BZX85-Series
Document Number 85607
Rev. 1.8, 31-May-07
Vishay Semiconductors
www.vishay.com
1
17173
Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• For use in stabilizing and clipping circuits
with high power rating
• The Zener voltages are graded according to the
international E 24 standard. Replace suffix "C"
with "B" for ± 2 % tolerance
• Lead (Pb)-free component
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: DO41 Glass case
Weight: approx. 310 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/5 k per 13" reel (52 mm tape), 25 k/box
TAP/5 k per ammo pack (52 mm tape), 25 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Parameter Test condition Symbol Value Unit
Zener current
(see Table "Electrical Characteristics")
Power dissipation Ptot 1.31) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 1101) K/W
Junction temperature Tj175 °C
Storage temperature Tstg - 55 to + 175 °C
e2
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2
Document Number 85607
Rev. 1.8, 31-May-07
BZX85-Series
Vishay Semiconductors
Electrical Characteristics
1) Measured with pulses tp = 5 ms
2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
3) Measured with f = 1 kHz
Partnumber Zener Voltage
Range 1)
Dynamic Resistance Temperature
Coefficient
of
Zener Voltage
Reverse Leakage
Current
Admissible Zener
Current2)
VZ at IZT rZT3) at IZT rZK3) at IZK αVZ at IZ = IZT at IRat VRIZ
VΩmA ΩmA %/°C µA VmA
min max min max
BZX85C2V7 2.5 2.9 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 360
BZX85C3V0 2.8 3.2 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330
BZX85C3V3 3.1 3.5 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300
BZX85C3V6 3.4 3.8 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290
BZX85C3V9 3.7 4.1 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280
BZX85C4V3 4 4.6 < 13 50 < 500 1 - 0.05 0.01 < 3 1 250
BZX85C4V7 4.4 5 < 13 45 < 600 1 - 0.03 0.04 < 3 1 215
BZX85C5V1 4.8 5.4 < 10 45 < 500 1 - 0.01 0.04 < 1 1.5 200
BZX85C5V6 5.2 6 < 7 45 < 400 1 0 0.045 < 1 2 190
BZX85C6V2 5.8 6.6 < 4 35 < 300 1 0.01 0.055 < 1 3 170
BZX85C6V8 6.4 7.2 < 3.5 35 < 300 1 0.015 0.06 < 1 4 155
BZX85C7V5 7 7.9 < 3 35 < 200 0.5 0.02 0.065 < 1 4.5 140
BZX85C8V2 7.7 8.7 < 5 25 < 200 0.5 0.03 0.07 < 1 6.2 130
BZX85C9V1 8.5 9.6 < 5 25 < 200 0.5 0.035 0.075 < 1 6.8 120
BZX85C10 9.4 10.6 < 7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105
BZX85C11 10.4 11.6 < 8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97
BZX85C12 11.4 12.7 < 9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88
BZX85C13 12.4 14.1 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79
BZX85C15 13.8 15.6 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71
BZX85C16 15.3 17.1 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66
BZX85C18 16.8 19.1 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62
BZX85C20 18.8 21.2 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56
BZX85C22 20.8 23.3 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52
BZX85C24 22.8 25.6 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47
BZX85C27 25.1 28.9 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41
BZX85C30 28 32 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36
BZX85C33 31 35 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33
BZX85C36 34 38 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30
BZX85C39 37 41 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28
BZX85C43 40 46 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26
BZX85C47 44 50 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23
BZX85C51 48 54 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21
BZX85C56 52 60 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19
BZX85C62 58 66 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16
BZX85C68 64 72 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15
BZX85C75 70 80 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14
BZX85C82 77 87 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12
BZX85C91 85 96 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10
BZX85C100 96 106 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4
BZX85-Series
Document Number 85607
Rev. 1.8, 31-May-07
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
1) Measured with pulses tp = 5 ms
