3875081 GE SOLID STATE DIE 17178 High-Voltage Power Transistors 2N6077, 2N6078, 2N6079 High-Voltage, High Power Silicon N-P-N Transistors For Switching and Linear Applications Features: @ Maximum safe-area-of-operation curves @ Low saturation voltages 8 High voltage ratings: Veen[sus] = 300 V [2N6077] = 275 V [2N6078] = 375 V [2N6079] & High dissipation ratings : Py = 45 W RCA-2N6077, 2N6078, and 2N6079 are multiple epitaxial silicon n-p-n transistors. Multiple-epitaxial construction maximizes the voltampere characteristic of the device and provides fast switching speeds. These devices use the popular JEDEC TO-213AA package; they differ mainly in voltage ratings, leakage-current limits, and Vce(sat) ratings. The 2N6077 is characterized for switching applications with load lines in the active region. These applications include sweep circuits and all circuits using the transistor as an active voltage clamp. Type 2N6078 is characterized for switching applications with the load line extending into the reverse-bias region. Its voltage ratings make this device useful for switching regula- tors operating directly from a rectified 110-V or 220-V power line. The unit is rated to take surge currents up to 5 A and maintain saturation. MAXIMUM RATINGS, Absolute-Maximum Values: *COLLECTOR-TO-BASE VOLTAGE.........00..e 000 Vecao COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: With base Open....... 0... cece eee cece renee eee Veeo(Sus) * With reverse bias (Vac) Of -1.5 V ...... 0... eee eee eee Vcex(sus) With external base-to-emitter resistance (Ree) = 50Q... Vcer(sus) *EMITTER-TO-BASE VOLTAGE ..............-2.0..0.. Veso *COLLECTOR CURRENT: le Continuous .. 2.22.2... e ences = | ay *CONTINUOUS BASE CURRENT ..............-0ee eee lp *TRANSISTOR DISSIPATION: Py At case temperatures up to 25C and Vce up to 40 V..... At case temperatures up to 25C and Vee above 40V .... Al case temperatures above 25C and Vce above 40 V .. *TEMPERATURE RANGE: Storage & Operating (Junction) ....,......eeseeeeeee *PIN TEMPERATURE (During Soldering): At distances 21/32 in. (0.8 mm) from case for 108 max. ... 22.0.2. eee ee * In accordance with JEDEC registration data format (JS-6, RDF-1). 180 OL DE 3475061 00171378 1 File Number 492 TERMINAL DESIGNATIONS c e~ {FLANGE} 8 92CS-27516 JEDEC TO-213AA The 2N6079 is characterized for use in inverters operating directly from a rectified 110-V power line. The leakage cur- rent is specified at 450 volts; therefore the device can also be used in a series bridge configuration on a 220-V line. The Veo rating of 9 volts eases requirements on the drive trans- former in inverter applications. Storage time, an important factor in the frequency stability of an inverter, is specified in Fig. 12, which shows variation In storage time with variation in load current from zero to maximum (4 A). 2N6077 2N6078 2N6079 300 275 375 Vv 275 250 350 v 300 275 375 v 300 275 375 Vv 6 6 9 Vv 7 7 7 A 10 10 10 A 4 4 4 A 45 45 45 Ww See Fig. 1 See Figs. 1,2,&3 -65to +200 __ssCi 230 C bp 7-33-17 0720 C-OLRT Te Tae om ne Spee EY L eerenORTET wT ree we ner 7 CU MOPED RIRCR DRA ORO EOI BE SONI 6 AIR ores cele DoH tener o721 3875081 G & SOLID STATE - O14 DE 3875081 OOV7L74 3 i ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25C O1E 17179 D mign-voitage Power Transistors 2N6077, 2N6078, 2N6079 Characteristic Symbol Test Conditions Limits oc Callector Voitage (Vv) oc Emitter Voltage(V} oc Current fay Type 2N6077 Type 2N6078 Type 2N6079 Units Vee Von] Vee ir Te__] Min, Max. | Min. | Typ. {| Max. Min. Typ. Max, Collector-Cutoff Currant: With base open iceo 250 o mA With base-emitter junction reverse brased 'cev 250 480 -t5 -15 aise | | 2 a With base-emitter junction reverse biased 'cev Te= 1250 250. 