1N5711UB and 1N5712UB (CC, CA, & D) Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military grade qualifications for high-reliability applications. Unidirectional as well as doubler, common anode and common cathode polarities are available. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of JEDEC registered 1N5711, 1N5712 numbers. * JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on "1N" numbers only. * RoHS compliant by design. (See Part Nomenclature for all available options). UB Package Also available in: DO-35 package APPLICATIONS / BENEFITS * * * (axial-leaded) 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 Low reverse leakage characteristics. Low-profile ceramic surface mount package (see package illustration). ESD sensitive to Class 1. DO-213AA package (surface mount) 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 MAXIMUM RATINGS @ 25 C unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction-to-Solder Pad Average Rectified Output Current: (1) 1N5711UB (2) 1N5712UB Symbol TJ and TSTG R JSP Value -65 to +150 100 Unit C C/W IO 33 75 260 mA Solder Temperature @ 10 s NOTES: 1. At T EC and T SP = +140 C, derate I O to 0 at +150 C. 2. At T EC and T SP = +130 C, derate I O to 0 at +150 C. o C MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 1 of 7 1N5711UB and 1N5712UB (CC, CA, & D) MECHANICAL and PACKAGING * * * * * * CASE: Ceramic. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer's ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: Approximately 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 UB CA Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial grade Polarity CA = Common Anode CC = Common Cathode D = Doubler Blank = Unidirectional Surface Mount package JEDEC type number (see Electrical Characteristics table) Common Anode (CA) Unidirectional (blank) Doubler (D) SYMBOLS & DEFINITIONS Definition Symbol C f IR IO t rr V (BR) VF VR V RWM Common Cathode (CA) Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R. Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Breakdown Voltage: A voltage in the breakdown region. Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 2 of 7 1N5711UB and 1N5712UB (CC, CA, & D) ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted TYPE NUMBER 1N5711UB 1N5712UB MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE WORKING PEAK REVERSE VOLTAGE V (BR) @ 10 A Volts 70 20 V F @ 1 mA Volts 0.41 0.41 VF @ IF V @ mA 1.0 @ 15 1.0 @ 35 V RWM V (pk) 50 16 MAXIMUM REVERSE LEAKAGE CURRENT nA 200 150 IR @ VR Volts 50 16 MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz CT pF 2.0 2.0 NOTE: 1. Effective minority carrier lifetime () is 100 pico seconds. T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 3 of 7 1N5711UB and 1N5712UB (CC, CA, & D) IF - Forward Current (mA) GRAPHS V F - Forward Voltage (V) IR - Reverse Current (nA) FIGURE 1 I-V Curve showing typical Forward Voltage Variation Temperature for the 1N5712 Schottky Diodes V R - Reverse Voltage (V) (PULSED) FIGURE 2 1N5712 Typical variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 4 of 7 1N5711UB and 1N5712UB (CC, CA, & D) IF - Forward Current (mA) GRAPHS V F - Forward Voltage (V) IR - Reverse Current (nA) FIGURE 3 I - V curve showing typical Forward Voltage Variation With Temperature Schottky Diode 1N5711 V R - Reverse Voltage (V) (PULSED) FIGURE 4 1N5711 Typical Variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 5 of 7 1N5711UB and 1N5712UB (CC, CA, & D) RD - Dynamic Resistance (Ohms) GRAPHS I F - Forward Current (mA) (PULSED) FIGURE 5 Typical Dynamic Resistance (R D ) vs Forward Current (I F ) T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 6 of 7 1N5711UB and 1N5712UB (CC, CA, & D) PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 Dimensions millimeters Max Min Max 0.056 1.17 1.42 0.128 2.92 3.25 0.108 2.16 2.74 0.128 3.25 0.108 2.74 0.038 0.56 0.97 0.035 0.43 0.89 inch Min 0.046 0.115 0.085 0.022 0.017 Note Symbol LS1 LS2 LW r r1 r2 inch Min .035 .071 .016 - Dimensions millimeters Max Min Max .039 0.89 0.99 .079 1.80 2.01 .024 0.41 0.61 .008 0.20 .012 0.31 .022 .056 Note NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Ceramic package only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0040-2, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 7 of 7