Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING
0.2+/-0.05
0.2+/-0.05
0.9+/-0.1
INDEX MARK
(Gate)
6.0+/-0.15
4.9+/-0.15
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1.0+/-0.05
(0.25)
2
3
1
3.5+/-0.05
2.0+/-0.05
(0.25)
(0.22) (0.22)
DESCRIPTION
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vds=0V +/-20 V
Pch Channel dissipation Tc=25°C 21.9 W
Pin Input Power Zg=Zl=50Ω 0.1 W
ID Drain Current - 1.5 A
Tch Junction temperature - 150 °C
Tstg Storage temperature - -40 to +125 °C
Rth j-c Thermal resistance Junction to case 5.7 °C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Drain cutoff current VDS=17V, VGS=0V - - 100 uA
IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA
Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 1.8 3 V
Pout1 Output power 2 3 - W
ηD1 Drain efficiency
VDD=7.2V, Pin=50mW,
f=175MHz Idq=200mA 55 65 - %
Pout2 Output power 2 3 - W
ηD2 Drain efficiency
VDD=7.2V, Pin=50mW,
f=520MHz Idq=200mA 50 65 - %
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=175MHz,Idq=200mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Load VSWR tolerance
VDD=9.2V,Po=2W(Pin Control)
f=520MHz,Idq=200mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note: Above parameters, ratings, limits and conditions are subject to change.
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20
Vds(V)
Ciss(pF)
Ta=+25°C
f=1MHz
Vds VS . Coss CHARACTERISTICS
0
10
20
30
40
0 5 10 15 20
Vds(V)
Coss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
0
1
2
3
4
5
6
0 5 10 15 20
Vds(V)
Crss(pF)
Ta=+25°C
f=1MHz
Vgs-Ids CHARACTERISTICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
012345
Vgs(V)
Ids(A),GM(S)
Ta=+25°C
Vds=7.2V
Ids
GM
Vds-Ids CHARACTERIS TICS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0246810
Vds(V)
Ids(A)
Ta=+25°C Vgs=9V
Vg s=8V
Vg s=7V
Vgs=6V
Vg s=5V
Vgs=4V
Vgs=3V
Vgs=10V
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
0
5
10
15
20
25
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
CHANNEL DISSIPATION Pch(W
)
...
On PCB (*1)
with through hole
and Heat-sink
On heat-sink
*1:The mater ial of the PCB
Glass epoxy ( t=0.8 mm)
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
0
5
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
20
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
@f=175MHz
0.0
1.0
2.0
3.0
4.0
0 20 40 60 80 100
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Pin-Po CHARACTERISTICS
@f=520MHz
0
5
10
15
20
25
30
35
40
-10 -5 0 5 10 15 20
Pin(dBm)
Po(dBm) , Gp(dB) ,
Idd(A)
20
30
40
50
60
70
80
90
100
ηd(%)
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
@f=520MHz
0.0
1.0
2.0
3.0
4.0
0 20 40 60 80 100
Pin(mW)
Pout(W) , Idd(A)
20
40
60
80
100
ηd(%)
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Vdd-Po CHARACTERISTICS
@f=175MHz
0
1
2
3
4
5
6
7
35791113
Vdd(V)
Po(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Idd(A)
Po
Idd
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Vdd-Po CHARACTERISTICS
@f=520MHz
0
1
2
3
4
5
6
7
35791113
Vdd(V)
Po(W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Idd(A)
Po
Idd
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
5/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TEST CIRCUIT(f=175MHz)
TEST CIRCUIT(f=520MHz)
5mm
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8mm
Note:Board material-Teflon substrate
C1,C2:1000
p
F,0.0022uF in
p
arallel
C2
L3
12mm
68OHM
19mm
RF-OUT
C1 10uF,50V
33mm 12mm
3mm
13.5mm
L1: Enameled wire 5Turns,D:0.43mm,2.46mmO.D
240pF
4.7kOHM
15mm
Vgg Vdd
62pF
RF-IN
62pF
3mm
39pF
43pF
3mm
RD02MVS1
11.5mm
10pF
10pF
L2: Enameled wire 3Turns,D:0.43mm,2.46mmO.D
L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
L1
L2
175MHz
6.5mm
5mm
5mm
RD02MUS1B
Micro strip line width=2.2mm/50OHM,er:2.7,t=0.8m
m
Note:Board m aterial-Teflon substrate
C1,C2:1000pF,0.022uF in parallel
C2
L1
40.5mm
68OHM
19mm
RF-OUT
C1 10uF,50V
20mm 2mm 10mm
11mm
4.5mm
L1: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
240pF
4.7kOHM
19mm
Vgg Vdd
62pF
RF-IN
62pF
26.5mm
43pF
6pF 18pF
3mm
RD02MUS1
520MHz
B
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
6/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin*
175MHz Zout*
175MHz Zin* Zout*
Zo=50
Ω
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88
Zout*=6.83+j5.21
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin* Zout*
Zo=50
Ω
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=1.20+j5.47
Zout*=5.56+j1.31
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zin*
520MHz Zout*
output impedance
output impedance
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
7/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1B S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)
Freq.
