Rev.3.00 Mar 22, 2005 page 1 of 4
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0564-0300
(Previous: ADE-208-180B)
Rev.3.00
Mar 23, 2005
Features
Low capacitance. (C = 3.0 pF max)
Short reverse recovery time. (trr = 3.5 ns max)
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Package Name
Package Code
(Previous Code)
1SS119 Light Blue MHD GRZZ0002ZC-A
(MHD)
Pin Arrangement
12
Cathode band
1. Cathode
2. Anode
1SS119
Rev.3.00 Mar 23, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 35 V
Reverse voltage VR 30 V
Average rectified current IO 150 mA
Peak forward current IFM 450 mA
Non-Repetitive peak forward surge current IFSM * 1 A
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg 65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF0.8 V IF = 10 mA
Reverse current IR0.1 µA VR = 30 V
Capacitance C 3.0 pF VR = 1 V, f = 1 MHz
Reverse recovery time trr * 3.5 ns IF = 10 mA, VR = 6 V, RL = 50
Note: Reverse recovery time test circuit
0.1 µF
DC
Supply
Pulse
Generator
Ro = 50 Rin = 50
Sampling
Oscilloscope
3 k
Trigger
1SS119
Rev.3.00 Mar 23, 2005 page 3 of 4
Main Characteristic
0 0.2 0.80.6 1.00.4 1.2
Ta = -25°C
Ta = 25
°
C
Ta = 125°C
Ta = 75°C
010 304020 50
Ta = 75°C
Ta = 125°C
Ta = 25°C
1.0 10
10
1.0
100
f = 1MHz
10–4
10–3
10–2
10–1
0.1
10–5
10–6
10–4
10–7
10–8
10–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage VR (V)
Reverse current IR (A)
Fig.1 Forward current vs. Forward voltage
Forward voltage VF (V)
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage VR (V)
Capacitance C (pF)
1SS119
Rev.3.00 Mar 23, 2005 page 4 of 4
Package Dimensions
LEL
Min Nom Max
φb-0.4
φD-2.0
E--2.4
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
0.084g
MASS[Typ.]
MHD / MHDVGRZZ0002ZC-A
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