Vishay General Semiconductor
P4KE6.8 thru P4KE540A
Document Number 88365
07-Jun-06
www.vishay.com
1
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in Unidirectional and Bidirectional
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AL (DO-41)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirection use C or CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional 6.8 V to 540 V
V(BR) Bidirectional 6.8 V to 440 V
PPPM 400 W
PD1.0 W
IFSM (Unidirectional only) 40 A
Tj max. 175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for P4KE220(A) & below; VF = 5.0 V for P4KE250(A) & above
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Peak power dissipation with a 10/1000 µs waveform (1) (Fig. 1) PPPM 400 W
Peak pulse current with a 10/1000 µs waveform (1) I
PPM see next table A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) PD 1.0 W
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2) I
FSM 40 A
Maximum instantaneous forward voltage at 25 A for unidirectional only (3) V
F 3.5/5.0 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
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Document Number 88365
07-Jun-06
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V(BR) AT IT(1)
(V)
TEST
CURRENT
IT (mA)
STAND-
OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V(BR)
(%/°C)
MIN MAX
P4KE6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.057
P4KE6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.057
P4KE7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.061
P4KE7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.061
P4KE8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.065
P4KE8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.06
P4KE9.1 8.19 10.0 1.0 7.37 50 29.0 13.8 0.068
P4KE9.1A 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068
P4KE10 9.00 11.0 1.0 8.10 10 26.7 15.0 0.073
P4KE10A 9.50 10.5 1.0 8.55 10 27.6 14.5 0.073
P4KE11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.075
P4KE11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075
P4KE12 10.8 13.2 1.0 9.72 1.0 23.1 17.3 0.076
P4KE12A 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078
P4KE13 11.7 14.3 1.0 10.5 1.0 21.1 19.0 0.081
P4KE13A 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081
P4KE15 13.5 16.5 1.0 12.1 1.0 18.2 22.0 0.084
P4KE15A 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084
P4KE16 14.4 17.6 1.0 12.9 1.0 17.0 23.5 0.086
P4KE16A 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086
P4KE18 16.2 19.8 1.0 14.5 1.0 15.1 26.5 0.088
P4KE18A 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088
P4KE20 18.0 22.0 1.0 16.2 1.0 13.7 29.1 0.090
P4KE20A 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090
P4KE22 19.8 24.2 1.0 17.8 1.0 12.5 31.9 0.092
P4KE22A 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092
P4KE24 21.6 26.4 1.0 19.4 1.0 11.5 34.7 0.094
P4KE24A 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094
P4KE27 24.3 29.7 1.0 21.8 1.0 10.2 39.1 0.096
P4KE27A 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096
P4KE30 27.0 33.0 1.0 24.3 1.0 9.2 43.5 0.097
P4KE30A 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097
P4KE33 29.7 36.3 1.0 26.8 1.0 8.4 47.7 0.098
P4KE33A 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098
P4KE36 32.4 39.6 1.0 29.1 1.0 7.7 52.0 0.099
P4KE36A 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099
P4KE39 35.1 42.9 1.0 31.6 1.0 7.1 56.4 0.100
P4KE39A 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100
P4KE43 38.7 47.3 1.0 34.8 1.0 6.5 61.9 0.101
P4KE43A 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101
P4KE47 42.3 51.7 1.0 38.1 1.0 5.9 67.8 0.101
P4KE47A 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101
P4KE51 45.9 56.1 1.0 41.3 1.0 5.4 73.5 0.102
P4KE51A 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102
P4KE56 50.4 61.6 1.0 45.4 1.0 5.0 80.5 0.103
P4KE56A 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103
P4KE62 55.8 68.2 1.0 50.2 1.0 4.5 89.0 0.104
P4KE62A 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104
P4KE68 61.2 74.8 1.0 55.1 1.0 4.1 98.0 0.104
P4KE68A 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104
P4KE75 67.5 82.5 1.0 60.7 1.0 3.7 108 0.105
Document Number 88365
07-Jun-06
www.vishay.com
3
P4KE6.8 thru P4KE540A
Vishay General Semiconductor
