APT58M50JU2 ISOTOP(R) Boost chopper MOSFET Power Module VDSS = 500V RDSon = 65m Max @ Tj = 25C ID = 58A @ Tc = 25C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch K D Features G S K S G Power MOS 8TM MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant D Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Max ratings 500 58 43 270 30 65 543 42 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-6 APT58M50JU2 - Rev 1 October, 2012 Symbol VDSS APT58M50JU2 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25C VDS = 500V VGS = 0V Tj = 125C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = 30 V Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Min 3 Typ 4 Max 250 1000 65 5 100 Unit Max Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge VGS = 10V VBus = 250V ID = 42A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 340 nC 75 155 60 Resistive switching @ 25C VGS = 15V VBus = 333V ID = 42A RG = 2.2 Rise Time Typ 10800 1164 148 70 ns 155 50 Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/s Min 600 Tj = 25C Tj = 125C Tc = 90C Typ Max 25 500 Tj = 125C Tj = 25C 30 1.8 2.2 1.5 25 Tj = 125C 160 Tj = 25C 35 Tj = 125C 480 Unit V A A 2.2 V ns nC Thermal and package characteristics Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Mosfet Diode 2500 -40 Max 0.23 1.05 20 Unit C/W V 150 300 1.5 29.2 C N.m g 2-6 APT58M50JU2 - Rev 1 October, 2012 Symbol Characteristic APT58M50JU2 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical Mosfet Performance Curve 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single P ulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3-6 APT58M50JU2 - Rev 1 October, 2012 Thermal Impedance (C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 APT58M50JU2 Low Voltage Output Characteristics 250 160 VGS=7,8 &10V 140 TJ=25C 200 ID, Drain Current (A) 150 100 TJ=125C 50 6.5V 120 100 6V 80 5.5V 60 40 20 0 TJ=125C 0 0 5 10 15 20 0 5 20 25 30 2.5 VGS=10V ID=42A 1.5 1 Transfert Characteristics 125 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 100 ID, Drain Current (A) RDSon, Drain to Source ON resistance Normalized RDSon vs. Temperature TJ=125C 75 50 25 TJ=25C 0.5 25 50 75 100 125 0 150 0 1 TJ, Junction Temperature (C) Gate Charge vs Gate to Source 3 4 5 6 C, Capacitance (pF) VDS=250V 8 VDS=400V 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=100V ID=42A TJ=25C 10 2 VGS, Gate to Source Voltage (V) 12 VGS, Gate to Source Voltage 15 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) 2 10 4 2 Ciss 10000 1000 Coss Crss 100 10 0 0 60 120 180 240 300 360 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4-6 APT58M50JU2 - Rev 1 October, 2012 ID, Drain Current (A) VGS=10V Low Voltage Output Characteristics APT58M50JU2 Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 100 80 TJ=125C 60 40 20 TJ=25C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 TJ=125C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge 1.5 600 800 1000 1200 IRRM vs. Current Rate of Charge 30 TJ=125C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/s) 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 175 Duty Cycle = 0.5 TJ=175C 40 150 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/s) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (C) ISOTOP(R) is a registered trademark of ST Microelectronics NV www.microsemi.com 5-6 APT58M50JU2 - Rev 1 October, 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 120 APT58M50JU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. 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