NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 Vero Ic hyp@ I(/ Vee Vest) PACKAGE | DEVICE | (sus) | (max) | (min/max @ Ic/lp Py* fr TYPE | VOLTS | AMPS] @A/V) (V@A/A) | WATTS | (MHz) NPN 2N1487 40 6 | 15-45@1.5/4 | 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 | 15-45@1.5/4 | 3@1.5/.3 75 1.0 2N1489 40 6 | 25-75@1.5/4 | 1@1.5/.1 75 1.0 2N1490 55 6 | 25-75@1.5/4 | 1@1.5/.1 75 1.0 2N3055 60 15 | 20-70@4/4 1.1@4/.4 115 2.5 2N3713 60 10 | 25-90@1/2 1@5/.5 150 2.5 2N3714 80 10 | 25-90@1/2 1@5/.5 150 2.5 2N3715 60 10 | s50-150@1/2 | .8@5/.5 150 2.5 2N3716 80 10 | 50-150@1/2 | .8@5/.5 150 2.5 2N3771 40 30 | 15-60@15/4 | 2@15/1.5 150 0.2 2N3772 60 20 | 15-60@10/4 | 1.4@10/1 150 0.2 2N3773 140 16 | 15-60@8/4 1.4@8/.8 150 0.2 2N4070 100 10 | 40-120@5/5 | .6@5/.5 115 20 2N4071 150 10 | 40-120@5/5 | .6@5/.5 115 20 2N5038 90 20 | 20-100@12/5 | 1@12/1.2 140 60' 2N5039 75 20 | 20-100@10/5 | 1@10/1 140 60' 2NS671 90 30 | 20-100@15/2 | .75@15/1.2 140 50 2N5672 120 30 | 20-100@15/2 } .75@15/1.2 140 50 2N5685 60 50 | 15-60@25/2 | 1@25/2.5 300 2 2N5686 80 50 | 15-60@25/2 | 1@25/2.5 300 2 2N5929 80 30 | 20-100@10/4_| 2@10/.66 175 30 2N5930 120 30 | 20-100@10/4 | 2@10/.66 175 30 2N5931 160 30 | 20-100@10/4 | 2@10/.66 175 30 *T.=25C h Veer Typical