Note:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) For bidirectional types having VWM of 10 volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
P4KE75A 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105
P4KE82 73.8 90.2 1.0 66.4 1.0 3.4 118 0.105
P4KE82A 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105
P4KE91 81.9 100 1.0 73.7 1.0 3.1 131 0.106
P4KE91A 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106
P4KE100 90.0 110 1.0 81.0 1.0 2.8 144 0.106
P4KE100A 95.0 105 1.0 85.5 1.0 2.9 137 0.106
P4KE110 99.0 121 1.0 89.2 1.0 2.5 158 0.107
P4KE110A 105 116 1.0 94.0 1.0 2.6 152 0.107
P4KE120 108 132 1.0 97.2 1.0 2.3 173 0.107
P4KE120A 114 126 1.0 102 1.0 2.4 165 0.107
P4KE130 117 143 1.0 105 1.0 2.1 187 0.107
P4KE130A 124 137 1.0 111 1.0 2.2 179 0.107
P4KE150 135 165 1.0 121 1.0 1.9 215 0.108
P4KE150A 143 158 1.0 128 1.0 1.9 207 0.108
P4KE160 144 176 1.0 130 1.0 1.7 230 0.108
P4KE160A 152 168 1.0 136 1.0 1.8 219 0.108
P4KE170 153 187 1.0 138 1.0 1.6 244 0.108
P4KE170A 162 179 1.0 145 1.0 1.7 234 0.108
P4KE180 162 198 1.0 146 1.0 1.6 258 0.108
P4KE180A 171 189 1.0 154 1.0 1.6 246 0.108
P4KE200 180 220 1.0 162 1.0 1.4 287 0.108
P4KE200A 190 210 1.0 171 1.0 1.5 274 0.108
P4KE220 198 242 1.0 175 1.0 1.2 344 0.108
P4KE220A 209 231 1.0 185 1.0 1.2 328 0.108
P4KE250 225 275 1.0 202 1.0 1.1 360 0.110
P4KE250A 237 263 1.0 214 1.0 1.2 344 0.110
P4KE300 270 330 1.0 243 1.0 0.93 430 0.110
P4KE300A 285 315 1.0 256 1.0 1.0 414 0.110
P4KE350 315 385 1.0 284 1.0 0.79 504 0.110
P4KE350A 333 368 1.0 300 1.0 0.83 482 0.110
P4KE400 360 440 1.0 324 1.0 0.70 574 0.110
P4KE400A 380 420 1.0 342 1.0 0.73 548 0.110
P4KE440 396 484 1.0 356 1.0 0.63 631 0.110
P4KE440A 418 462 1.0 376 1.0 0.66 602 0.110
P4KE480 432 528 1.0 389 1.0 0.58 686 0.110
P4KE480A 456 504 1.0 408 1.0 0.61 658 0.110
P4KE510 459 561 1.0 413 1.0 0.55 729 0.110
P4KE510A 485 535 1.0 434 1.0 0.57 698 0.110
P4KE540 486 594 1.0 437 1.0 0.52 772 0.110
P4KE540A 513 567 1.0 459 1.0 0.54 740 0.110
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE
V(BR) AT IT(1)
(V)
TEST
CURRENT
IT (mA)
STAND-
OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3) (µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V(BR)
(%/°C)
MIN MAX
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Document Number 88365
07-Jun-06
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Typical thermal resistance junction-to-lead RθJL 60 °C/W
Typical thermal resistance junction-to-ambient, LLead = 10 mm RθJA 100 °C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
P4KE6.8A-E3/54 0.350 54 4000 13" Diameter Paper Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
100
10
1
0.1
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
P
PPM
, Peak Pulse Power (kW)
td, Pulse Width
100
75
50
25
0
0 25 50 75 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance Uni-Directional
01.0 2.0 3.0 4.0
0
50
100
150
td
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
tr = 10 µsec.
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 µsec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
10000
1.0 10 100 200
Measured at
Zero Bias
Measured at Stand-off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
C
J
, Junction Capacitance (pF)
V(BR) - Breakdown Voltage (V)
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
Document Number 88365
07-Jun-06
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Power Derating Curve
Figure 6. Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
L = 0.375" (9.5 mm)
Lead Lengths
P
D
, Power Dissipation (W)
T
L
- Lead Temperature (°C)
60 Hz
Resistive or
Inductive Load
1.00
0.75
0.50
0.25
0
0 25 50 75 100 125 150 175 200
1 5 10 50 100
10
50
100
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Figure 7. Typical Reverse Leakage Characteristics
Figure 8. Typical Transient Thermal Impedance
0.01
0.1
1
10
100
0100 200 300 400 500 600
Measured at Devices
Stand-off Voltage VWM
TA = 25 °C
Instantaneous Reverse Leakage
Current (µA)
V(BR) - Breakdown Voltage (V)
10
100
1
0.001 0.01 0.1 1 10 100 1000
t - Pulse Duration (sec.)
Transient Thermal Impedance (°C/W)
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028(0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
DO-204AL (DO-41)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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