1
http://www.fujielectric.com/products/semiconductor/
FGW50N60VD Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 50A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Inverter for Motor drive
AC and DC Servo drive amplier
Uninterruptible power supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specied)
Items Symbols Characteristics Units Remarks
Collector-Emitter voltage VCES 600 V
Gate-Emitter voltage VGES ±20 V
DC Collector Current IC@25 85 A TC=25°C, Tj=150°C
IC@100 50 A TC=100°C, Tj=150°C
Pulsed Collector Current ICP 100 A Note *1
Turn-Off Safe Operating Area - 100 A VCE≤600V, Tj≤175°C
Diode Forward Current IF@25 70 A
IF@100 35 A
Diode Pulsed Current IFP 100 A Note *1
Short Circuit Withstand Time tSC 10 μs VCC ≤320V, VGE=15V
Tj≤150°C
IGBT Max. Power Dissipation PD_IGBT 360 WTC=25°C
FWD Max. Power Dissipation PD_FWD 220 TC=25°C
Operating Junction Temperature Tj-40~+175 °C
Storage Temperature Tstg -55~+175 °C
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items Symbols Conditions Characteristics Unit
min. typ. max.
Collector-Emitter Breakdown Voltage V(BR)CES IC = 250μA, VGE = 0V 600 - - V
Zero Gate Voltage Collector Current ICES VCE = 600V, VGE = 0V Tj=25°C - - 250 µA
Tj=175°C - - 10 mA
Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter Threshold Voltage VGE (th) VCE = +20V, IC = 50mA 6.2 6.7 7.2 V
Collector-Emitter Saturation Voltage VCE (sat) VGE = +15V, IC = 50A Tj=25°C - 1.60 2.05 V
Tj=175°C - 2.1 -
Input Capacitance Cies VCE=25V
VGE=0V
f=1MHz
- 2900 -
pFOutput Capacitance Coes - 215 -
Reverse Transfer Capacitance Cres - 175 -
Gate Charge QG
VCC = 400V
IC = 50A
VGE = 15V
- 360 - nC
Turn-On Delay Time td(on) Tj = 25°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
- 45 -
ns
Rise Time tr- 90 -
Turn-Off Delay Time td(off) - 310 -
Fall Time tf- 55 -
Turn-On Energy Eon - 2.4 -
mJ
Turn-Off Energy Eoff - 1.4 -
Turn-On Delay Time td(on) Tj = 175°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
- 45 -
ns
Rise Time tr- 100 -
Turn-Off Delay Time td(off) - 340 -
Fall Time tf- 60 -
Turn-On Energy Eon - 4.1 -
mJ
Turn-Off Energy Eoff - 2.0 -
Forward Voltage Drop VFIF=35A Tj=25°C - 1.5 1.95 V
Tj=175°C - 1.3 - V
Diode Reverse Recovery Time trr1
VCC=30V
IF = 3.5A
-di/dt=200A/µs
- 50 65 ns
Diode Reverse Recovery Time trr2 VCC=400V
IF=35A
-diF/dt=200A/µs
Tj=25°C
- 0.31 - µs
Diode Reverse Recovery Charge Qrr - 0.75 - µC
Equivalent circuit
Gate
Emitter
Collector
2
Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
3
Thermal resistance
Items Symbols Characteristics Unit
min. typ. max.
Thermal Resistance, Junction-Ambient Rth(j-a) - - 50
°C/W
Thermal Resistance, IGBT Junction to Case Rth(j-c)_IGBT - - 0.417
Thermal Resistance, FWD Junction to Case Rth(j-c)_FWD - - 0.735
Items Symbols Conditions Characteristics Unit
min. typ. max.
Diode Reverse Recovery Time trr2 VCC=400V
IF=35A
-diF/dt=200A/µs
Tj=175°C
- 0.49 - µs
Diode Reverse Recovery Charge Qrr - 3.3 - µC
2
3
Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
-50 -25 0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
min.
max.
typ.
