APT58M50JU2
APT58M50JU2 – Rev 1 October, 2012
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 58
ID Continuous Drain Current Tc = 80°C 43
IDM Pulsed Drain current 270
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 65 m
PD Maximum Power Dissipation Tc = 25°C 543 W
IAR Avalanche current (repetitive and non repetitive) 42 A
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP® Boost chopper
MOSFET Power Module
K
D
G
S
VDSS = 500V
RDSon = 65m Max @ Tj = 25°C
ID = 58A @ Tc = 25°C
APT58M50JU2
APT58M50JU2 – Rev 1 October, 2012
www.microsemi.com 2-6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
IDSS Zero Gate Voltage Drain Current VDS = 500V
VGS = 0V Tj = 125°C 1000 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 42A 65
m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 10800
Coss Output Capacitance 1164
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 148
pF
Qg Total gate Charge 340
Qgs Gate – Source Charge 75
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 42A 155
nC
Td(on) Turn-on Delay Time 60
Tr Rise Time 70
Td(off) Turn-off Delay Time 155
Tf Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 333V
ID = 42A
RG = 2.2 50
ns
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 25
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 90°C 30 A
IF = 30A 1.8 2.2
IF = 60A 2.2
VF Diode Forward Voltage
IF = 30A Tj = 125°C 1.5
V
Tj = 25°C 25
trr Reverse Recovery Time Tj = 125°C 160 ns
Tj = 25°C 35
Qrr Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C 480 nC
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Mosfet 0.23
RthJC Junction to Case Thermal Resistance Diode 1.05
RthJA Junction to Ambient (IGBT & Diode) 20
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -40 150
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
APT58M50JU2
APT58M50JU2 – Rev 1 October, 2012
www.microsemi.com 3-6
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single P ulse
0
0.05
0.1
0.15
0.2
0.25
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Source Gate
Drain
Cathode
APT58M50JU2
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Low Voltage Output Characteristics
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=10V
Low Voltage Output Characteristics
5.5V
6V
6.5V
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=7,8 &10V
T
J
=125°C
Normalized R
DSon
vs. Temperature
0.5
1
1.5
2
2.5
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
V
GS
=10V
I
D
=42A
R
DSon
, Drain to Source ON resistance
Ciss
Crss
Coss
10
100
1000
10000
100000
0 50 100 150 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
01234567
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
Gate Charge vs Gate to Source
V
DS
=100V
V
DS
=250V
V
DS
=400V
0
2
4
6
8
10
12
0 60 120 180 240 300 360
Gate Charge (nC)
V
GS
, Gate to Source Voltage
I
D
=42A
T
J
=25°C
APT58M50JU2
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Typical Diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Charge
15 A
30 A
60 A
0
5
10
15
20
25
30
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
15 A
30 A
60 A
50
75
100
125
150
175
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
TJ=125°C
VR=400V
Q
RR
vs. Current Rate Charge
15 A
30 A
60 A
0.0
0.5
1.0
1.5
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
200
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
10
20
30
40
50
25 50 75 100 125 150 175
Case Temperature (°C)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
ISOTOP® is a registered trademark of ST Microelectronics NV
APT58M50JU2
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