DATA SH EET
Product specification
Supersedes data of 1997 Mar 04 1999 Apr 12
DISCRETE SEMICONDUCTORS
BD135; BD137; BD139
NPN power transistors
b
ook, halfpage
M3D100
1999 Apr 12 2
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
PINNING
PIN DESCRIPTION
1 emitter
2 collector, connected to metal part of
mounting surface
3 base
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
handbook, halfpage
MAM254
123 Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BD135 45 V
BD137 60 V
BD139 100 V
VCEO collector-emitter voltage open base
BD135 45 V
BD137 60 V
BD139 80 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 1.5 A
ICM peak collector current 2A
I
BM peak base current 1A
P
tot total power dissipation Tmb 70 °C8W
T
stg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 12 3
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
THERMAL CHARACTERISTICS
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
Rth j-mb thermal resistance from junction to mounting base 10 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −−100 nA
IE= 0; VCB =30V; T
j= 125 °C−−10 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain VCE = 2 V; (see Fig.2)
IC= 5 mA 40 −−
I
C
= 150 mA 63 250
IC= 500 mA 25 −−
DC current gain IC= 150 mA; VCE =2V;
(see Fig.2)
BD135-10; BD137-10; BD139-10 63 160
BD135-16; BD137-16; BD139-16 100 250
VCEsat collector-emitter saturation voltage IC= 500 mA; IB=50mA −−0.5 V
VBE base-emitter voltage IC= 500 mA; VCE =2V −−1V
f
Ttransition frequency IC= 50 mA; VCE =5V;
f = 100 MHz 190 MHz
DC current gain ratio of the
complementary pairs IC= 150 mA; VCE=2V 1.3 1.6
hFE1
hFE2
-----------
1999 Apr 12 4
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH729
101
hFE
1IC (mA)
10 103
102
VCE = 2 V
1999 Apr 12 5
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
PACKAGE OUTLINE
UNIT bpcDEe
1
LQ w
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.88
0.65
2.7
2.3 0.60
0.45 11.1
10.5 7.8
7.2 2.29
e
4.58 0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3 1.5
0.9
L1(1)
max
2.54
SOT32 TO-126 97-03-04
0 2.5 5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
D
P1
P
E
e1
A
L
Q
c
bp
123
L
1
wM
e
1999 Apr 12 6
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 12 7
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 12 Document order number: 9397 750 05576