FCAS50SN60 - Fairchild Semiconductor

FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

September 2006

FCAS50SN60

Smart Power Module for SRM

Features

• Very low thermal resistance due to using DBC

• 600V-50A single-phase asymmetric bridge IGBT converter

for SRM drive including control ICs for g ate driving and pro-

tection

• Divided negative dc-link terminals for inverter current sensing

applications

• Single-grounded power supply due to built-in HVIC

• Switching frequency of 2.2~8kHz

• Isolation rating of 2500Vrms/min.

Applications

• AC 200V ~ 242V single-phase SRM drives for home

application vacuum cleaner.

General Description

FCAS50SN60 is an advanced smart power module for SRM

drive that Fairchild has newly developed and designed to pro-

vide very compact and high performance SRM motor drives

mainly targeting low-power inverter-driven SRM application

especially for a vacuum air cleaner. It combines optimized cir-

cuit protection and drive matched to low-loss IGBTs. System

reliability is further enhanced by the integrated under-voltage

lock-out and short-circuit protection. The high speed built-in

HVIC provides opto-coupler-less IGBT gate driving capability

that further reduce the overall size of the inverter system

design. In addition the incorporated HVIC facilitates the use of

single-supply drive topology enabling the FCAS50SN60 to be

driven by only one drive supply voltage without negative bias.

Each phase current of inverter can be monitored separately due

to the divided negative dc terminals.

Top View

26.8 mm

Top View

Bottom View

Bo tto m Vie w

Figure 1.

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Integrated Power Functions

• 600V-50A IGBT asymmetric converter for single-phase SRM drives (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

Note) Available bootstrap circuit example is given in Figures 10.

• For low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to a UV fault (Low-side supply)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Figure 2.

Top View

Case Temperature (TC)

Detecting Point

DBCDBC

(1) VCC(L)

(2) COM

(3) NC

(4) NC

(5) IN(L)

(6) VFO

(15) VB

(16) VS

(17) G(H)

(18) E(H)

(19) R(TH)

(20) V(TH)

(7) CFOD

(8) CSC

(9) G(L)

(10) E(L)

(11) NC

(12) NC

(13) IN(H)

(14) VCC(H)

(21) NB2

(22) NC

(23) NB1

(27) P

(24) NA

(25) B

(26) A

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Pin Descriptions

Pin Number Pin Name Pin Description

CC(L) Low-side Common Bias Voltage for IC and IGBTs Driving

2 COM Common Supply Ground

3 NC Dummy Pin

4 NC Dummy Pin

5IN

(L) Signal Input for Low-side IGBT

FO Fault Output

FOD Capacitor for Fault Output Duration Time Selection

SC Capacitor (Low-pass Filter) for Short-Current Detection

(L) Gate terminal of low-side IGBT

10 E(L) Emitter terminal of low-side IGBT

11 NC Dummy Pin

12 NC Dummy Pin

13 IN(H) Signal Input for High-side IGBT

14 VCC(H) High-side Bias Voltage

15 VBHigh-side Bias Voltage for Gate Driving

16 VSHigh-side Bias Voltage Ground for Gate Driving

17 G(H) Gate terminal of the High-side IGBT

18 E(H) Emitter terminal of the High-side IGBT

19 R(TH) Thermistor Series Resistor

20 V(TH) Thermistor Bias Voltage

21 NB2 Negative DC–Link Input for B Leg (Should be shorted with NB1 externally)

22 NC Dummy Pin

23 NB1 Negative DC–Link Input for B Leg (Should be shorted with NB2 externally)

24 NANegative DC–Link Input for A Leg

25 B Output for B Leg

26 A Output for A Leg

27 P Positive DC–Link Input

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Internal Equivalent Circuit and Input/Output Pins

Note:

1. The low-side is composed of one IGBT and freewheeling diode and one control IC which has gate driving and protection functions.

2. The power si de is composed of four dc-link i nput terminals and two output terminals.

3. The high-side is composed of one IGBT and freewheeling diode and one drive IC for high-side IGBT.

Figure 3.

COM(L)

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(WL)

OUT(VL)

OUT(UL)

NB1 (23)

NA (24)

B (25)

A (26)

P (27)

(16) VS

(15) VB

(8) CSC

(7) CFOD

(6) VFO

(5) IN(L)

(4) NC

(3) NC

(2) COM

(1) VCC(L)

VCC

OUT

COM VS

(14) VCC(H)

(13) IN(H)

(11) NC

(9) G(L)

(10) E(L)

(17) G(H)

(18) E(H)

(12) NC

(19) R(TH)

(20) V(TH)

NB2 (21)

NC (22)

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 10 0°C). However, to insure safe operation, the average junction

temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)

Control Part

Total System

Thermal Resistance

Note:

