CEP4060AL/CEB4060AL March 1998 oS N-Channel Enhancement Mode Field Effect Transistor FEATURES e 60V , 15A , Rosion=80M2 @Vas=10V. Rosoon=85mQ @Ves=5.0V. e Super high dense cell design for extremely low Rosion). e High power and current handling capability. e T0-220 & TO-263 package. CEB SERIES TO-263(DD-PAK) G tip Ss CEP SERIES 70-220 00 LF] S ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Vps 60 V Gate-Source Voltage Va@s +20 V Drain Current-Continuous ID 15 A Pulsed IDM 45 A Drain-Source Diode Forward Current Is 15 A Maximum Power Dissipation @Tc=25C Pp 50 W Derate above 25C 0.3 wic Operating and Storage Temperature Range | Tu, TSTG -65 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Rauc 3 C/W Thermal Resistance, Junction-to-Ambient R6JA 62.5 C/W 4-32CEP4060AL/CEB4060AL ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Ves=0V, ID=250uA 60 V Zero Gate Voltage Drain Current loss Vos=60V, Ves = 0V 25 | wA Gate-Body Leakage lass Ves =+16V, Vos=0V +100} nA ON CHARACTERISTICS? Gate Threshold Voltage Vesitt) | Vos=Ves, ln= 250uA 1715 )2 | V Drain-Source On-State Resistance Rosion) Nas=5V, ID=70A 2 | & | mo Ves=10V, ln=15A 58 | 80 | mQ On-State Drain Current ID(ON) Vas = 5V, Vos= 10V 15 A Forward Transconductance Ors Vos = 10V, In=7.5A 11 S DYNAMIC CHARACTERISTICS Input Capacitance Ciss 430 | 600 | PF Vos =25V, Vas= 0V Output Capacitance Coss t= OMHz 126 | 200 | PF Reverse Transfer Capacitance Crss 28 | 50 | PF SWITCHING CHARACTERISTICS Turn-On Delay Time {D(ON) Von = 30V, 8 | 20 | ns Rise Time tr Vesa 140 | 250 | ns Turn-Off Delay Time {D(OFF) Reen=510 30 | 100 | ns Fall Time tf 60 | 150 | ns Total Gate Charge Qg 15 | 17 | nC Gate-Source Charge Qs ie A b= 15A, 3 nc Gate-Drain Charge Qua 2 nC 4-33CEP4060AL/CEB4060AL ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsp Ves = OV, Is =7.5A 09} 13) V Notes a.Pulse Test:Pulse Width <300 1s, Duty Cycle < 2%. b.Guaranteed by design, not subject to production testing. "2 TI 20 F Ves=10,9,8,7,6,5,4V 55 | 10 < = 15 aC = 8 a 5 z Y = Ves=3V = Tj=125C Qo 6 y 6 10 c S a 4 a a ao 45 2, 3 0 0 0 O85 10 15 20 25 30 1 2 3 4 5 6 Vos, Drain-to-Source Voltage (V) Vas, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 600 3.0 a _~ 500 Q 25 c a & a @ 400 Q 2.0 = Se Tj=125C o N = 300 6 15 & Qa = 2 & 200 3 5 1.0 Oo SH 100 ge 0.5 fa 0 0 ) 10 20 30 40 50 0 5 10 15 20 25 Vos, Drain-to Source Voltage (V) Ip, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4-34CEP4060AL/CEB4060AL Vth, Normalized 1.15 2 : Vos=Ves | | = 12 = 6 140b tn=250nA S In=-250 WA > ra a BG 3 11 3 z 1.05 == = is & 1.0 8 E E o 1.00 0.9 zo 8 g B 0.95 Ao a 08 a2 3 O96 oO > $ 07 a 2 0.90 wo So 06 GB 0.85 50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation with Temperature with Temperature 12 20 10 wm 10 Vos=10V _ 8 = s * g QO a 3 6 = wo 8 5 2 4 8 gS 2 Fe a g ? D 0 0.1 0 5 10 15 20 0.4 O86 O08 10 12 1.4 Ips, Drain-Source Current (A) Vsp, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage with Drain Current Variation with Source Current Ss 5 TT = Vos=48V 70, 2 44 to-15a ZA _ ant Cs) YA x 4 > Sf _ 8 3 iP 5 3 LY : 2 2 fl & ih : & { o Vas=10V > T 0 a 0 2 4 6 8 10 12 14 16 1 10 60 100 Qg, Total Gate Charge (nC) Vos, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 4-35CEP4060AL/CEB4060AL VDD ton> toff Ri td(on) >] [4+] tr tof <> i VIN 90% 390% D VouT Ves VOUT INVERTED 10% @) RGEN G Ss VIN * PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms - = N r(t), Normalized Effective Transient Thermal Impedance 0.1 1. Reuc (t)=r (t) * Reuc 2. Rosc=See Datasheet 3. Tum-To = P* Rauc (t) 4. Duty Cycle, D=t1/t2 0.01 0.01 0.1 1 10 100 1000 10000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-36