MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TX-HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, Inverters, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 8 86 740.25 14 (N)- 20 14 B6 B4 B2 0 62.5 -0.2 20 (P)+ 10.5 B5 B3 B1 W (10) 18.5 V U 11-M4 18.5 18.5 4-5.40.1 18.5 (10) 10 800.25 94 P(+) 13 26 24.8 2 7 4 LABEL 28.2MAX. B1 B2 B3 B5 U V B4 B6 W N(-) 13 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A -IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25C 250 W IB Base current DC 1.8 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Conditions Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 B(E) terminal screw M4 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 0.98~1.47 N*m 10~15 kg*cm 520 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V, Collector open -- -- 60 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.0 V -VCEO Collector-emitter reverse voltage IC=-30A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=30A, VCE=2.5V 750 -- -- -- -- -- 2.0 s Switching time VCC=300V, IC=30A, IB1=60mA, -IB2=0.6A -- -- 8.0 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.5 C/ W Diode part (per 1/6 module) -- -- 2.0 C/ W Conductive grease applied (per 1/6 module) -- -- 0.2 C/ W IC=30A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 DC CURRENT GAIN hFE 80 IB=0.5A IB=200mA 60 40 IB=20mA IB=100mA 20 0 IB=10mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 2.6 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 10 3 7 5 3 2 4.2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 IB=40mA 2 Tj=25C Tj=125C 10-1 10 0 2 3 4 5 7 10 1 IC=30A IC=20A IC=10A 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 VCE(sat) COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 1 VBE(sat) VBE (V) Tj=25C Tj=125C 2 VCE=2.5V 10 2 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=5.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.5V Tj=25C 10 -2 2.2 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 3 2 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 BASE CURRENT IB (A) 10 1 7 5 4 3 2 ts 10 0 7 5 4 3 2 10-1 tf VCC=300V IB1=60mA IB2=-0.6A Tj=25C Tj=125C ton 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 80 Tj=125C COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) ts tf 10 0 7 5 4 3 2 VCC=300V IB1=60mA IC=30A 10-1 10-1 Tj=25C Tj=125C 2 3 4 5 7 10 0 70 50 40 BASE REVERSE CURRENT -IB2 (A) 20 10 VCE (V) 100 1mS 90 500S 80 7 5 3 2 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 0 10 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 DERATING FACTOR (%) DC 100S COLLECTOR-EMITTER VOLTAGE SECOND BREAKDOWN AREA 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 100 200 300 400 500 600 700 800 DERATING FACTOR OF F. B. S. O. A. 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 10 1 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=-3.0A 30 0 2 3 4 5 7 10 1 IB2=-0.6A 60 TIME (s) 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.4 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 VCC=300V IB1=60mA IB2=-0.6A 10 1 Irr trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr 10 0 7 5 3 trr Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/