http://www.fujielectric.com/products/semiconductor/ FGW50N60VD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent circuit Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Symbols VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation FWD Max. Power Dissipation Operating Junction Temperature Storage Temperature PD_IGBT PD_FWD Tj Tstg Characteristics Units Remarks 600 V 20 V 85 A TC =25C, Tj =150C 50 A TC =100C, Tj =150C 100 A Note *1 100 A VCE 600V, Tj 175C 70 A 35 A 100 A Note *1 VCC 320V, VGE=15V 10 s Tj 150C 360 TC =25C W 220 TC =25C -40~+175 C -55~+175 C Collector Gate Emitter Note *1 : Pulse width limited by Tjmax. Electrical characteristics (at Tj = 25C unless otherwise specified) Items Symbols Conditions Collector-Emitter Breakdown Voltage V(BR)CES IC = 250A, VGE = 0V Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = 20V VCE = +20V, IC = 50mA Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 50A Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres Gate Charge QG Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy td(on) tr td(off) tf Eon Turn-Off Energy Eoff Forward Voltage Drop VF Diode Reverse Recovery Time trr1 Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr VCE=25V VGE=0V f=1MHz VCC = 400V IC = 50A VGE = 15V Tj = 25C VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse recovery. Tj = 175C VCC = 400V IC = 50A VGE = 15V RG = 10 L = 500H Energy loss include "tail" and FWD reverse recovery. Tj =25C IF=35A Tj =175C VCC =30V IF = 3.5A -di/dt=200A/s VCC =400V IF=35A -diF/dt=200A/s Tj =25C 1 Tj =25C Tj =175C Tj =25C Tj =175C Characteristics min. typ. max. 600 250 10 200 6.2 6.7 7.2 1.60 2.05 2.1 2900 215 175 - Unit V A mA nA V V pF - 360 - nC - 45 90 310 55 2.4 - - 1.4 - - 45 100 340 60 4.1 - - 2.0 - - 1.5 1.3 1.95 - V V - 50 65 ns - 0.31 - s - 0.75 - C ns mJ ns mJ FGW50N60VD Items Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Symbols Diode Reverse Recovery Time trr2 Diode Reverse Recovery Charge Qrr Characteristics min. typ. max. Conditions VCC =400V IF=35A -diF/dt=200A/s Tj =175C Thermal resistance Items Symbols Thermal Resistance, Junction-Ambient Thermal Resistance, IGBT Junction to Case Thermal Resistance, FWD Junction to Case Rth(j-a) Rth(j-c)_IGBT Rth(j-c)_FWD 2 min. - Unit - 0.49 - s - 3.3 - C Characteristics typ. - max. 50 0.417 0.735 Unit C/W FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Graph.1 DC Collector Current vs T V +15V, T 175C Graph.2 Collector Current vs. switching frequency V =+15V, T 175C, V =400V, D=0.5, R =10, T =100C C GE j GE C G 120 140 120 100 Switching frequency fs [kHz] 100 Collector current IC [A] CC C 80 Tj175 60 40 80 60 40 20 20 0 0 25 50 75 100 125 150 0 175 20 Case Temperature [C] 40 60 80 100 Collector-Emitter corrent : ICE [A] Graph.3 Typical Output Characteristics (V -I ) T =25C CE Graph.4 Typical Output Characteristics (V -I ) T =175C C CE j C j 100 100 VGE = 20V VGE= 20V 15V 80 80 12V 15V 12V 10V 60 IC [A] IC [A] 60 10V 40 40 20 20 8V 8V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 VCE [V] 2.0 2.5 3.0 3.5 4.0 VCE [V] Graph.6 Gate Threshold Voltage vs. T I =50mA, V =20V Graph.5 Typical Transfer Characteristics V =+15V j GE C CE 10 100 9 Gate Threshold Voltage VGE(th) [V] 80 IC [A] 60 40 Tj=175 Tj=25 20 8 typ. max. 7 6 min. 5 4 3 2 1 0 0 0 2 4 6 8 10 12 -50 14 -25 0 25 50 75 Tj [] VGE [V] 3 100 125 150 175 FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.8 Typical Gate Charge V =400V, I =50A, T =25C Graph.7 Typical Capacitance V =0V, f=1MHz, T =25C GE CC j C j 20 4 10 15 Cies VCC=400V 10 VGE [V] C [pF] 3 Coes 10 Cres 2 10 5 1 0 10 -2 -1 10 0 10 0 10 100 200 250 300 350 400 450 500 G j CC CC C GE G 1000 1000 td(off) td(off) Switching Times [nsec] 100 tf td(on) tr 10 tr tf 100 td(on) 10 1 1 0 20 40 60 80 0 100 10 20 50 60 G C j CC GE 40 Graph.12 Typical switching losses vs. R T =175C, V =400V, I =50A, L=500H V =15V Graph.11 Typical switching losses vs. I T =175C, V =400V, L=500H V =15V, R =10 j 30 Gate Resistor Rg [] Collector Current IC [A] CC C GE G 18 8 16 Switching Energy Losses [mJ] 14 Switching Energy Losses [mJ] Switching Times [nsec] 150 Graph.10 Typical switching time vs. R T =175C, V =400V, I =50A, L=500H V =15V C GE 50 Qg [nC] Graph.9 Typical switching time vs. I T =175C, V =400V, L=500H V =15V,R =10 j B 1 10 VCE [V] 12 10 Eon 8 6 Eoff 4 6 Eon 4 Eoff 2 2 0 0 0 20 40 60 80 100 0 120 Collector Current IC [A] 10 20 30 40 Gate Resistor Rg [] 4 50 60 FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.14 Typical reverse recovery characteristics vs. I T =175C, V =400V, L=500H, V =15V,R =10 Graph.13 FWD Forward voltage drop (V -I ) F F j CC GE G 6 600 80 5 Reverse recovery Time [nsec] 500 60 Tj=175 IF [A] Tj=25 40 20 Qrr 4 400 trr 300 3 200 2 100 1 0 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 20 40 VF [V] IF [A] F GE 80 Graph.16 Reverse biased Safe Operating Area T 175C,V =+15V/0V,R =10 Graph.15 Typical reverse recovery loss vs. I T =175C,V =400V,L=500H V =15V,R =10 j 60 j CC GE G G 2.00 200 1.50 150 Collector current IC [A] Reverse recovery loss [mJ] 1.75 1.25 1.00 0.75 0.50 100 50 0.25 0.00 0 0 20 40 60 80 0 200 400 600 Collector-Emitter voltage : VCE [V] IF [A] 5 800 Reverse Recovery Charge [uC] F FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Graph.17 Transient thermal resistance of IGBT 101 Zth(j-c) [/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 10-1 100 t [sec] Graph.18 Transient thermal resistance of FWD 101 Zth(j-c) [/W] 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 t [sec] 6 FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Outview : TO-247 Package CONNECTION GATE COLLECTOR EMITTER DIMENSIONS ARE IN MILLIMETERS. 7 FGW50N60VD Discrete IGBT http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7.Copyright (c)1996-2011 by Fuji Electric Co., Ltd. All rights reserved. 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