Optoelectronic devices Coupling devices Type Fig. Maximum ratings Characteristics Nr. r Emitter Receiver tr tt Tr Py) Io UcEO Py) Vis kK at Ip at Jp=10mA mA mw mA Vv mw Vv mA us ys CNY 18 38. 60 100 150 32 150 500 > 0,25 10 1,6 1,7 CNY 21 39 50 120 50 32 4130 10.000 0,5 10 1,6 1,7 CNY 24 40 50 120 50 32 130 10.000 1,0 30 1,6 1,7 CNY 36 7) 42 60 100 100 32 150 ~ 0,04 20 2,5 3,3 CNY 37) 43 60 100 100 32 150 - 0,04 20 2,5 3,3 cay so 41 60 100 50 32 150 4400 0,6 10 1,6 1,7 Remarks: = ') tamp = 25C; *) interrupter modules L Data book reference: S 8 A Can be delivered as "Qualified semiconductor device Photo-threshold switch (see also Integrated circuits) Type Case Fig. Maximum ratings Characteristics Nr. Prot Ic dp ExTO) tr tf mw mA nm Ix ns ns U102P MO 002 44 400 70 660 5 100 100 Photo pulse amplifier (see also Integrated circuits) Type Case Fig. Maximum ratings Characteristics Nr. - Prot Ig Ap 40,5 Auo Ug! Ung mw mA nm nm dB dB U123P DIP 6-lead 45 210 10 840 620 ... 970 94 15 Data book reference: S8A Fig. 38: 18A4 DIN 41876 JEDEC TO 72 E 48 10.53 009 ' 1 be ggg el 22.2 be 19.8 - 2! a c = Fe a Fig. 39: ~20A14 DIN 41 866 ~ JEDEC TO 116 LICHTEMPFINDLICHE ZONE 2 UM DIESEN SCHNITTPUNKT RADIATION SENSITIVE ZONE ) AT THE CROSSOLER ae 315 Fe f | 5 tele = 4-44-40 fo $ i i 7 ! | 1 | ' : 10,2 ! DOS Lane mee Bo : ~ 64 I. + } : i 28.4202 a bles ime 7688 i BSaere Fests 7638 78h Fig. 41: DIP 6-!ead PLANFENSTER. FLAT WINDOW \ SA a5 898 205 Sa (JAS fas 208 5 \i 1 f 4 a) f ry \ cee ee STRAHLUNGSEMPFINOLICHE FLACHE RADIANT SENSITIVE AREA rsay Fig.44: 5G 8 DIN 41 873 JEDEC MO 002 AG 32 esas jar0 "38 | esas Fig. 40: Plastic case LICHTEMPFINDLICHE ZONE 02 UM DIESEN SCHNITTPUNKT RADIATION SENSHILE ZONE O2 40 THE CROSSOLER 3.05 te pre 6 es ee 193 -- 246 - eee oer Fig. 43: Plastic case } -H 0.33 76738 STRAHLUNGSEMPFINDLICHE FLACHE RADIANT SENSITU FE AREA Fig. 2.2 45: Plastic case asos