TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL M O SFET
Reference MIL-PRF-19500/603
T4-LDS-0121 Rev. 2 (101017) Page 1 of 5
DEVICES LEVELS
2N7268 2N7268U JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 100 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
T
C = +25°C ID1 34.0 Adc
Continuous Drain Current
T
C = +100°C ID2 21.0 Adc
Max. Power Dissipation Ptl 150
(1) W
Drain to Source On State Resistance Rds(on) 0.065
(2) Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 12Vdc, ID = 21.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200 nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 100V, Tj = +125°C
VGS = 0V, VDS = 80V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
µAdc
mAdc
mAdc
Static Drain-Source On-State Resistance
VGS = 12V, ID = 21.0A pulsed
VGS = 12V, ID = 34.0A pulsed
Tj = +125°C
VGS = 12V, ID = 21.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.065
0.070
0.132
Ω
Ω
Ω
Diode Forward Voltage
VGS = 0V, ID = 34.0A pulsed
VSD 1.4 Vdc
TO-254AA
JANSR2N7268, JANSF2N7268
See Figure 1
U-PKG (SMD -1 )
(TO-267AB)
JANSR2N7268U, JANSF2N7268U
See Figure 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL M O SFET
Reference MIL-PRF-19500/603
T4-LDS-0121 Rev. 2 (101017) Page 2 of 5
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 12V, ID = 34.0A
VDS = 50V
Qg(on)
Qgs
Qgd
160
35
65
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 34.0A, VGS = 12Vdc,
Gate drive impedance = 2.35Ω,
VDD = 50Vdc
td(on)
tr
td(off)
tf
45
190
170
130
ns
Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V,
IF = 34.0A trr 570 ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc V(BR)DSS 100 Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA MSR
VDS ≥ VGS, ID = 1.0mA MSF
VGS(th)1
VGS(th)1
2.0
1.25
4.0
4.5
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100 nAdc
Drain Current
VGS = 0V, VDS = 80V MSR
VGS = 0V, VDS = 80V MSF
IDSS1
25
50
µAdc
Static Drain-Source On-State Voltage
VGS = 12V, ID = 21.0A pulsed MSR
VGS = 12V, ID = 21.0A pulsed MSF
VDS(on)
1.365
1.89
Vdc
Diode Forward Voltage
VGS = 0V, ID = 34.0A pulsed
VSD 1.4 Vdc
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL M O SFET
Reference MIL-PRF-19500/603
T4-LDS-0121 Rev. 2 (101017) Page 3 of 5
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7268 device was completed by similarity of die structure to the 2N7261. The
2N7261 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established
using the elements, LET, range, and Total Energy conditions as shown:
2N7268 (2N7261)
0
10
20
30
40
50
60
70
80
90
100
110
-25-20-15-10-50Gate Bia s, V
Dr ain Bias, V
TAMU Ar
LET=8.3
Range =192um
Total Energy=531MeV
TAMU Kr
LET=27.8
Range =134um
Total Energy=1032MeV
TAMU Ag
LET=42.2
Range =119um
Total Energy=1289MeV
TAMU Au
LET=85.4
Range =118um
Total Energy=2247MeV
It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons
to other datasets should not be based on LET alone. Please consult factory for more information.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL M O SFET
Reference MIL-PRF-19500/603
T4-LDS-0121 Rev. 2 (101017) Page 4 of 5
Figure 1: Case Outline and Pin Configuration for JANSR2N7268 & JANSF2N7268
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL M O SFET
Reference MIL-PRF-19500/603
T4-LDS-0121 Rev. 2 (101017) Page 5 of 5
NOTES: Dimensions
1. Dimensions are in inches. Symbol SMD-1
2. Millimeters are given for general information only. Inches Millimeters
3. The lid shall be electrically isolated from the drain, gate and Min Max Min Max
source. BL .620 .630 15.75 16.00
4. In accordance with ASME Y14.5M, diameters are equivalent to BW .445 .455 11.30 11.56
φx symbology. CH .142 3.60
LH .010 .020 0.26 0.50
LL1 .410 .420 10.41 10.67
LL2 .152 .162 3.86 4.11
LS1 .210 BSC 5.33 BSC
LS2 .105 BSC 2.67 BSC
LW1 .370 .380 9.40 9.65
LW2 .135 .145 3.43 3.68
Q1 .030 0.76
Q2 .035 0.89
Term 1 Drain
Term 2 Gate
Term 3 Source
Figure 2: Case Outline and Pin Configuration for JANSR2N7268U & JANSF2N7268U
