PART OBSOLETE - Bulletin EOL18 I2716 rev. F 06/03 4GBL Series 4.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Easy to assemble & install on P.C.B. High Surge Current Capability High Isolation between terminals and molded case (1500 VRMS) IO(AV) = 4A VRRM = 50/ 800V Lead free terminals solderable as per MIL-STD-750 Method 2026 Terminals suitable for high temperature soldering at 260C for 8-10 secs UL E160375 approved Description These GBL Series of Single Phase Bridges consist of four glass passivated silicon junction connected as a Full Wave Bridge. These four junctions are encapsulated by plastic molding technique. These Bridges are mainly used in Switch Mode power supply and in industrial and consumer equipment. Major Ratings and Characteristics Parameters 4GBL Units 4 A @ TC 50 C @ 50Hz 150 A @ 60Hz 158 A @ 50Hz 113 A2s @ 60Hz 104 A2s 50 to 800 V IO IFSM 2 It VRRM range TJ www.irf.com - 55 to 150 4GBL o C 1 4GBL Series Bulletin I2716 rev. F 06/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number 4GBL Voltage VRRM, max repetitive VRMS, maximum Code peak rev. voltage RMS voltage TJ = TJ max. TJ = TJ max. V V 005 01 02 04 06 08 50 100 200 400 600 800 VRSM, max non-repetitive IRRM max. IRRM max. reverse voltage @ rated VRRM @ rated VRRM TJ = TJ max. TJ = 25C TJ = 150C V A A 35 70 140 280 420 560 75 150 275 500 725 900 5 5 5 5 5 5 400 400 400 400 400 400 Forward Conduction Parameters IO IFSM Maximum DC output current Maximum peak, one-cycle 4GBL Unit 4 A Conditions TC = 50C, Resistive & inductive load 3.2 TC = 50C, Capacitive load 150 t = 10ms, 20ms 158 t = 8.3ms, 16.7ms non-repetitive surge current, following any rated load condition TJ = 150C and with rated VRRM reapplied I2t Maximum I 2 t for fusing, 113 initial TJ = TJ max 104 VFM Maximum peak forward voltage per diode IRM Typical peak reverse leakage A2s t = 10ms t = 8.3ms 0.975 V TJ = 25 oC, IFM = 4A 5 A TJ = 25 oC, 100% VRRM 50 to 800 V curren t per diode VRRM Maximum repetitive peak reverse voltage range Thermal and Mechanical Specifications Parameters TJ Operating and storage Tstg temperature range RthJC Max. thermal resistance 4GBL Unit -55 to 150 Conditions C o 6.5 C/ W DC rated current through bridge (1) 22 C/ W DC rated current through bridge (1) 2 (0.07) g (oz) junction to case RthJA Thermal resistance, junction to ambient W Approximate weight Note (1): Devices mounted on 75 x 75 x 3 mm aluminum plate 2 www.irf.com 4GBL Series Bulletin I2716 rev. F 06/03 Ordering Information Table Device Code 4 GBL 08 1 2 3 1 - Bridge current 2 - Basic Part Number 3 - Voltage Code: code x 100 = VRRM Outline Table All dimensions are in millimetres www.irf.com 3 4GBL Series 1000 160 Instantaneous Forward Current (A) Maximum Allowable Case Temperature (C) Bulletin I2716 rev. F 06/03 4GBL Series 140 120 180 (Rect) 100 80 180 (Sine) 60 40 20 100 10 T J = 25C T J = 150C 1 4GBL Series 0.1 0 1 2 3 4 0 5 4 7 180 (Sine) 180 (Rect) 5 4 3 2 4GBL Series T J = 150C 1 0 0 1 2 3 1 1.5 2 2.5 3 3.5 4 Fig. 2 - Forward Voltage Drop Characteristics Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Fig. 1 - Current Ratings Characteristics 6 0.5 Instantaneous Forward Voltage (V) Average Forward Current (A) 160 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 140 120 100 80 60 4GBL Series 40 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Total Power Loss Characteristics Fig. 4 - Maximum Non-Repetitive Surge Current www.irf.com 4GBL Series Bulletin I2716 rev. F 06/03 Data and specifications subject to change without notice. This product has been designed and qualified for Multiple Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/03 www.irf.com 5