RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier (R) Major Ratings and Characteristics IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 DO-214BA (GF1) Features Mechanical Data * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020C * Solder Dip 260 C, 40 seconds Case: DO-214BA, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating Typical Applications For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and Telecommunication Maximum Ratings (TA = 25 C unless otherwise noted) Parameter Symbol Device marking code Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M RA RB RD RG RJ RK RM 50 100 200 400 600 800 1000 Unit V VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 120 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Max. full load reverse current, full cycle average TA = 55 C IR(AV) 50 A Operating junction and storage temperature range TJ,TSTG - 65 to + 175 C Document Number 88697 10-Aug-05 www.vishay.com 1 RGF1A thru RGF1M Vishay General Semiconductor Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Test condition Symbol at 1.0 A Maximum instantaneous forward voltage RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit VF 1.3 V TA = 25 C TA = 125 C IR 5.0 100 A Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance at 4.0 V, 1 MHz CJ Maximum DC reverse current at rated DC blocking voltage 150 250 500 ns 8.5 pF Thermal Characteristics (TA = 25 C unless otherwise noted) Parameter Typical thermal Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RJA RJL resistance(1) RGF1K RGF1M 80 28 Unit C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas Ratings and Characteristics Curves 30 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 1 0.5 60 Hz Resistive or Inductive Load 0 100 110 120 130 140 150 160 Lead Temperature (C) Figure 1. Forward Current Derating Curve www.vishay.com 2 Peak Forward Surge Current (A) Average Forward Rectified Current (A) (TA = 25 C unless otherwise specified) 175 TJ = TJ max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 1 100 10 Number of Cycles at 60 Hz Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Document Number 88697 10-Aug-05 RGF1A thru RGF1M Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 TJ = 25 C Pulse Width = 300 s 1% Duty Cycle 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25 C f = 1.0 MHz Vsig = 50mVp-p 10 1 1.6 Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 10 TJ = 125 C 1 TJ = 100 C 0.1 TJ = 25 C 0.01 0 20 40 60 80 100 10 1 Instantaneous Forward Voltage (V) 100 Mounted on 0.2 x 02." (5.0 x 7mm) Copper Pad Areas 10 1 0.1 0.01 0.1 Percent of Rated Peak Reverse Voltage (%) 1 100 10 t, Pulse Duration (sec.) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 MAX. (1.93 MAX.) 0.066 MIN. (1.68 MIN.) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 MIN. (1.52 MIN.) 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number 88697 10-Aug-05 0.006 (0.152) TYP. 0.220 (5.58) REF 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1