1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features * * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion SOD-123 A B G Mechanical Data * * * * * Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D 1.35 0.55 Typical E Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code Type Code: SB Weight: 0.01 grams (approx.) Maximum Ratings E D G C H J 0.25 H 0.15 Typical J -- 0.10 All Dimensions in mm @ TA = 25C unless otherwise specified Characteristic Symbol RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @ t 1.0s @ t = 10ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic 1N6263W Unit VRWM VR 60 V VR(RMS) 42 V IF 15 mA IFSM 50 2.0 mA A VRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Pd 400 mW RJA 375 K/W Tj, TSTG -65 to +175 C @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Reverse Leakage Current IRM 200 nA VR = 50V Forward Voltage Drop VFM 0.41 1.0 V IF = 1.0mA IF = 15mA Junction Capacitance Cj 2.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr 1.0 ns IF = IR = 5.0mA Irr = 0.1 x IR, RL = 100 Note: Test Condition 1. Valid provided that terminals from the case are maintained at ambient temperature. DS11014 Rev. B-2 1 of 1 1N6263W