FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
Publication Order Number:
FFB3904/D
© 1998 Semiconductor Components Industries, LLC.
December-2017, Rev. 31
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
Block Diagram
Figure 1. FFB3904 Device Package Figure 2. FFB3904 Internal Connection
Figure 3. FMB3904 Device Package Figure 4. FMB3904 Internal Connection
Figure 5. MMPQ3904 Device Package Figure 6. MMPQ3904 Internal Con nection
C1
B2
E2
E1
B1
C2
pin #1
SC70-6
Mark: .1A
E2
B2
C1
C2
B1
E1
SuperSOT™-6
Mark: .1A
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
C2
E1
C1
B2
E2
B1
SOIC-16
Mark: MMPQ3904
C1C1C2C2C3C3C4
C4
E1 B1 E2 B2E3 B3E4 B4
pin #1
B4E4B3E3B2E2B1E1
C4C4C3C3C2C2C1C1
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100 mA
as a switch and to 100 MHz as an amplifier. Sourced
from Process 23.
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape
can be of either orientation (0 deg and 180 deg) and will not affect the functionality of the device.
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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2
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. ON
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB3904 .1A SC70 6L Tape and Reel
FMB3904 .1A SSOT 6L Tape and Reel
MMPQ3904 MMPQ3904 SOIC 16L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
FFB3904 FMB3904 MMPQ3904
PD
Total Device Dissipation 300 700 1,000 mW
Derate above 25°C2.45.68.0mW/°C
RθJA
Thermal Resistance, Junction to Ambient 415 180
°C/W
Thermal Resistance, Junction to Ambient,
Effective 4 Die 125
Thermal Resistance, Junction to Ambient,
Each Die 240
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
IBL Base Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
ICEX Collector Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
On Characteristics(3)
hFE DC Current Gain
FFB3904, FMB3904 IC = 0.1 mA, VCE = 1.0 V 40
MMPQ3904 30
FFB3904, FMB3904 IC = 1.0 mA, VCE = 1.0 V 70
MMPQ3904 50
FFB3904, FMB3904 IC = 10 mA, VCE = 1.0 V 100 300
MMPQ3904 75
All Devices IC = 50 mA, VCE = 1.0 V 60
All Devices IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95
Small-Signal Characteristics (MMPQ3904 only)
fTCurrent Gain-Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cob Output Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 4.0 pF
Cib Input Capacitance VBE = 0.5 V, IC = 0,
f = 140 kHz 8.0 pF
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature Figure 12. Capacitance vs. Rever se Bias Voltage
0. 1 1 10 1 00
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 °C
125 °C
- 40 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
f = 1.0 MHz
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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Typical Performance Characteristics (Continued)
Figure 13. Noise Figu re vs. Frequency Figure 14. Noise Figure vs. Source Resistance
Figure 15. Current Gain and Phase An gle vs.
Frequency Figure 16. Power Dissipation vs.
Ambient Temperature
Figure 17. Turn-On Time vs. Collector Current Figure 18. Rise Time vs. Collector Current
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 100 μA, R = 500 Ω
CS
I = 1.0 mA
R = 200Ω
C
S
I = 50 μA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩΩ
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 μA
C
I = 1.0 mA
C
S
I = 50 μA
C
I = 5.0 mA
C
θθ - DEGREES
0
40
60
80
100
120
140
160
20
180
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
0 25 50 75 100 125 150
0
0.2 5
0.5
0.7 5
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2
Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2
Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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Typical Performance Characteristics (Continued)
Figure 19. Storage Time vs. Collector Current Figure 20. Fa ll Time vs. Collector Current
Figure 21. Current Gain Figure 22. Outpu t Admi tta nce
Figure 23. Input Impedance Figure 24. Voltage Feedback Ratio
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2
Ic
10
S
T = 125°C
T = 25°C
J
J
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2
Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A o
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1. 0 kH z
T = 25 C
A o
μ
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
0. 1 1 1 0
1
2
3
4
5
7
10
I - COLLE CTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RATIO (x10 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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7
Physical Dimensions
Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
SC70 6L
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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Physical Dimensions (Continued)
Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
SSOT 6L
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
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Physical Dimensions (Continued)
Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)
X 45°
DETAIL A
SCALE: 2:1
8°
0°
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AC, ISSUE C.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH AND TIE BAR PROTRUSIONS
D) CONFORMS TO ASME Y14.5M-1994
E) LANDPATTERN STANDARD: SOIC127P600X175-16AM
F) DRAWING FILE NAME: M16AREV12.
SEATING PLANE
GAGE PLANE
C
C0.10
SEE DETAIL A
LAND PATTERN RECOMMENDATION
PIN ONE
INDICATOR
1
16
8
M
0.25
9
CBA
B
A
5.6
1.27 0.65
1.75
10.00
9.80
8.89
6.00
1.27
(0.30)
0.51
0.35
1.75 MAX
1.50
1.25
0.25
0.10
0.25
0.19
(1.04)
0.90
0.50
0.36
(R0.10)
(R0.10)
0.50
0.25
4.00
3.80
SO 16L NB
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