© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 9
1Publication Order Number:
MSD601−RT1/D
MSD601-RT1, MSD601-ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector − Base Voltage V(BR)CBO 60 Vdc
Collector − Emitter Voltage V(BR)CEO 50 Vdc
Emitter − Base Voltage V(BR)EBO 7.0 Vdc
Collector Current − Continuous IC100 mAdc
Collector Current − Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation PD200 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 ~ +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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Preferred devices are recommended choices for future use
and best overall value.
SC−59
CASE 318D
MARKING
DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
Yx M G
G
x = R for RT1
S for ST1
M = Date Code
G=Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
MSD601−RT1, MSD601−ST1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Min Max Unit
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO 50 −Vdc
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO 60 −Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 7.0 −Vdc
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO −0.1 mAdc
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO −100 nAdc
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601−RT1
MSD601−ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
hFE1
hFE2
210
290
90
340
460
−
−
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat) −0.5 Vdc
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device Package Shipping†
MSD−601RT1 SC−59 3000 / Tape & Reel
MSD−601RT1G SC−59
(Pb−Free)
3000 / Tape & Reel
MSD−601ST1 SC−59 3000 / Tape & Reel
MSD−601ST1G SC−59
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MSD601−RT1, MSD601−ST1
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3
PACKAGE DIMENSIONS
SC*59
CASE 318D*
04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 SCALE 10:1
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
ǒmm
inchesǓ
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MSD601−RT1/D
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