450 15 15 | ' ' N ay Emitter-Cutoff Current leno -6 oo 1 t = Collector-ta-Emutter fSustaining Voltage {sco Figs. 15 & 16) With base open Veeotsusib With external base-to-emitter resistance (Rug) = 50 & Veertsusi? 0.2 Emytter-ta-Base Voltage Veo oot 6 jDC Forward-Current Transfer Ratio hee 28 70 12 28 ss 28 60 Base-to-Erutter Saturation Voltage Vpetsati 1.0 1.2 | | 1 Mita 7 1.0 = - 16 1.0 1.3 tot ycatlector-to-Emitter Saturation Voltage Veetsat kn mes gy [OO iP ay 0.15 0.25 015 o a = = los 0,15 os 8 a tw | Output Capacitance {At 1 MHz) Cabo a 3 t ' Bho 3 pF Magnitude of Common Emitter, Small-Signal, Short- Circust, Forward-Current Transfer Ratto (f = 1 MHz) [nef 0.2 Eacond Breakdown Collector Current (With base forward biased} Pulse duration inon-repetitivel = 15 'spo 50 og og Second Breakdown Energy (With base reverse biased} Rg = 50 2,L = 100nK Esipd 4 Switching Times: Oelay {See Figs. 10, 17, & 18) Voo=280V 0,28 0.62 0.02 - 0.02 Rise * (See Figs. 13, 17, & 18} Voc -250 0.2 03 03 Storage (See Figs. 11, 12, tig& 18) Veo =250 0.2% 28 us (See Figs, 14, 17, & 18) Voc =250V 02 0.3 075 = a3 0.75 03 0.75 FThermat Resistance {duaction-to-Casal Oc 20 34 a9 "ow @ Pulsed; pulse duration <350 ys, Duty factor = 2%. bDCAUTION: The sustaining voltages Voegisus), and VceR(sus), MUST NOT be measured on a curve tracer. These sustaining voltages should be measured by means of the test circuit shown in Fig. 15. Icyp is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction forward biased for transistor operation in the active region. 5 Egjp is defined as the energy at which second breakdown occurs under specified reverse bias conditions. Eg/p = 1/2 Li2 where L is a series load or feakage inductance, and | is the peak collector current. ip) = Iga = value shown, * In accardance with JEDEC registration data format (JS-6 RDF-11. 181 c-023875081 GE SOLID High-Voltage Power Transistors STATE O1E 17160 0 T-337// 2N6077, 2NG078, 2N6079 O1 De ffsa7soai 0017180 * PULSE OPERATION ~ * Ig MAX (PULSED) 8 6 4 (Te1226C a @ NONREPETITIVE 0 = COLLECTOR CURRENT (I)~A 2 MAX. = 275 V (2N6077) YCEO MAX. = 350 V (2N6079) 2 4 6 8 2 4 68 t 10 loo ' 4 4oo0 COLLECTOR-TO-EMITTER VOLTAGE (Vogl-V 92cs-19022 Fig.1Maximum operating areas for all types. * Ic MAXAPULSED) NONREPETITIVE COLLECTOR CURRENT ( Vega MAX 250V Vogo MAX. 275 Vi2N6077) Veo MAX 350 V(2N6079) ' 2 4 6 849 2 4 6 Bigg 2 4 & 81000 COLLECTOR-TO-EMITTER VOLTAGE (Vcg)V g2cs-19025 oo Fig.2Maximum operating areas for ail types. 