2. For the m easurement p oint of case temperature (TC), please refer to Figure 2.

Symbol Parameter Conditions Rating Units

VPN(Surge) Supply Voltage (Surge) Applied between P- NA, NB1, NB2 550 V

VCES Collector-emitter Voltage 600 V

± ICEach IGBT Collector Current TC = 25°C 50 A

± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 100 A

PCCollector Dissipation TC = 25°C per One IGBT 110 W

TJOperating Junction Temperature (Note 1) -20 ~ 125 °C

Symbol Parameter Conditions Rating Units

VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V

VBS High-side Control Bias Voltage Applied between VB - VS20 V

VIN Input Signal Voltage Applied between IN(H), IN(L) - COM -0.3~5.5 V

VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V

IFO Fault Output Current Sink Current at VFO Pin 5 mA

VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V

Symbol Parameter Conditions Rating Units

VPN(PROT) Self Protection Supply Voltage Limit

(Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V

TJ = 125°C, Non-repetitive, less than 6µs400 V

TCModule Case Operation Temperature -20 ~ 95 °C

TSTG Storage Temperature -40 ~ 125 °C

VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection

Pins to DBC 2500 Vrms

Symbol Parameter Conditions Min. Typ. Max. Units

Rth(j-c)Q Junction to Case Thermal

Resistance Each IGBT under Operating Condition - - 0.90 °C/W

Rth(j-c)F Each FWDi under Operating Condition - - 2.2 °C/W

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Inverter Part

Note:

3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving cond ition internally.

For the detailed information, please see Figure 4.

Figure 4. Switching Time Definition

Symbol Parameter Conditions Min. Typ. Max. Units

VCE(SAT) Collector-Emitter

Saturation Voltage VCC = VBS = 15V

VIN = 5V IC = 50A, TJ = 25°C - 1.6 2.3 V

VFM FWDi Forward Voltage VIN = 0V IC = 50A, TJ = 25°C - 2.1 3.0 V

HS tON Switching Times VPN = 300V, VCC = VBS = 15V

IC = 50A

VIN = 0V ↔ 5V, Inductive Load

RE(H) = 10Ω

(Note 3)

-0.8- µs

tC(ON) -0.6- µs

tOFF -1.5- µs

tC(OFF) -0.8- µs

trr -0.08- µs

LS tON VPN = 300V, VCC = VBS = 15V

IC = 50A

VIN = 0V ↔ 5V, Inductive Load

(Note 3)

-1.1- µs

tC(ON) -0.9- µs

tOFF -1.5- µs

tC(OFF) -0.8- µs

trr -0.05- µs

ICES Collector - Emitter

Leakage Current VCE = VCES - - 250 µA

VCE

VIN

tOFF tC(OFF)

VIN(OFF) 10% VCE 10% IC

VCE IC

VIN

tON tC(ON)

VIN(ON) 10% IC10% VCE

90% IC

100% IC

trr

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)

Control Part

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]

Recommended Operating Conditions

Symbol Parameter Conditions Min. Typ. Max. Units

IQCCL Quiescent VCC Supply

Current VCC = 15V

IN(L) = 0V VCC(L) - COM - - 40 mA

IQCCH VCC = 15V

IN(H) = 0V VCC(H) - COM - - 80 µA

IQBS Quiescent VBS Supply

Current VBS = 15V

IN(H) = 0V VB - VS- - 100 µA

VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V

VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V

VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V

UVCCD Supply Circuit Under-

Voltage Protection Detection Level Applied between

VCC(L) - COM 10.5 - 12.5 V

UVCCR Reset Level 11.0 - 13 V

UVBSD Detection Level Applied between

VB - VS

10.0 - 12.5 V

UVBSR Reset Level 10.5 - 13.0 V

tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.4 1.8 2.0 ms

VIH ON Threshold Voltage Logic‘1’ input voltage Applied between

IN(H), IN(L) - COM 3.0 - - V

VIL OFF Threshold Voltage Logic‘0’ input voltage - - 0.8 V

IINH(ON) Input Bias Current IN(H) = 5V Applied between

IN(H), IN(L) - COM 0.9 - 2.2 mA

IINL(ON) IN(L) = 5V 0.9 - 2.4 mA

RTH Resistance of Thermistor @ TC = 25°C (Note Fig. 10) - 50 - kΩ

@ TC = 80°C (Note Fig. 10) - 5.76 - kΩ

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P - NA, NB1, NB2 - 300 450 V

VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15 16.5 V

VBS High-side Bias Voltage Applied between VB - VS13.5 15 18.5 V

fPWM PWM Input Signal TC ≤ 100°C, TJ ≤ 125°C - 3 - kHz

VIN(ON) Input ON Voltage Applied between IN(H), IN(L) - COM 4 ~ 5.5 V

VIN(OFF) Input OFF Voltage Applied between IN(H), IN(L) - COM 0 ~ 0.65 V

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Mechanical Characteristics and Ratings

Figure 5. Flatness Measurement Position

Parameter Conditions Limits Units

Min. Typ. Max.