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
0 20 40 60 80 100
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
20
40
60
80
100
12V
8V
10V
15V
V
GE= 20V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
20
40
60
80
100
12V
8V
10V
15V
V = 20V
0 2 4 6 8 10 12 14
0
20
40
60
80
100
Tj=175℃ Tj=25℃
Tj≤175℃
GE
Switching frequency fs [kHz]
Collector-Emitter corrent : ICE [A]
Collector current IC [A]
Case Temperature [°C]
Gate Threshold Voltage VGE(th) [V]
Tj [℃]
IC [A]
VCE [V]
IC [A]
VCE [V]
IC [A]
VGE [V]
Graph.1
DC Collector Current vs TC
VGE≥+15V, Tj≤175ºC
Graph.2
Collector Current vs. switching frequency
VGE=+15V, TC≤175ºC, VCC=400V, D=0.5,
RG=10Ω, TC=100ºC
Graph.3
Typical Output Characteristics (VCE-IC)
Tj=25ºC
Graph.4
Typical Output Characteristics (VCE-IC)
Tj=175ºC
Graph.5
Typical Transfer Characteristics
VGE=+15V
Graph.6
Gate Threshold Voltage vs. Tj
IC=50mA, VCE=20V
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Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
5
10-2 10-1 100101
101
102
103
104
Cres
Coes
Cies
0 50 100 150 200 250 300 350 400 450 500
0
5
10
15
20
B
VCC=400V
0 20 40 60 80 100
1
10
100
1000
tr
tf
td(off)
td(on)
0 10 20 30 40 50 60
1
10
100
1000
tr
tf
Switching Times [nsec]
td(off)
td(on)
0 20 40 60 80 100 120
0
2
4
6
8
10
12
14
16
18
Eon
Eoff
0 10 20 30 40 50 60
0
2
4
6
8
Eoff
Eon
Graph.7
Typical Capacitance
VGE=0V, f=1MHz, Tj=25ºC
Graph.8
Typical Gate Charge
VCC=400V, IC=50A, Tj=25ºC
Graph.9
Typical switching time vs. IC
Tj=175ºC, VCC=400V, L=500µH
VGE=15V,RG=10Ω
Graph.10
Typical switching time vs. RG
Tj=175ºC, VCC=400V, IC=50A, L=500µH
VGE=15V
Graph.11
Typical switching losses vs. IC
Tj=175ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
Graph.12
Typical switching losses vs. RG
Tj=175ºC, VCC=400V, IC=50A, L=500µH
VGE=15V
Switching Energy Losses [mJ]
Collector Current IC [A]
C [pF]
VCE [V]
VGE [V]
Qg [nC]
Switching Times [nsec]
Collector Current IC [A]
Switching Times [nsec]
Gate Resistor Rg [Ω]
Switching Energy Losses [mJ]
Gate Resistor Rg [Ω]
4
5
Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
Tj=175℃
Tj=25℃
0 20 40 60 80
0
100
200
300
400
500
600
0
1
2
3
4
5
6
Qrr
trr
0 20 40 60 80
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0 200 400 600 800
0
50
100
150
200
Graph.15
Typical reverse recovery loss vs. IF
Tj=175°C,VCC=400V,L=500µH
VGE=15V,RG=10Ω
Graph.16
Reverse biased Safe Operating Area
Tj≤175°C,VGE=+15V/0V,RG=10Ω
Graph.13
FWD Forward voltage drop (VF-IF)
Reverse recovery loss [mJ]
VF [V] IF [A]
Collector current IC [A]
Graph.14
Typical reverse recovery characteristics vs. IF
Tj=175°C, VCC=400V, L=500µH,
VGE=15V,RG=10Ω
Reverse recovery Time [nsec]
IF [A]
Reverse Recovery Charge [uC]
IF [A] Collector-Emitter voltage : VCE [V]
6
Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
7
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Graph.18
Transient thermal resistance of FWD
Graph.17
Transient thermal resistance of IGBT
Zth(j-c) [℃/W]
t [sec]
Zth(j-c) [℃/W]
t [sec]
6
7
Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
① ② ③
① ② ③
Outview : TO-247 Package
CONNECTION
①GATE
②COLLECTOR
③EMITTER
DIMENSIONS ARE IN MILLIMETERS.
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Discrete IGBT
FGW50N60VD
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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