TOSHIBA 4N38,4N38A (Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N38(Short), 4N38A(Short) AC LINE/DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LOGIC / DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER. & 5 (4 HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL. a RELAY CONTACT MONITOR. z 735 The TOSHIBA 4N38 (Short) through 4N38A (Short) consists of a 7122028, 39 7.62 0.25 gallium arsenide infrared emitting diode coupled with a silicon 5 phototransistor in a dual in-line package. 0.5+0.1 1.2+0.15 zi | @ Switching Speeds : 3yus (Typ.) 3 7.85~ 8.80 2.54 + 0.25 e DC Current Transfer Ratio : 100% (Typ.) 0.8 + 0.25 5 @ Isolation Resistance : 10 (Min.) @ = Isolation Voltage : 2500Vrms (Min.) TOSHIBA 11-7A8 @ UL Recognized : UL1577, File No. E67349 Weight : 0.4 PIN CONFIGURATIONS (Top view) 1Q 116 MEN 5 30 4 : ANODE : CATHODE : N.C. : EMITTER : COLLECTOR : BASE a a fF WN 1 2001-06-01TOSHIBA 4N38,4N38A(Short) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Continuous) Ip 80 mA Forward Current Derating AlIp/C 1.07 (*) jmA/C a Peak Forward Current (Note 1) IpF 3 A +] | Power Dissipation Pp 150 mW Power Dissipation Derating APp/C 2.0 (*) mW/C Reverse Voltage VR 3 Vv mM |Collector-Emitter Voltage BVCEO 80 Vv Collector-Base Voltage BVCBO 80 V q | Emitter-Collector Voltage BVECO 7 Vv 5 Collector Current (Continuous) Ic 100 mA = | Power Dissipation Pc 150 mW | Power Dissipation Derating APC /C 2.0 (*) mW/C a Storage Temperature Tste 55~150 C 4 | Operating Temperature Topr 55~100 C . Lead Soldering Temperature (at 10s) Tol 260 C > |Total Package Dissipation Pr 250 mW 2 Total Package Power Dissipation APp/C 3.3 (*) w/C Derating (Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25C ambient. 2001-06-01TOSHIBA 4N38,4N38A(Short) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.} UNIT Q |Forward Voltage VE Ip=10mA 1.15 | 1.5 Vv 4 |Reverse Current IR VR=3V 100 | wA 4 Capacitance Cp V=0, f=1MHz 30 | pF DC Forward Current Gain | hrg VCE=5V, I=500 nA 200 | Collector-Emitter _ oe [Breakdown Voltage V (BR) CEO| 1= 1mA 80) _ Vv | Collector-Base Breakdown _ _ _ | Voltage V(BRcBO|Ic=100nA 80 V oO 7 Emitter-Collector ca = _ e |Breakdown Voltage V (BR) ECO| le= 10044 7 Vv 5 Collector Dark Current IckKO VcE=60V 1 50 | nA Collector Dark Current IcBo VcB=60V 0.1 20 | nA Collector-Emitter Capacitance CCE V=0, f=1MHz 0 P Current Transfer Ratio Ic /Ip Ip=10mA, VoRf=10V 10; 100} % Collector-Emitter _ _ Saturation Voltage VCE (sat) |IF=20mA, I=4mA i 7 10) Vv Capacitance Input to A = = F 2 | output Cg Vg=0, f=1MHz 0.8 p . Isolation Resistance Rg Vsg=500V, R.H.= 60% 10" | ~ QO 5 BVs AC, 1 minute 2500 | | Vrms o 4N38 1500 | _ i k |Isolation Voltage 4N38A| BVs (*) AC, peak 2500 | a Vp 4N38A AC, 1 second 1775 | | Vrms Turn-On Time toN VcE=10V, Ic=2mA _ 3] Turn-Off Time tOFF | RL, =1000 _ 3/ | (*) JEDEC registered minimum BVg, however, TOSHIBA specifies a minimum BVg of 2500Vrms, 1 minute. 2001-06-01TOSHIBA 4N38,4N38A (Short) Pc - Ta 200 e a FA a = a &= 160 > g 3 ae 3 Se ag em 120 Be az a ae Ei OE | Hac 80 a oe 3 2g 5 SF 40 el 4 q z a << 0 0 -20 0 20 40 #60 80 100 120 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Irp DR Ip VF 5000 1000 gq & 3000 500 & 3 300 1000 fia 5 = 100 Bj 500 bs Z & 300 es 50 o fs 30 eI 8 <= 100 A : 2 o 50 5 5 a 30 PULSE WIDTH= 300s 3 2 Ta=25C 10 1 10-8 10-2 10-1 10 0.6 0.8 1.0 1.2 14 16 18 DUTY CYCLE RATIO Dp FORWARD VOLTAGE Vr (V) AVF/ATa Ip Irp VFP -3.2 1000 500 300 | N oo | N ES 100 I N 50 30 I C o> 10 | r Ny PULSE WIDTH= 10ps REPETITIVE FREQUENCY =100Hz FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) S a PULSE FORWARD CURRENT Ipp (mA) Ta =25C -0.4 0.1 0.3 1 3 10 30 0.6 1.0 1.4 1.8 2.2 2.6 FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vp (V) 4 2001-06-01TOSHIBA COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Ic - IF 100 Ta=25C VcE=10V ~--- VoR=04V 50 30 10 5} SAMPLE A SAMPLE B 0.5 0.2 1 3 10 30 100 FORWARD CURRENT Ip (mA) Ic Ta 0.1 -60 -40 -20 0 20 40 60 80 =: 100 AMBIENT TEMPERATURE Ta (C) CURRENT TRANSFER RATIO Ic/Ip (%) COLLECTOR CURRENT Ic (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VcE (sat) (V) 0.05 0.03 0.01 60 400 300 200 100 S om Ss b> S a 4N38,4N38A(Short) Ic/Ip - IF Ta =25C Vcor=10V \| ---- Vop=0.4V 4 SAMPLE A /4 | A JA. Le \f r J Le" Lf eomh. a Lo <s.| SAMPLE B 3 10 30 100 300 FORWARD CURRENT Ip (mA) Ic - VCE 20mA Ta=25C 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE VoE (V) VCE (sat) Ta Ip=10mA I=2mA -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) 2001-06-01TOSHIBA 4N38,4N38A (Short) ICEO Ta ICEO RBE 10 VoE=24V Ta=100C co 0.5 0.3 0.1 0.05 0.03 COLLECTOR DARK CURRENT Icgq (A) 0.01 100k 1M 10M wo BASE-EMITTER RESISTANCE Rpg (Q) COLLECTOR DARK CURRENT Icgo (HA) SWITCHING CHARACTERISTICS RBE TURATED OPERATIO Ta=25C Voc=5V IF Oo 0 20 40 60 80 100 120 G AMBIENT TEMPERATURE Ta (C) 3 SWITCHING CHARACTERISTICS Ry, TED TI 1000 Voc=5V Ru 500 ve Vout 100 300 50 30 SWITCHING TIME (us) 100 10 50 30 SWITCHING TIME (us) 10 3M 1M 300k 100k 30k 10k BASE-EMITTER RESISTANCE RpRr (Q) 05 1 3 10 30 LOAD RESISTANCE Ry, (kQ) 6 2001-06-01TOSHIBA 4N38,4N38A (Short) RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 7 2001-06-01