12E D i 6367254 o08saqo0 7 i MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 32 Vv Collector-Base Voltage Vcgo 32 v Emitter-Base Voltage VEBO 5.0 Vv Collector Current Continuous Ic 100 mAdc THERMAL CHARACTERISTICS . . Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C Derate above 25C 1.8 mwrc Thermal Resistance Junction to Ambient RaJA 556 CAV Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWFC Thermal Resistance Junction to Ambient RaJa 417 CW Junction and Storage Temperature Ty. Tstg_| 55 to +150 c *FR-S = 1.0 x 0.76 x 0,062 In, **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING | BCWEOAL = AA; BCW60BL = AB; BCW6E0CL = AC; BCW60DL = AD MOTORGLA SC XSTRS/R F CASE 318-03, STYLE 6 | SOT-23 (TO-236AB) 3 Collector ye 2 Emitter _GENERAL PURPOSE TRANSISTORS NPN SILICON BCW6O0AL, BL, CL, DL TH a'7-OF ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer te MPS3904 for graphs. Characteristic | Symbo! | Min [ Max Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage ViBR}CEO 32 _ Vde {Ic = 2.0 mAde, Ig = 0) Emitter-Base Breakdown Voltage ViBRIEBO 5.0 _ Vde (IE = 1.0 pAde, Ic = 0) Collector Cutoff Current Ices (Vee = 32 Vde) _ 20 nAdc (Vcge = 32 Vde, Ta = 150C) - 20 BAdc Emitter Cutoff Currant leBo _ 20 nAdc (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain hee _ (Ic = 10 pAde, VcE = 5.0 Vde) BCW60AL 20 _- BCW60BL 30 _ BCWeccL 40 _ BCW6ODL 100 _ (Ic = 2.0 mAde, Vcg = 5.0 Vdc) BCWE60AL 120 220 BCW6OBL 175 310 BCWeEOCL 250 460 BCW6O0DL 380 630 (Ic = 50 mAdc, Vcg = 1.0 Vde) BCWE6O0AL 60 _ BCW60BL 70 ~_ BCWSs0CL 90 - BCWEODL 100 =~ AC Current Gain hfe _- (Ic = 2.0 mAdc, Voge = 5.0 Vde, f = 1.0 kHz) BCW60AL 125 250 BCW6OBL 175 350 BCWEOCL 250 500 BCW6ODL 350 700 Collector-Emitter Saturation Voltage VCE(sat) Vde (I = 60 mAdc, Ig = 1.25 mAde) _ 0.55 (ic = 10 mAde, Ig = 0.26 mAdc) _- 0.35 Base-Emitter Saturation Voltage VBE(sat) Vde (Ig = 50 mAde, Ip = 1.25 mAdc) 0.7 1.05 (Ic = 50 mAde, Ig = 0.25 mAdc) 0.6 0.85 Base-Emitter On Voltage VBE{on) 0.6 0.75 Vde (lc = 2.0 mAde, Voce = 5.0 Vdc) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-135 omnia MOTORCLA SC XSTRS/R F 126 D i ba67254 008585) af BCWG6SOAL, BL, CL, DL TH 7-0 9 see] ELECTRICAL CHARACTERISTICS (continued) (Ta = 26C unless otherwise noted.) | Characteristic | symbot [| Min | Max | Unit | SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr 125 _ MHz (I = 10 mAde, Vee = 5.0 Vde, f = 1.0 MHz) Output Capacitance : Cobo _ 45 pF (Vce = 10 Vdc, Il = 0, f = 1.0 MHz) - Noise Figure NF _ 6.0 dB (lc = 0.2 mAdc, Vce = 5.0 Vde, Rg = 2.0 kf, f = 1,0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn-On Time ton _ 150 ns {l = 10 mAde, Ig1 = 1.0 mAdc) Turn-Off Time toff _ 800 ns (Ig2 = 1,0 mAdc, Vgg = 3.6 Vde, Ry = Ro = 5,0 kn, Rp = 990 9) - MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-136