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.847 -132.5 16.923 100.2 0.042 8.9 0.621 -118.8
135 0.828 -144.6 12.806 90.7 0.042 -0.1 0.598 -130.5
150 0.824 -148.1 11.555 87.5 0.042 -3.3 0.591 -133.7
175 0.817 -152.8 9.864 82.8 0.042 -7.6 0.590 -138.0
200 0.816 -156.2 8.579 78.6 0.041 -11.2 0.594 -141.2
250 0.816 -161.2 6.712 71.2 0.039 -17.6 0.609 -145.5
300 0.820 -164.9 5.436 64.9 0.038 -23.0 0.628 -148.8
350 0.827 -167.6 4.501 59.3 0.036 -28.2 0.653 -151.2
400 0.835 -169.9 3.813 54.0 0.034 -32.2 0.675 -153.5
450 0.844 -171.9 3.257 49.3 0.032 -36.5 0.699 -155.8
500 0.854 -173.6 2.823 44.9 0.031 -39.8 0.723 -157.7
520 0.858 -174.3 2.668 43.1 0.030 -41.1 0.732 -158.4
527 0.859 -174.7 2.613 42.6 0.030 -41.9 0.735 -158.6
550 0.862 -175.3 2.458 40.9 0.029 -43.2 0.743 -159.6
600 0.871 -176.7 2.161 37.1 0.027 -46.6 0.763 -161.5
650 0.878 -178.0 1.911 33.5 0.025 -49.5 0.781 -162.9
700 0.883 -179.4 1.701 30.4 0.024 -51.5 0.798 -164.6
750 0.890 179.4 1.522 27.3 0.022 -54.4 0.811 -166.1
800 0.897 178.3 1.368 24.4 0.021 -56.1 0.824 -167.7
850 0.899 177.0 1.238 21.7 0.019 -58.7 0.836 -169.0
900 0.905 176.0 1.123 19.3 0.018 -59.4 0.845 -170.3
950 0.907 175.1 1.025 17.1 0.016 -60.7 0.853 -171.4
1000 0.913 174.3 0.937 14.9 0.015 -62.1 0.861 -172.5
1050 0.915 173.2 0.859 12.9 0.013 -64.4 0.870 -173.5
1100 0.918 172.6 0.794 11.0 0.012 -64.9 0.874 -174.6
S11 S21 S12 S22
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice tha
t
have a possibility to receive a burn to touch the operating product directly or touch the product until cold
after switch off. At the near the product,do not place the combustible material that have possibilities to aris
e
the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notic
e
that do not leakage the unnecessary electric wave and use this products without cause damage for human
and property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human
and electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2. RD series products (RF power transistors) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products ar
e
highly reliable for their designed purpose, they are not manufactured under a quality assurance testing
protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical
communications elements. Examples of critical communications elements would include transmitters fo
r
base station applications and fixed station applications that operate with long term continuous transmission
and a higher on-off frequency during transmitting, especially for systems that may have a high impact t
society.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefor
e
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed
(fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case o
f
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices,
the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin
due to extreme short current flow between the drain and the source of the device. These results causes in
fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to th
e
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified
in any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the las
t
page of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1B 17 Aug 2010
9/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Keep safety first in your circuit designs !
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best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other
rights, belonging to Mitsubishi Electric Corporation or a third party.
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