©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BC327/328
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327
: BC328 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC327
: BC328 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -800 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -10mA, IB=0 -45
-25 V
V
BVCES Collect or-Em itter Break down Voltage
: BC327
: BC328
IC= -0.1mA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICES Collector Cut-off Current
: BC327
: BC328 VCE= -45V, VBE=0
VCE= -25V, VBE=0 -2
-2 -100
-100 nA
nA
hFE1
hFE2
DC Current Gain
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA 100
40 630
VCE (sat) Collector-Emitter Satu ration Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 1 00 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-
BC327/328
Switching and Amplifier Applications
Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
BC327/328
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Static Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
-1 -2 -3 -4 -5
-0
-100
-200
-300
-400
-500
PT = 600mW
I
B
= - 3.0mA
I
B
= - 2.0mA
I
B
= - 3.5mA
IB = - 1.0mA
I
B
= - 1.5mA
IB = - 0.5mA
I
B
= - 4.0mA
I
B
= - 2.5mA
I
B
= - 4.5mA
I
B
= - 5.0mA
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10 -20 -30 -40 -50
-4
-8
-12
-16
-20
PT = 600mW
IB = - 80
µ
A
IB = - 70
µ
A
IB = - 60
µ
A
IB = - 50
µ
A
IB = - 40
µ
A
I
B
= - 30µA
IB = - 20µA
I
B
= - 10
µ
A
IB = 0
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 PULSE
- 1.0V
VCE = - 2.0V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-0.01
-0.1
-1
-10
IC = 10 IB
PULSE
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
-0.1
-1
-10
-100
-1000
VCE = -1V
PULSE
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
10
100
1000
VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC327/328
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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Definition of Terms
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