power derating for 2N2221AUA and 2N2222AUA. 27 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 11. Temperature-power derating curve for 2N2221AUB and UBN and 2N2222AUB and UBCN. 28 MIL-PRF-19500/255AA w/AMENDMENT 1 Maximum Thermal Impedance 2N2221A and 2N2222A T0-18 package with 0.125" lead mount Theta (C/W) 1000 100 10 1 0.000001 0.00001 0.0001 0.001 0.01 Time (s) 0.1 1 10 100 1000 FIGURE 12. Thermal impedance graph (RJA) for 2N2221A, 2N2221AL, 2N2222A, and 2N2222AL (TO-18). 29 MIL-PRF-19500/255AA w/AMENDMENT 1 Maximum Thermal Impedance 2N2221A and 2N2222A T0-18 package with case base in copper heat sink Theta (C/W) 1000 100 10 1 0.000001 0.00001 0.0001 0.001 Time (s) 0.01 0.1 1 10 FIGURE 13. Thermal impedance graph (RJC) for 2N2221A, 2N2221AL, 2N2222A, and 2N2222AL (TO-18). 30 MIL-PRF-19500/255AA w/AMENDMENT 1 Maximum Thermal Impedance 2N2221AUA and 2N2222AUA 4 points solder pad (adhesive mount to PCB) Theta (C/W) 100 10 1 0.000001 0.00001 0.001 0.0001 Time (s) 0.01 0.1 FIGURE 14. Thermal impedance graph (RJSP(AM)) for 2N2221AUA and 2N2222AUA. 31 1 MIL-PRF-19500/255AA w/AMENDMENT 1 Maximum Thermal Impedance 2N2221AUA and 2N2222AUA 4 points solder pads (infinite sink mount to PCB) 1000 Theta (C/W) 100 10 1 0.000001 0.00001 0.0001 0.001 Time (s) 0.01 0.1 1 FIGURE 15. Thermal impedance graph (RJSP(IS)) for 2N2221AUA and 2N2222AUA. 32 10 MIL-PRF-19500/255AA w/AMENDMENT 1 Maximum Thermal Impedance 2N2221AUB and 2N2222AUB 3 points solder pad (infinite sink mount) to PCB 1000 Theta (C/W) 100 10 1 0.000001 0.00001 0.0001 0.001 Time (s) 0.01 0.1 1 FIGURE 16. Thermal impedance graph (RJSP(IS)) for 2N2221AUB and UBN and 2N2222AUB and UBCN. 33 10 MIL-PRF-19500/255AA w/AMENDMENT 1 NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50 . 2. Sampling oscilloscope: ZIN 100 k, CIN 12 pF, rise time 5 ns. FIGURE 17. Saturated turn-on switching time test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50 . 2. Sampling oscilloscope: ZIN 100 k, CIN 12 pF, rise time 5 ns. 3. Alternate test point for high impedance attenuating probe. FIGURE 18. Saturated turn-off switching time test circuit. 34 MIL-PRF-19500/255AA w/AMENDMENT 1 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. e. For die acquisition, the JANHC or JANKC letter version shall be specified (see figures 4, 5, and 6) as well as the RHA designer, if applicable. The JANHCA/JANKCA die version is obsolete as of the date of this revision. Other letter versions should be used. f. Surface mount designation if applicable. g. For acquisition of RHA designated devices, table II, subgroup 1 testing of group D herein is optional. If subgroup 1 is desired, it must be specified in the contract. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.dla.mil. 6.4 Supersession data. Devices covered by this specification supersede the manufacturers' and users' Part or Identifying Number (PIN). The term PIN is equivalent to the term part number which was previously used in this specification. This information in no way implies that manufacturers' PIN's are suitable as a substitute for the military PIN. 35 MIL-PRF-19500/255AA w/AMENDMENT 1 6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCB2N2221A) will be identified on the QML. The JANHCA/JANKCA die version is obsolete as of the date of this revision. Die ordering information (1) PIN 2N2221A 2N2222A Manufacturer 43611 34156 52GC4 JANHCB2N2221A JANHCB2N2222A JANHCC2N2221A JANHCC2N2222A JANHCD2N2221A JANHCD2N2222A (1) For JANKC level, replace JANHC with JANKC. 6.6 PIN construction example. 6.6.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form. JANS M 2N 2221 AUB JAN certification mark and quality level (see 1.5.1.1) RHA designator (see 1.5.2) First number and first letter symbols (see 1.5.3.1) Second number symbols (see 1.5.3.2) Suffix symbol (see 1.5.4) 6.6.2 Unencapsulated devices. The PINs for un-encapsulated devices are constructed using the following form. JANHC JAN certification mark and quality level (see 1.5.1.2) Die identifier for unencapsulated devices (see 1.5.6) RHA designator (see 1.5.2) First number and first letter symbols (see 1.5.3.1) Second number symbols (see 1.5.3.2) Suffix symbol (see 1.5.4) 36 B M 2N 2221 A MIL-PRF-19500/255AA w/AMENDMENT 1 6.7 List of PINs. 6.7.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on this specification sheet. PINs for type 2N2221A and 2N2222A. JAN2N2221A JANTX2N2221A JANTXV#2N2221A JANS#2N2221A JAN2N2222A JANTX2N2222A JANTXV#2N2222A JANS#2N2222A JAN2N2221AL JANTX2N2221AL JANTXV#2N2221AL JANS#2N2221AL JAN2N2222AL JANTX2N2222AL JANTXV#2N2222AL JANS#2N2222AL JAN2N2221AUA JANTX2N2221AUA JANTXV#2N2221AUA JANS#2N2221AUA JAN2N2222AUA JANTX2N2222AUA JANTXV#2N2222AUA JANS#2N2222AUA JAN2N2221AUB JANTX2N2221AUB JANTXV#2N2221AUB JANS#2N2221AUB JAN2N2222AUB JANTX2N2222AUB JANTXV#2N2222AUB JANS#2N2222AUB JAN2N2221AUBC JANTX2N2221AUBC JANTXV#2N2221AUBC JANS#2N2221AUBC JAN2N2222AUBC JANTX2N2222AUBC JANTXV#2N2222AUBC JANS#2N2222AUBC JAN2N2221AUBN JANTX2N2221AUBN JANTXV#2N2221AUBN JANS#2N2221AUBN JAN2N2222AUBN JANTX2N2222AUBN JANTXV#2N2222AUBN JANS#2N2222AUBN JAN2N2221AUBCN JANTX2N2221AUBCN JANTXV#2N2221AUBCN JANS#2N2221AUBCN JAN2N2222AUBCN JANTX2N2222AUBCN JANTXV#2N2222AUBCN JANS#2N2222AUBCN (1) The number sign (#) represent one of eight RHA designators available (M, D, P, L, R, F, G, or H). The PIN is also available without a RHA designator. 6.7.2 PINs for unencapsulated devices (die). The following is a list of possible PINs for unencapsulated devices available on this specification sheet. Quality level HC Quality level KC JANHCB#2N2221A JANKCB#2N2221A JANHCB#2N2222A JANKCB#2N2222A JANHCC#2N2221A JANKCC#2N2221A JANHCC#2N2222A JANKCC#2N2222A JANHCD#2N2221A JANKCD#2N2221A JANHCD#2N2222A JANKCD#2N2222A (1) The number sign (#) represents one of eight RHA designators available (M, D, P, L, R, F, G, or H). The PIN is also available without a RHA designator. 6.8 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the previous issue. 37 MIL-PRF-19500/255AA w/AMENDMENT 1 Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2016-039) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 71, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil. 38