NEC / PNP SILICON POWER TRANSISTOR | 2SB772 DESCRIPTION The 2SB772 is PNP silicon transistor suited for. the output stage of 3 watts audio amplifier, voltage regulator, DC-DC con- PACKAGE DIMENSIONS verter and relay driver. in millimeters (inches) 8.5 MAX. (0.334 MAX.) "28 MAX. (0.110 MAX.) 3.2 0.2(6 0.126) 1 | FEATURES Low saturation voltage. 2 Vee teat) S0.5 V (@ Ie = 2 A, Ip = 0.2 A) 3 4-47 Excellent hee linearity and high hee. a} * 2 hee : 60 to 400 (@ Veg = -2V, Ic =-1 A) # Sle Less cramping space required due to small and thin package NS and reducing the trouble for attachment to a radiator. i No insulator bushing required. 1.2 a= > (0.047) z = x ABSOLUTE MAXIMUM RATINGS | | | 3 Maximum Temperatures : 0.84298 HH Hg Storage Temperature ...........--- 55 to +150 C | (0.031) T Junction Temperature ..........-- 150 C Maximum 2.3/2.3 Maximum Power Dissipations (0.090)] (0.090) Total Power Dissipation (Tg =25C) ......--. 1.0 W ee Total Power Dissipation (Tg = 25C) ......-44- 10W Maximum Voltages and Currents (Tg = 25 C) Voso Collector to Base Voltage .......- 40 V 1, Emitter Vceo Collector to Emitter Voitage..... 30 V_ | 2: Collector connected to mounting plane Veso Emitter to Base Voltage ........ -5.0 V Icipc) Collector Current (DC) ........ 3.0 A Ic(putse) Collector Current (pulse) ....... -7.0 A *Pulse Test PWS 350 us, Duty Cycle < 2 % ELECTRICAL CHARACTERISTICS (Tg = 25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee DC Current Gain 30 220 Vce = 2.0 V, Ic = 20 mA** hre2 DC Current Gain 60 160 400 Vee =-2.0 V, Iq =1.0 A** fr Gain Bandwidth Product. 80 MHz VceE=5.0V, Io =~-O.1A Cob Output Capacitance 55 pF Vop = 10 V, le = 0, f = 1.0 MHz IcBo Collector Cutoff.Current 1.0 uA Vop=30V,tg=90 lego Emitter Cutoff Current -~1.0 uA Veg =3.0V,Ic=0 VCE (sat) Collector Saturation Voltage 0.3 0.5 Vv Ic = 2.0A, lg=0.2A** VBE(sat} Base Saturation Voltage 1.0 2.0 v Ic = 2.0 A, Ip = 0.2 A** **Pulse Test : PWS 350 ws, Duty Cycle 52% Classification of hre Rank R Qa P E Range 60 to 120 | 100 to 200 | 160 10320 | 200 to 400 Test Conditions : Vcg = -2.0V, Ic =1.04A 212 NEC 2SB772 VBE(sat)~ Base Saturation VoltageV TYPICAL CHARACTERISTICS (T= 25 C) TOTAL POWER DISSIPATION vs. AMBINET TEMPERATURE Note: 1. Aluminum heat sink of 1.0 mm thickness. 2. With no isolator film. 3. Within silicon compound. fy oS ao oO 2 > ng & Sy CF tp fy) J %y P+Total Power Dissipation W a o 50 100 150 Ta-Ambient Temperature C SAFE OPERATING AREAS MAX. = 550 ys ve -0.1 ICollector CurrentA 1.7.=25 *C 0.03} 2. Curves must be derated linearly with increase of and ~3 -6-10 ~ 30 60-10 VceECollector to Emitter VoltageV ~0.01! BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT -1 Ic=10-lg - Pulse Test { ~Collector Saturation VoltageV 0.001 -0,003-0.01-0.03 -01 ~03 -1 -3 -10 Ic Collector CurrentA VCE(sat) xe DERATING CURVES FOR ALL TYPES g | ] { : | 100 3 B 80 os 67 s ' Sing = 60 a, ee i 3 ey, i> ; s 40 Non 5 %) $ 26 i @ a I 5 0 50 100 150 Te~Case Temperature "C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Pulse Test i I S Igp=1 mA I Collector Current~A 0 _ -8 - -16 -20 VceCollector to Emitter VoltageV GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT rary VcE=5.0 V Forced air cooling (with heat sink) i Gain Bandwidth Product -MHz fT -0.03 -0.1 - - ICollector Current A Cjpinput Capacitance pF THERMAL RESISTANCE vs. PULSE WIDTH VoceE=-10V Ic=-10A 30] Duty=0.001 - ARthThermal Resistance"C/W - PW-Pulse Widthms OC CURRENT GAIN, BASE TO EMITTER VOLTAGE vs. COLLECTOR CURRENT Voce =2.0 Pulse Test rary ay - heeDC Current Gain w Var Base to Emitter VoltageV 01 -03 -1 ~-3 ICollector CurrentA -10 INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE : f=10 MHz IE =0(Cob) 'e=0(Cip) roy Cop Output Capacitance pF - - -10 - -60 VcopCollector to Base VoltageV VepEmitter to Base VoltageV 213