182 oy 0722 c-03; 3875081 G SOLID STATE D1E A7181 0 T- 331! | ol DE Pf 3a7soa1 Oon7lal me | ge Power Transistors 2N6077, 2N6078, 2N6079 COLLECTOR-TO-EMITTER VOLTAGE lcgir5 V MAXIMUM 142) DO VALUE FOR COLLECTOR CURRENT (Ici a & z 8a =8 4 ges nee Qua ao5 s Ww 536 Ze eG 88 Fes wu oor we Se Bue #e CASE TEMPERATURE (To) -*C BASE-TO-EMITTER VOLTAGE (VgelV S28$-4072 At 925S-407ERL Fig.3Derating curve for all types. Fig.4Typical transfer characteristics for all types. . A 5 ee ak Ge Be 3 =o ee & ae tnd 8a 2 ain Ff 2 e z 2 4 68 46 2 68 O.01 al t 10 0.01 i 1 0 COLLECTOR CURRENT IZcIA COLLECTOR CURRENT (IIl-A 120, jogos Fig.5Typical normalized dc beta characteristics for all Fig.6Typical normalized dc beta characteristics for all types. types. Note (Figs. 5 & 6): To estimate min., max, hpg at any current and temperature, read normalized de forward.current transfer ratio and multiply by min., max. specifications given in Electrical Character- istics Chart (p. 2). TEMPERATURE (Tp 225C 4 COLLECTOR CURRENT (I)A @ g Zz a = = 5 3 Pd S 2 S a a a 3 8 } 0 ! 2 3 4 5 6 7 ! 3 4 3 6 ? a COLLECTOR-TO-EMTTTER VOLTAGE {Vcg) 9205-19026 COLLECTOR-TO-EMITTER VOLTAGE (VcEIV = 9208-19027 Fig.?7Typical output characteristics for all types. Fig.8Typical output characteristics for all types. 183 0723 C-04G E SOLID STATE High-Voltage Power Transistors DE 3475061 oou718e 3 fo T-33-]) 2N6077, 2N6078, 2N6079 25C TEMPERATURE 2 3 4 5 6 COLLECTOR CURRENT (Z]A 92c5-19028 Fig.9Typical saturation voltage characteristics for alt types. STORAGE TIME (ty) pa COLLECTOR CURRENT (Tc)A 9 20$-19030 Fig.11~Typical storage-time characteristic for all types (with constant forced gain). Ivog}#250 TEMPERATURE (Tc )= 25C COLLECTOR CURRENT (IclA 9208-19032 Fig. 13 Typical rise-time characteristic for all types. 184 20a8 = 100Hz VOLTAGE (voc 250 TEMPERATURE (Te] 25C BETA (Reg) *5 THROUGH 10 e-l 1 Be COLLECTOR CURRENT (I}A 92c8-19029 Fig.10Typical delay-time characteristic for all types. PULSE OURATION < 20 pa RATE #100 Hz SUPPLY VOLTAGE (Yoc)*250 CASE TEMPERATURE (Tc lt 25C SOSA 4 3 3 = 2 & 2 3 4 5 COLLECTOR CURRENT iIcIA 9205-19035 Fig.12Typical storage-time characteristic for alf types (with constant-base drives), PULSE DURATION $ 20 us REPETITION RATE =100 Hy COLLECTOR SUPPLY VOLTAGE (Vccl*250 CASE TEMPERATURE (Te) = 25C Ip, FALL TIME 2 2 3 4 COLLECTOR CURRENT (Ic]A 9205-19033 Fig.14Typical fall-time characteristic for all types. 0724 c-05OL DE 3875041 no1?7144 5 3875081 GE SOLID STATE O1E 17183 4b TSS] High-Voltage Power Transistors 2N6077, 2N6078, 2N6079 PusH TEST . tL oO HOnNPUT i Mi (eua) v (aus) INPUT 1SmH (Wegx-1omH) Veg POWER < cE CER SUPPLY . TEKTRONIX OSCILLOSCOPE HIGH- VOLTA = MODEL AM-SO3,0R EQUIY p TOE TEST Sevechion OF ae 2N3595 (Vo g400V) 3 # sed 5 VERTICAL 3 INPUT = WO CLARE 4 MODEL No HGP-2034, a Of EQUIVALEN 8 GROUND aK COLLECTOR-TO-EMITTER VOLTAGE (Vcg)V we on 92S-19015 ! VoEo O oO The sustaining voltagas VcEgisus) and VceR(sus} sre acceptable when YoerO dow the traces fall to the right and above point A for type 2N6078 point 8.5 VOLTAGE SOURCE Voex B for type 2NG077 and point CG for type 2NGO79. 4 9 Lv 92CS8-15902 Fig.16Circuit used to measure sustaining voltages Vceotsus), Fig.16-Oscilloscope display for measurement of sustaining VcoeR(sus} for all types. voltages {test circuit shown in Fig. 18). + 4 SYRC QUT cee 5g Te, ye 4 TIME az 3 I Ba INPUT WAVE FORE 1 t ' ' AMPLIFIER PULSE IGEHERATOR ress Swit ig, AND Ig, MEASURED WITH TEKTROHIX CURRENT PROSE P6019 OR EQUIVALENT COLLECTOR CURRENT QuTPUT WAVE FORM 9255-4085 - Fig.17Circuit used to measure switching times for all types. Fig.18-Phase relationship between input and output currents showing reference points for specification of switching times. (Test circuit shown in Fig. 17). 185 0725 Cc-06