1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features and benefits
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 23 dB gain (1 dB up to 2.7 GHz)
9 dBm output power at 1 dB compression point
Good linearity for low current (IP3out = 22 dBm)
Low second harmonic; 38 dBc at PL = 5 dBm
Unconditionally stable (K 1.2).
1.3 Applications
LNB IF amplifiers
Cable systems
ISM
General purpose.
1.4 Quick reference data
BGA2716
MMIC wideband amplifier
Rev. 3 — 8 September 2011 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VSDC supply voltage - 5 6 V
ISsupply current - 15.9 - mA
s212insertion power gain f = 1 GHz - 22.9 - dB
NF noise figure f = 1 GHz - 5.3 - dB
PL(sat) saturated load power f = 1 GHz - 11.6 - dBm
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 2 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1V
S
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
BGA2716 - plastic surface mounted package; 6 leads SOT363
Table 4. Marking
Type number Marking code
BGA2716 B7-
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VSDC supply voltage RF input AC
coupled -6V
ISsupply current - 30 mA
Ptot total power dissipation Tsp 90 C-200mW
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
PDmaximum drive power - 10 dBm
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 3 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
6. Thermal characteristics
7. Characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction
to solder point Ptot = 200 mW;
Tsp 90 C300 K/W
Table 7. Characteristics
VS=5V; I
S=15.9mA; T
j=25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ISsupply current 13 15.9 21 mA
s212insertion power
gain f = 100 MHz 21 22.1 23 dB
f = 1 GHz 22 22.9 24 dB
f = 1.8 GHz 22 23.1 25 dB
f = 2.2 GHz 21 22.8 24 dB
f = 2.6 GHz 20 22.1 24 dB
f = 3 GHz 19 20.8 22 dB
s112input return
losses f = 1 GHz 15 17 - dB
f = 2.2 GHz 10 12 - dB
s222output return
losses f = 1 GHz 10 12 - dB
f = 2.2 GHz 9 11 - dB
s122isola ti on f = 1.6 GHz 30 31 - dB
f = 2.2 GHz 33 35 - dB
NF noise figure f = 1 GHz - 5.3 5.4 dB
f = 2.2 GHz - 5.5 5.6 dB
B bandwidth at s212 3 dB below flat
gain at 1 GHz 33.2- GHz
K stability factor f = 1 GHz - 1.4 -
f = 2.2 GHz - 1.9 -
PL(sat) saturated load
power f = 1 GHz 10 11.6 - dBm
f = 2.2 GHz 6 7.5 - dBm
PL(1dB) load power at 1 dB gain compressi on;
f = 1 GHz 88.9- dBm
at 1 dB gain compressi on;
f=2.2GHz 56.1- dBm
IM2 second order
intermodulation
product
at PL = 5 dBm;
f0=1GHz 36 38 - dBc
IP3in input, third
order interce p t
point
f = 1 GHz 20.7 - dBm
f = 2.2 GHz 86.9 - dBm
IP3out output, third
order interce p t
point
f = 1 GHz 21 22.2 - dBm
f = 2.2 GHz 15 15.9 - dBm
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 4 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
8. Application information
Figure 1 shows a typical application circuit for the BGA2716 MMIC. The device is
internally matched to 50 , and therefore does not need any externa l matching. The value
of the input and outpu t DC blocking cap acitors C2 and C3 should not be m ore than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.
Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.
The printed-cir cuit board (PCB) top gro und plane, conn ected to pins 2, 4 and 5 mu st be as
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2 shows the PCB layout, used for the standard demonstration board.
Fig 1. Typical application circuit.
mgu436
RF_OUT
RF_IN
C1
L1
C2 C3
GND2GND1
VS
VS
RF input RF output
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 5 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
8.1 Application examples
The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (se e Figure 3).
Material = FR4; thickness = 0.6 mm, r = 4.6.
Fig 2. PCB layout and demonstration board showing components.
001aab256
OUTIN
PH
V+
PHILIPS
OUTIN
PH
V+
PHILIPS
C3
C2 L1
C1
DUT
30 mm
30 mm
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 6 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution
(see Figure 4).
As driver amplifier in the TX path, the good linear performance and matched input/output
offer quick design solutions (see Figure 5).
Fig 3. Application as IF amplifier.
Fig 4. Application as RF amplifier.
Fig 5. Application as driver amplifier.
from
RF circuit to IF circuit
or demodulator
mgu438
mixer
oscillator
wideband
amplifier
antenna to IF circuit
or demodulator
mgu439
mixer
LNA
oscillator
wideband
amplifier
from modulation
or IF circuit to power
amplifier
mgu440
mixer
oscillator
wideband
amplifier
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 7 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
IS = 15.9 mA; VS = 5 V; PD = 35 dBm; Zo = 50 .
Fig 6. Input reflection coefficient (s11); typical valu es.
IS = 15.9 mA; VS = 5 V; PD = 35 dBm; Zo = 50 .
Fig 7. Output reflection coefficient (s22); typical values.
