SUPERTEX INC 7 Supertex inc. i aL P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVo 55 / Fosion) loiony Order Number / Package BVgs (max) (min) TO-39 TO-220 DICE -160V 50 1,.5A VP1116N1 VP1116N2 VP1116N5 VP1116ND -200V 5Q -1.5A VP1120N14 VP1120N2 VP1120N5 VP1120ND Features Advanced DMOS Technology O Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- ri . ize a vertical DMOS structure and Supertex's well-proven sllicon- C1 Low power drive requirement gate manufacturing process. This combination produces devices CD Ease of paralleling with the power handling capabilities of bipolar transistors and with oo the high input impedance and negative temperature coefficient CO Low C,.,and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, a these devices are free from thermal runaway and thermally- O Excellent thermal stability induced secondary breakdown. C1 Integral Source-Drain diode Supertex Vertical DMOS Power FETs are ideally suited to a wide O High input impedance and high gain range of switching and amplifying applications where high break- . down voltage, high input impedance, low input capacitance, and 1 Complementary N- and P-Channel davices fast switching speeds are desired. Applications Package Options (Notes 4 and 2) 1 Motor control 0 Convertors Amplifiers O Switches O Power supply circuits (1 Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) To-89 roe Cy Ss i Absolute Maximum Ratings SS U . 70-220 Drain-to-Source Voltage BVoss 10.3 Drain-to-Gate Voltage BV ngs Gate-to-Source Voltage 20V A RSS 9; Operating and Storage Temperature 55C to +150C Note 1: See Package Outline section for discrete pinouts. Soldering Temperature* 300C Note 2: See Array section for quad pinouts. *Distance of 1.6 mm from case for 10 seconds. O1 pe Parzaess go017?35 4 i i Ss WAVER OMAN RRR S LS 8 WT SUPERTEX INC OL DeEfar77ze5s oool7a.o Thermal Characteristics 7 39-79 = Package 1, (continuous)* f, (pulsed)* Power Dissipation Ge - Oe lon loam @T, = 25C "Cw Crw TO-3 2.5A -7.5A 75W 50 1.6 -2.5A -7.5A TO-39 -0.8A -3A 6W 125 20.8 0.84 3A TO-220 -1.8A -7A 45W 70 27 1.8A -7A * Ip (continuous) Is limited by max rated T,. Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BVogs Drain-to-Source VP1120 | -200 V 1, = SMA, Veg = 0 Breakdown Vollage vPi116 | -160 D as Vegsan Gate Threshold Voltage 1.5 3.5 V Vas = Vos: Ip = OMA AV esany Change In Vegan With Temperature 3.5 6 | mvc I, = SMA, Veg = Vo5 lass Gate Body Leakage -100 nA Vag = t20V, Vpg = 0 toss -560 BA Veg = 9, Vpg = Max Rating Zero Gate Voltage Drain Current 10 mA Vag = 9, Vg = 0.8 Max Rating T, = 125C loon) ON-State Drain Current 0.5 1.5 A Vag = 5V; Vos = -25V 15 4 Ves = 10V, Vog = -25V Rosion) Static Drain-to-Source 3.3 7 2 Vag = SV; Ip = -0.5A ON-State Resistance 3 5 Veg = -10V, |, = -1.0A ARpsion | Change in Rogoy With Temperature 0.8 12 ) %iC Ip = -1.0A, Veg = -10V Ges Forward Transconductance 0.5 | 0.75 0 Vpg = 725V, |p = 710A Cigg Input Capacitance 300 | 350 C. Common Source Output Capaci Ves = 01 Vos = -28V Oss put Capacitance 60 80 pF f=1MHz Cass Reverse Transfer Capacitance 10 25 t Turn-ON Delay Time . 8 25 en Vop = -25V t. Rise Time 4 20 t Turn-OFF Delay Time aa | 40}; In =1.0A OFF) ul y R, = 50Q t, Fall Time 8 20 Ven Diode Forward Voltage Drop 1.2 | -2.0 Vv log = 71.04, Vag = 0 t Reverse Recovery Time 350 ns le, = -1.0A, Veg = 0 Tt SD Gs Note 1: AliD.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 80% 10% \ PULSE ; Input 7 ony tor ! GENERATOR SCOPE D.U.T. fgiON) , tr ta(OFF), Uf | | I Output 10% Ci0% | oN Ke | oe = = = 9-54 SUPERTEX INC 01 vefsez3ess ooni7a7 2 wee wu . VP11C Typical Performance Curves LSPS Output Characteristics Saturation Characteristics 5 2.0 Ves = = 10V 4 1.6 a a iw 3 tr 1.2 w Ww a a Ss = gs 2 $ OB a 8 1 04 Q oO 0 10 20 30 40 50 0 2 4 6 8 10 Vps (VOLTS) Vps (VOLTS! Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature T, = -55C 25 g a s E ii < 3B = e Qo Q 1 2 3 4 5 o 25 50 76 400 125 150 ip (AMPERES) Te (PC) Maximum Rated Safe Operating Area Thermal Response Characteristics 3 1,00 39 a To = 25C . Zz o8 = tc ig & 0.6 a g a z 2 e < a oe 8 0.4 c a << = = a2 To = 25C w - I F 1 10 100 1000 oO Vos (VOLTS) .001 .01 a 1 10 Pulsed Condition: 10ms, 2% duty cycle, tp (SECONDS) 9-55 Posen estan SUPERTEX INC 01 pe Baz7ge9s OOO173& 4 J VP11C 7-37-17 BVDSS Variation with Temperature ON - Resistance Vs. Drain Current 1.15 1.10 a Ww = N g -J < 1.05 3 & = 3 z < 1,00 R 8 E > oO 0,95 0,80 -60 0 50 100 150 0 16 3.00048 60 78 Ty PC) IDS (AMPERES) Transfer Characteristics Vith) and RDS Variation with Temperature 5 2.2 Tas 4 18 4 3 N = N 3 8 3 z 14 o 2 Eg 3 5 2 s 2 0 2 2 = 9S 8 a 9 iv ' > 0.6 0.2 0 2 4 6 8 10 -60 0 50 100 150 VGs (VOLTS) Ty PC) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 600 l f =MHz 450 g - < g & 300 ciss a 5 2 2 8 & > o 150 ~S_ coss CRSS 0 + 0 10 20 30 40 0 1 2 3 4 5 Vos (VOLTS) Qg (NANOCOULOMBS}