NTR4003N, NVR4003N Small Signal MOSFET 30 V, 0.56 A, Single N-Channel, SOT-23 Features * Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit * * * * * * Design Low Gate Charge for Fast Switching ESD Protected Gate SOT-23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 1.0 W @ 4.0 V 30 V 0.56 A 1.5 W @ 2.5 V N-Channel Applications 3 * Notebooks: Level Shifters Logic Switches Low Side Load Switches Portable Applications * 1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 0.5 A Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25C TA = 85C Steady State Continuous Drain Current (Note 1) t < 10 s TA = 25C PD 0.69 ID 0.56 W A 0.40 t<5s PD 0.83 W tp = 10 ms IDM 1.7 A TJ, Tstg -55 to 150 C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Pulsed Drain Current Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 180 C/W Junction-to-Ambient - t < 10 s (Note 1) RqJA 150 Junction-to-Ambient - Steady State (Note 2) RqJA 300 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2012 June, 2012 - Rev. 3 MARKING DIAGRAM/ PIN ASSIGNMENT 3 3 Drain 0.37 TA = 85C Power Dissipation (Note 1) 2 1 1 2 SOT-23 CASE 318 STYLE 21 TR8 M G TR8 M G G 1 Gate 2 Source = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTR4003NT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NTR4003NT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel NVR4003NT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTR4003N/D NTR4003N, NVR4003N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Units OFF CHARACTERISTICS V 40 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V TJ = 25C Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 10 V VGS(TH) VGS = VDS, ID = 250 mA mV/C 1.0 mA 1.0 mA 1.4 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS 0.8 3.4 mV/C VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.0 VDS = 3.0 V, ID = 10 mA 0.33 VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 19.7 W S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 21 pF 8.1 1.15 VGS = 5.0 V, VDS = 24 V, ID = 0.1 A 0.15 Gate-to-Source Gate Charge QGS Gate-to-Drain Charge QGD 0.23 td(on) 16.7 nC 0.32 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W tf 47.9 ns 65.1 64.2 SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25C 0.65 TJ = 125C 0.45 VGS = 0 V, dIS/dt = 8A/ms, IS = 10 mA 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 14 0.7 V ns NTR4003N, NVR4003N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.6 1.6 VGS = 10 V to 5 V 0.8 4V 0.4 3.5 V 2.5 V 0 1 0 0.4 3 1 2 4 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 6 4 2 2.8 3.2 3.6 VGS, GATE-TO-SOURCE VOLTAGE (V) 4 1 TJ = 125C 0.6 TJ = 25C 0.4 TJ = -55C 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) Figure 4. On-Resistance vs. Drain Current and Temperature 1000 1.80 VGS = 0 V IDSS, LEAKAGE (nA) ID = 0.3 A VGS = 4.5 V 1.40 1.20 1.00 TJ = 150C 100 TJ = 125C 0.80 0.60 -25 5 VGS = 10 V 0.8 Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) (NORMALIZED) TJ = 125C 0 ID = 0.2 A 1.60 TJ = 25C 0.8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 10 0 2.4 TJ = -55C 1.2 0 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4.5 V 1.2 VDS 10 V -50 0 25 50 75 100 125 150 10 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTR4003N, NVR4003N TJ = 25C VGS = 0 V 40 30 Ciss 20 Coss 10 0 Crss 0 4 8 12 16 20 5 TJ = 25C ID = 0.1 A 4 3 2 1 0 0 DRAIN-TO-SOURCE VOLTAGE (V) 0.4 Figure 8. Gate-to-Source & Drain-to-Source Voltage vs. Total Charge 1 VGS = 0 V 0.1 0.01 0.8 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 50 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) TJ = 150C TJ = 25C 0.001 0.4 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 0.8 1.2 NTR4003N, NVR4003N PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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