001aab257
90°
−90°
5
0.50.2
+0.2
0
+2
+5
−5
−2
−0.2
+0.5
−0.5
+1
−1
2
110 0
0.2
0.6
0.4
0.8
1.0
1.0
−45°−135°
45°135°
180°0°
4 GHz
100 MHz
001aab258
90°
−90°
5
0.50.2
+0.2
0
+2
+5
−5
−2
−0.2
+0.5
−0.5
+1
−1
2
110 0
0.2
0.6
0.4
0.8
1.0
1.0
−45°−135°
45°135°
180°0°
4 GHz
100 MHz
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 8 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
IS = 15.9 mA; VS = 5 V; PD=35 dBm; Zo = 50 .P
D = 35 dBm; Zo = 50 .
(1) IS = 19.5 mA; VS = 5.5 V.
(2) IS = 15.9 mA; VS = 5 V.
(3) IS = 12.4 mA; VS = 4.5 V.
Fig 8. Isolation ( s122) as a function of frequency;
typical valu e s. Fig 9. Insertion gain (s212) as a function of
frequency; typical values.
f = 1 GHz; Zo = 50 .
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
f = 2.2 GHz; Zo = 50 .
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
Fig 10. Load power as a function of drive power at
1 GHz; typical values. Fig 11. Load power as a function of drive power at
2.2 GH z; ty pic al values.
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 9 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
Zo = 50 .
(1) IS = 19.5 mA; VS = 5.5 V.
(2) IS = 15.9 mA; VS = 5 V.
(3) IS = 12.4 mA; VS = 4.5 V.
IS = 15.9 mA; VS = 5 V; Zo = 50 .
Fig 12. Noise figure as a function of freq uency; typical
values. Fig 13. Stability factor as a function of frequency;
typical values.
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 10 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
Table 8. Scattering parameters
VS = 5 V; IS = 15.9 mA; PD =
35 dBm; Zo = 50
; Tamb = 25
C.
f (MHz) s11 s21 s12 s22 K-factor
Magnitude
(ratio) Angle
(deg) Magnitude
(ratio) Angle
(deg) Magnitude
(ratio) Angle
(deg) Magnitude
(ratio) Angle
(deg)
100 0.182562 102.7794 12.69581 13.48682 0.029472 28.74955 0.39239 91.48628 1.3
200 0.123465 87.55274 13.13419 5.272917 0.035438 2.202361 0.267851 62.37296 1.2
400 0.107855 58.58513 13.47149 31.7377 0.035299 22.54301 0.227252 24.6455 1.2
600 0.114731 40.14071 13.57901 53.09631 0.033167 43.06353 0.227993 3.493572 1.3
800 0.130176 24.28555 13.67457 73.60665 0.033194 59.63503 0.234967 31.11084 1.3
1000 0.144984 9.657616 13.91705 94.01973 0.029047 76.09972 0.239818 60.54722 1.4
1200 0.160922 7.518892 14.10949 114.55 0.028188 88.34045 0.242141 91.56898 1.4
1400 0.179351 23.35989 14.2808 135.3117 0.025188 101.2729 0.243087 124.5484 1.4
1600 0.20199 41.01349 14.3825 156.7041 0.022257 110.3342 0.24499 158.6224 1.5
1800 0.218268 60.71294 14.26935 178.3843 0.019611 121.0192 0.255598 167.5983 1.7
2000 0.233965 81.48254 14.0667 160.1504 0.018087 127.6765 0.269829 136.117 1.8
2200 0.242904 103.1109 13.83968 138.2379 0.017203 137.8213 0.283613 106.0987 1.9
2400 0.246576 125.52 13.46447 115.7594 0.016318 138.8717 0.29058 77.95189 2.0
2600 0.249069 148.8707 12.74638 93.38644 0.015514 147.6622 0.281505 50.68612 2.2
2800 0.243665 172.646 11.87558 71.02792 0.014954 152.1988 0.25135 24.40624 2.5
3000 0.233266 163.9035 10.94049 50.42722 0.015522 163.8718 0.211425 0.674037 2.7
3200 0.222055 140.7754 10.05626 30.75908 0.016261 170.5637 0.165534 23.9944 2.9
3400 0.207486 117.0531 9.576357 11.98315 0.016664 176.5407 0.118726 46.28101 3.0
3600 0.191654 94.64431 9.199166 7.677643 0.016982 176.9385 0.083354 72.36691 3.2
3800 0.175783 71.9551 8.912598 27.73098 0.017094 165.8227 0.058549 109.9804 3.3
4000 0.163768 49.89436 8.618058 48.90874 0.017414 157.6095 0.055225 163.7132 3.3
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 11 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
9. Package outline
Fig 14. Package outline; SOT363 (SC-88).
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
04-11-08
06-03-16
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Product data sheet Rev. 3 — 8 September 2011 12 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
10. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BGA2716 v.3 20110908 Product data sheet - BGA2716 v.2
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Package outline drawings have been updated to the latest version.
BGA2716 v.2
(9397 750 13292) 20040924 Product data sheet - BGA2716_N v.1
BGA2716_N v. 1
(9397 750 12827) 20040202 Preliminary data sheet - -
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 13 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect , incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconduct ors’ aggregate and cumulati ve liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descripti ons, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
BGA2716 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 8 September 2011 14 of 15
NXP Semiconductors BGA2716
MMIC wideband amplifier
Quick reference data — The Quick reference dat a is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automotive use. It i s neit her qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BGA2716
MMIC wideband amplifier
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 September 2011
Document identifier : BGA2716
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Application examples . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15