Mounting Torque Mounting Screw - M3 5.17 6.29 7.30 Kg•cm

0.51 0.62 0.72 N•m

Surface Flatness Note Figure 5. 0 - 120 um

Weight - 15.0 - g

(+)

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Time Charts of Protective Function

a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UVCCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UVCCR).

a7 : Normal operation: IGBT ON and carrying current.

Fig. 6. Under-Voltage Protection (Low-side)

b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UVBSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UVBSR)

b6 : Normal operation: IGBT ON and carrying current

Fig. 7. Under-Voltage Protection (High-side)

Input S ignal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVCCR

Protection

Circuit S tate SET RESET

UVCCD

a1 a3

a2 a4

Input S ignal

Output Current

Fault Output Signal

Control

Supply Voltage

RESET

UVBSR

Protection

Circuit S tate SET RESET

UVBSD

b1 b3

b2 b4 b6

High-level (no fault output)

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.

c6 : Input “L” : IGBT OFF state.

c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c8 : IGBT OFF state

Fig. 8. Short-Circuit Current Protection (Low-side Operation only)

Fig. 9. R-T Curve of the Built-in Thermistor

In te rn a l IGBT

Ga te -Emitte r V o lta g e

In p u t S ig n a l

O utput Current

Sensing V oltage

F a u lt Ou tp u t S ig n a l

S C R e fe re n ce

Voltage (0.5V )

RC Filter Delay

SC Detection

R-T G ra ph

100

120

20 30 40 50 60 70 80 90 100 110 120 130

Temperature [°C]

Resistance [kΩ]

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Note:

1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s

printed circuit board. The input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal

voltage dr op at input terminal.

2. The logic input is compatible with standard CMOS or LSTTL outputs.

Figure 10. Recommended CPU I/O Interface Circuit

Note:

It would be recommended that the boots trap diode, DBS, has soft and fast recovery characteristics. RBS should be 2.5 times greater than RE(H)

Figure 11. Recommended Bootstrap Operation Circuit and Pa rameters

CPU

COM

5V-Line

1nF

Ω4.7k

VFO

Ω100

1nF

SRM Module

RPF=

CPF=

IN(H)

IN(L)

15V-Line

25Ω

18uF 0.1uF

1000uF 1uF

SRM m odule

Vcc

COM

Vcc

COM

OUT

Outputs

This Value depends on P WM Control Algorithm

DBS

RBS

VSL

RE(H)=10Ω

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Note:

1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2. By virtue of integrating an application specific type HVIC inside the Module, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure

10.

4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.

5. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2) . (Example : if CFOD = 33 nF, then tFO = 1.8ms

(typ.)) Please refer to the note 6 for calculation method.

6. Input signal is Hi gh-Ac tive ty pe. The re is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple

that input signal agree with turn-off/turn-on threshold voltage.

7. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible.

8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 3~4 µs.

9. Each capacitor should be mounted as close to the pins as possible.

10. To preve nt surge dest ruction , the wi ring be tween th e smo othin g cap acitor and the P&N p ins sho uld be a s short as possibl e. The use o f a high frequ ency no n-indu ctive capac-

itor of around 0.1~0 .22 µF between P and N pins is recommended.

11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

12. CSPC15 should be over 1uF and mounted as close to the pins of the module as possible.

13. NB1(pin23) and NB2(pin 21) should be shorted exter nally. Fig. 12. Application Circuit

Fault

15V line

CBS CBSC

RBS DBS

CSP15 CSPC15

CFOD

5V line

RPF

CPL

CBPF

CDCS

Gating BL

CPF

Inp ut Signa l for

Short-Circuit Protection

CSC

Gating AH

COM(L)

VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(WL)

OUT(VL)

OUT(UL)

NB1 (23)

NA (24)

B (25)

A (26)

P (27)

(16) VS

(15) VB

(8) CSC

(7) CFOD

(6) VFO

(5) IN(L)

(4) NC

(3) NC

(2) COM

(1) VCC(L)

VCC

OUT

COM VS

(14) VCC(H)

(13) IN(H)

(11) NC

(9) G(L)

(10) E(L)

(17) G(H)

(18) E(H)

(12) NC

(19) R(TH)

(20) V(TH)

NB2 (21)

NC (22)

RE(H)

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Detailed Package Outline Drawings

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Detailed Package Outline Drawings (Continued)

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

Detailed Package Outline Drawings (Continued)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to

be an exhaustive list of all such trademarks.

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FCAS50SN60 Rev. A

FCAS50SN60 Smart Power Module for SRM

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body, or (b) support

or sustain life, or (c) whose failure to perform when properly used

in accordance with instructions for use pr ovided in the labeling,

can be reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life support device

or system whose failure to perform can be reasonably expected

to cause the failure of the life support device or system, or to

affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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Rev. I14