2N 3707 through 2N 3711 _ | 2N 4058 through 2N 4062 | NPN. PNP SILICON AF SMALL SIGNAL TRANSISTORS THR 2N3707 THROUGH 2N3711 (NPN) AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CASE TO=92B CIRCUITS. ECB (NPN) (PNP) : ABSOLUTE MAXIMUM RATINGS for pncdences, vottage and current valueserenegave. 2N3707 thrut 2N3711 2N4058 thru! 2N4062 Collector-Base Voltage VcBo 30V 30V | Collector-Hmitter Voltage VCrO 30V 50V Emitter-Base Voltage VEBO 6V 6V Collector Current Ie 200mA LOOmA ** | Total Power Dissipation (Ta<25C) Prot 360mW Operating Junction & Storage Temperature Ts Tstg '** 30mA in JEDEC registration. derate 2.88mW/C above 25C -55 to 150C ELECTRICAL CHARACTERISTICS (Ta=259C unless otherwise noted) NPN PNP Te ernment PARAMETER SYMBOL | wow max | MIN max (CNIT| ~ TEST CONDITIONS Collector-Base Breakdown Voltage BYcBo 30 30 v Iq=0.0lmA Inf=0 Collector-Emitter Breakdown Voltage} LVcRo 30 30 v Ic=lmA Ip=0(Pulsed) | | Collector Cutoff Current Icpo 100 100] nA Vop=20V Ig=0 Emitter Cutoff Current TEBO 100 100} nA Vep=6V Ic=0 Collector-Emitter Saturation Von(sat) 1 0.7| V To=LOmA Voltage Tp=0.5mA Base-Emitter Voltage VBE 0.5 1/05 1,7 Ic=lma Vor=5v) Noise Figure * , NF 5] dB] IRqs0.ImA Vog=5v Rq=5Ka. f=30Hz~15Kie 5 aB Ic=0.lmA VoR=5V Rq=lOKs f=30H2-15 * For 2N3707 and 2N4058 only. BAM cen cette 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX <3510 KWUN TONG P. 0, BOX69427 CABLE ADDRESS MICROTRON. | TELEPHONE:- 3-430181-G S-893363;S-e82023 ce FAX: 3~410321 \ . : MICRO ELECTRONICS LID. - - ~ Continued - - - D.C. AND SMALL SIGNAL CURRENT GAIN (HFE, hfe) AT Vcn=5V Ta=25C NPN 2N3707 2N3708 2N3709 2N3710 2N3711 PNP 2N4058 2N4059 2N4060 2N4061 2N4062 PARAM ARAMETER MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX Hyg at Ip=0.1mA 100 400 Erg at Iq=lmA 45 660 45. 165 90 330 180 660 hre at Ig=0.1mA f=1kHz 100 550 fips at Trina 45 800 45 250 90 450 180 800 TYPICAL CHARACTERISTICS AT Ta=250C Ptot vs Ta HFE (NORMALIZED) vs IC 800 2.0 VoE=5 Pulse Test 1.6 600 a f Prot 1.2 (mW) & 0.8 fx 200 a BE MN 0.6 Ny | ~ 0 IN 0 0 50 100 150 200 0.1 1 10 100 Ta (9C) Ic (ma) fpr vs Ic VBE & VCE(sat) vs 1.6 1.2 VOLT 0.8 OW4 0.1 10 100 O.1 1 10 100 I (mA) tc (ma) 2.78.4300B.0430B