QS6M4
Transistors
Rev.B 1/5
2.5V Drive
Nch+Pch
MOSFET
QS6M4
zStructure
Silicon P-channel MOSFET
Silicon N-channel MOSFET
zFeatures
1) The QS6M4 combines Pch MOSFET with a Nch
MOSFET in a single TSMT6 package.
2) Low on-state resistance w ith a fa st switching.
3) Low voltage dri ve (2.5V).
zApplications
Load switch , inverter
zDimensions (Unit : mm)
Each lead has same dimensions
TSMT6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
2.8
1.6
1.9
2.9
0.950.95
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
Abbreviated symbol : M04
zPackaging specifications
Package
Code Taping
Basic ordering unit (pieces)
QS6M4
TR
3000
Type
zA bsolute maximum ratings (Ta=25°C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
°CTch
°CTstg
Nchannel
150
−55 to +150
Pchannel
Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
ContinuousSource current
(Body diode) Pulsed
∗1
V30 V±12 A±1.5 A±6.0 A0.8 A6.0
W / TOTAL
−20
±12
±1.5
±6.0
−0.75
−6.0
1.25
∗1
∗2
W / ELEMENT
0.9
zEquivalent circuit
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2∗2
∗1
∗1
(1)
(6) (5) (4)
(2) (3)
zThermal resistance
Rth (ch-a) 100
Parameter Symbol Limits Unit
Channel to ambient °C / W / TOTAL
139
°C / W / ELEMENT
∗
∗ Mounted on a ceramic board
QS6M4
Transistors
Rev.B 2/5
zElectrical characteristics (Ta=25°C)
<T r1. N-ch MOSFET>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
=±12V / V
DS
=0V
V
DD
15V
30 −−VI
D
=1mA / V
GS
=0V
−−1µAV
DS
=30V / V
GS
=0V
0.5 −1.5 V V
DS
=10V / I
D
=1mA
−170 230 I
D
=1.5A / V
GS
=4.5V
−180 245 mΩI
D
=1.5A / V
GS
=4.0V
−260 360 I
D
=1.0A / V
GS
=2.5V
1.0 −−SV
DS
=10V / I
D
=1.0A
−80 −pF V
DS
=10V
−25
15 −pF V
GS
=0V
−7−pF f=1MHz
V
GS
=4.5V
R
L
=15Ω / R
G
=10Ω
−18 −ns
−15 −ns
−15 −ns
−1.6 −ns
−0.5 −nC
−0.9 −nC V
GS
=4.5V R
L
=10Ω
R
G
=10Ω
−−nC I
D
=1.5A
∗
∗
∗
∗
∗
∗
∗
∗
∗
I
D
=1A, V
DD
15V
zBody diode characteristics (Source-Drain)
<T r1. N-ch MOSFET>
V
SD
−−1.2 V I
S
=3.2A / V
GS
=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
∗
Forward voltage
∗Pulsed
QS6M4
Transistors
Rev.B 3/5
zElectrical characteristics (Ta=25°C)
<T r2. P-ch MOSFET>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
= ±12V / V
DS
=0V
V
DD
−15V
−20 −−VI
D
= −1mA / V
GS
=0V
−−−1µAV
DS
= −20V / V
GS
=0V
−0.7 −−2.0 V V
DS
= −10V / I
D
=−1mA
−155 215 I
D
= −1.5A / V
GS
= −4.5V
−170 235 mΩI
D
= −1.5A / V
GS
= −4.0V
−310 430 I
D
= −0.75A / V
GS
= −2.5V
1.0 −−SV
DS
= −10V / I
D
= −0.75A
−270 −pF V
DS
= −10V
−40
35 −pF V
GS
=0V
−10 −pF f=1MHz
V
GS
= −4.5V
R
L
=20Ω / R
G
=10Ω
−12 −ns
−45 −ns
−20 −ns
−3.0 −ns
−0.8 −nC
−0.85 −nC V
GS
= −4.5V
−−nC I
D
= −1.5A
I
D
= −0.75A, V
DD
−15V
R
L
=10Ω
R
G
=10Ω
zBody diode characteristics (Source-Drain)
<T r2. P-ch MOSFET>
VSD −−−1.2 V IS= −0.75A / VGS=0V
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage
QS6M4
Transistors
Rev.B 4/5
N-ch
zElectrical characteristic curves
1
10
100
1000
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (A)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Ciss
Coss
Crss
1
10
100
1000
0.01 0.1 1 10
DRAIN CURRENT : ID (A)
SWITCHING TIME : t (ns)
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0 0.5 1.0 1.5 2.0
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=1.5A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
0.001
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.4
Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0123456789
GATE-SOURCE VOLTAGE : VGS (V)
10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
ID=0.75A
ID=1.5A
0.01
0.1
1
10
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
V
GS
=4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
V
GS
=4.0V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
0.1
0.01 0.1 1 10
V
GS
=2.5V
Pulsed
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
QS6M4
Transistors
Rev.B 5/5
P-ch
zElectrical characteristic curves
10
100
1000
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
Crss
Coss
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
10
100
1000
0.01 0.1 1 10
DRAIN CURRENT : −I
D
(A)
SWITCHING TIME : t (ns)
Ta=25°C
V
DD
= −15V
V
GS
= −4.5V
R
G
=10Ω
Pulsed
t
d (off)
t
d (on)
t
r
t
f
Fig.2 Switching Characteristics
Ta=25°C
VDD= −15V
ID= −1.5A
RG=10Ω
Pulsed
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.3
Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −VGS (V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
V
DS
= −10V
Pulsed
Fig.4
Typical Transfer Characteristics
Ta=75°C
Ta= −25°C
Ta=25°C
Ta=125°C
024681012
GATE-SOURCE VOLTAGE : −VGS (V)
0
100
200
300
400
500
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
ID= −1.5A
ID= −0.75A
0.0 0.5 1.0 1.5 2.0
SOURCE-DRAIN VOLTAGE : −V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT : −I
S
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
Ta=25°C
V
GS
=0V
Pulsed
10
100
1000
10000
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
0.1 1 10
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
V
GS
=
−
4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.1 1 10
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
V
GS
=
−
4V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
10000
0.1 1 10
DRAIN CURRENT : −I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(mΩ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
V
GS
=
−
2.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Copyright © 2007 ROHM CO.,LTD.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix
