BAV199LT1G, SBAV199LT1G, SBAV199LT3G Dual Series Switching Diode http://onsemi.com Features Low Leakage Current Applications Medium Speed Switching Times AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Repetitive Peak Reverse Voltage VRRM 70 Vdc Average Rectified Forward Current (Note 1) (Averaged Over Any 20 ms Period) IF(AV) 715 mAdc Repetitive Peak Forward Current IFRM 450 mAdc Non-Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Adc 2.0 1.0 0.5 Total Device Dissipation FR-5 Board (Note 1), TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2), TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 RqJA TJ, Tstg PD RqJA PD ANODE 1 CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM JY M G G JY = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic CASE 318 SOT-23 STYLE 11 *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping BAV199LT1G mW mW/C SOT-23 (Pb-Free) 3,000 / Tape & Reel SBAV199LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel 417 C/W SBAV199LT3G -65 to +150 C SOT-23 (Pb-Free) 10,000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 8 1 Publication Order Number: BAV199LT1/D BAV199LT1G, SBAV199LT1G, SBAV199LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max 70 - - - 5.0 80 - 2.0 - - - - 900 1000 1100 1250 - 3.0 Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage (I(BR) = 100 mAdc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr Vdc nAdc pF mVdc ms 820W +10 V 2.0 k 100 mH tr 0.1 mF IF tp IF t trr 10% t 0.1 mF 90% DUT 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 1.2 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1,000 100 150C 10 25C -55C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 TA = 25C 1.0 0.8 0.6 0.4 0.2 0 1.2 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Capacitance http://onsemi.com 2 70 80 BAV199LT1G, SBAV199LT1G, SBAV199LT3G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE q 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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