2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
3) Measured with f = 1 kHz
Partnumber Zener Voltage
Range1)
Dynamic Resistance Temperature
Coefficient
of
Zener Voltage
Reverse Leakage
Current
Admissible Zener
Current2)
VZ at IZT rZT3) at IZT rZK3) at IZK αVZ at IZ = IZT at IRat VRIZ
VΩmA ΩmA %/°C µA VmA
min max min max
BZX85B2V7 2.64 2.76 < 20 80 < 400 1 - 0.08 - 0.05 < 150 1 360
BZX85B3V0 2.94 3.06 < 20 80 < 400 1 - 0.08 - 0.05 < 100 1 330
BZX85B3V3 2.24 3.36 < 20 80 < 400 1 - 0.08 - 0.05 < 40 1 300
BZX85B3V6 3.53 3.67 < 20 60 < 500 1 - 0.08 - 0.05 < 20 1 290
BZX85B3V9 3.82 3.98 < 15 60 < 500 1 - 0.07 - 0.02 < 10 1 280
BZX85B4V3 4.21 4.39 < 13 50 < 500 1 - 0.05 0.01 < 3 1 250
BZX85B4V7 4.61 4.79 < 13 45 < 600 1 - 0.03 0.04 < 3 1 215
BZX85B5V1 5 5.2 < 10 45 < 500 1 - 0.01 0.04 < 1 1.5 200
BZX85B5V6 5.49 5.71 < 7 45 < 400 1 0 0.045 < 1 2 190
BZX85B6V2 6.08 6.32 < 4 35 < 300 1 0.01 0.055 < 1 3 170
BZX85B6V8 6.66 6.94 < 3.5 35 < 300 1 0.015 0.06 < 1 4 155
BZX85B7V5 7.35 7.65 < 3 35 < 200 0.5 0.02 0.065 < 1 4.5 140
BZX85B8V2 8.04 8.36 < 5 25 < 200 0.5 0.03 0.07 < 1 6.2 130
BZX85B9V1 8.92 9.28 < 5 25 < 200 0.5 0.035 0.075 < 1 6.8 120
BZX85B10 9.8 10.2 < 7 25 < 200 0.5 0.04 0.08 < 0.5 7.5 105
BZX85B11 10.8 11.2 < 8 20 < 300 0.5 0.045 0.08 < 0.5 8.2 97
BZX85B12 11.8 12.2 < 9 20 < 350 0.5 0.045 0.085 < 0.5 9.1 88
BZX85B13 12.7 13.3 < 10 20 < 400 0.5 0.05 0.085 < 0.5 10 79
BZX85B15 14.7 15.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 11 71
BZX85B16 15.7 16.3 < 15 15 < 500 0.5 0.055 0.09 < 0.5 12 66
BZX85B18 17.6 18.4 < 20 15 < 500 0.5 0.06 0.09 < 0.5 13 62
BZX85B20 19.6 20.4 < 24 10 < 600 0.5 0.06 0.09 < 0.5 15 56
BZX85B22 21.6 22.4 < 25 10 < 600 0.5 0.06 0.095 < 0.5 16 52
BZX85B24 23.5 24.5 < 25 10 < 600 0.5 0.06 0.095 < 0.5 18 47
BZX85B27 26.5 27.5 < 30 8 < 750 0.25 0.06 0.095 < 0.5 20 41
BZX85B30 29.4 30.6 < 30 8 < 1000 0.25 0.06 0.095 < 0.5 22 36
BZX85B33 32.3 33.7 < 35 8 < 1000 0.25 0.06 0.095 < 0.5 24 33
BZX85B36 35.3 36.7 < 40 8 < 1000 0.25 0.06 0.095 < 0.5 27 30
BZX85B39 38.2 39.8 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 30 28
BZX85B43 42.1 43.9 < 50 6 < 1000 0.25 0.06 0.095 < 0.5 33 26
BZX85B47 46.1 47.9 < 90 4 < 1500 0.25 0.06 0.095 < 0.5 36 23
BZX85B51 50 52 < 115 4 < 1500 0.25 0.06 0.095 < 0.5 39 21
BZX85B56 54.9 57.1 < 120 4 < 2000 0.25 0.06 0.095 < 0.5 43 19
BZX85B62 60.8 63.2 < 125 4 < 2000 0.25 0.06 0.095 < 0.5 47 16
BZX85B68 66.6 69.4 < 130 4 < 2000 0.25 0.055 0.095 < 0.5 51 15
BZX85B75 73.5 76.5 < 135 4 < 2000 0.25 0.055 0.095 < 0.5 56 14
BZX85B82 80.4 83.6 < 200 2.7 < 3000 0.25 0.055 0.095 < 0.5 62 12
BZX85B91 89.2 92.8 < 250 2.7 < 3000 0.25 0.055 0.095 < 0.5 68 10
BZX85B100 98 102 < 350 2.7 < 3000 0.25 0.055 0.095 < 0.5 75 9.4
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Document Number 85607
Rev. 1.8, 31-May-07
BZX85-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Pulse Thermal Resistance vs. Pulse Duration
Figure 2. Dynamic Resistance vs. Zener Current
Figure 3. Dynamic Resistance vs. Zener Current
10-5 10-4 10-3 10-2 10-1 110
s
103
102
10
1
°C/W
2
5
4
3
2
5
4
3
2
5
4
3
rthA
tP18458
tP
v =
T
PI
___
T
tP
0.5
0.2
0.1
0.05
0.02
0.01
0.1
2
110
mA
10
3
10
2
10
Ω
2
5
4
3
r
zj
I
Z18459
54
3254
3
56
43
7
2
5
4
3
7
1
2
10 100
mA
100
10
1
Ω
2
5
4
3
r
zj
I
Z18460
54
3254
3
7
2
5
4
3
7
43
36
30
24
22
18
Figure 4. Thermal Resistance vs. Lead Length
Figure 5. Admissible Power Dissipation vs. Ambient Temperature
Figure 6. Dynamic Resistance vs. Zener Current
010
20 30 mm
200
100
0
°C/W
RthA
lead length 18461
max.
typ.
0 100 200 °C
2
1
0
W
Ptot
Tamb18462
1
2
10 100
mA
10
3
10
2
1
Ω
r
zj
I
Z18463
54
3254
3
2
5
4
3
2
5
4
3
2
5
4
3
10
77
5V1
4V3
18
12
10
7V5
6V2
BZX85-Series
Document Number 85607
Rev. 1.8, 31-May-07
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in millimeters (inches)
Figure 7. Breakdown Characteristics
Figure 8. Breakdown Characteristics
0123456789 1011 12131415 V
0
40
80
120
160
200
240
mA
IZ
VZ
Tj = 25 °C
4V7
3V9
5V6
6V8
8V2
10
12
18456
0 5 101520253035
40 45 50 V
10
20
30
40
50
60
mA
IZ
VZ18457
Tj = 25 °C
15 18
22
27
33
39
47
0
94 9368
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Document Number 85607
Rev. 1.8, 31-May-07
BZX85-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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